GS-H9032E Transistor Datasheet. Parameters and Characteristics.

Type Designator: GS-H9032E

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 78

Noise Figure, dB: -

Package of GS-H9032E transistor: TO92

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See also transistors datasheet: GSDU7535 , GSDU7540 , GS-H9012 , GS-H9012D , GS-H9012E , GS-H9012F , GS-H9032 , GS-H9032D , AC188 , GS-H9033 , GS-H9033D , GS-H9033E , GSRU10030 , GSRU10035 , GSRU10040 , GSRU15030 , GSRU15030A .

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