GSDS50020 Transistor Datasheet. Parameters and Characteristics.

Type Designator: GSDS50020

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 200

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 50

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of GSDS50020 transistor: TO3

GSDS50020 Equivalent Transistors - Cross-Reference Search

GSDS50020 PDF document for downloads:

PDF unavailable!

See also transistors datasheet: GSDR10020I , GSDR10025 , GSDR10025I , GSDR15020 , GSDR15020I , GSDR15025 , GSDR15025I , GSDS50018 , 100DA025D , GSDU7530 , GSDU7535 , GSDU7540 , GS-H9012 , GS-H9012D , GS-H9012E , GS-H9012F , GS-H9032 .

Keywords