GT109D Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT109D

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.03

Maximum collector-base voltage |Ucb|, V: 10

Maximum collector-emitter voltage |Uce|, V: 6

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.02

Maximum junction temperature (Tj), °C: 80

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 40

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of GT109D transistor:

GT109D Equivalent Transistors - Cross-Reference Search

GT109D PDF document for downloads:

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See also transistors datasheet: GT100/9 , GT1079 , GT108A , GT108B , GT108G , GT108V , GT109A , GT109B , 2N5401 , GT109E , GT109G , GT109I , GT109J , GT109V , GT115A , GT115B , GT115D .

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