GT125E Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT125E

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 20

Maximum collector current |Ic max|, A: 0.3

Maximum junction temperature (Tj), °C: 90

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 45

Noise Figure, dB: -

Package of GT125E transistor:

GT125E Equivalent Transistors - Cross-Reference Search

GT125E PDF document for downloads:

5.1. gt125a-b-v-g-d-e-zh-i-k-l.pdf Size:414K _russia

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See also transistors datasheet: GT122V , GT124A , GT124B , GT124G , GT124V , GT125A , GT125B , GT125D , OC44 , GT125G , GT125I , GT125J , GT125K , GT125L , GT125V , GT150/10 , GT150/3 .

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