2N3815 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3815

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 300

Noise Figure, dB: -

Package of 2N3815 transistor: TO89-3

2N3815 Equivalent Transistors - Cross-Reference Search

2N3815 PDF document for downloads:

5.1. 2n3819-p.pdf Size:65K _philips

5.2. 2n3819.pdf Size:29K _fairchild_semi

2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)GSS Gate-S

5.3. 2n3819_2.pdf Size:53K _vishay

2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise: 3 dB @ 400 MHz D High Quality of Amplification D Sample-and-Hold D Very Low Distortion D High-Speed Switching Capability D Very Low Capacitance Switches D High ac/dc Switch Off-Isolation D High Low-Level Signal Amplification D High Gain: AV = 60 @ 100 mA DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good Its TO-226AA (TO-92) package is compatible with various performance at mid-to-high frequencies. It features low noise tape-and-reel options for automated assembly (see and leakage and guarantees high gain at 100 MHz. Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N441

5.4. 2n3819.pdf Size:170K _onsemi

2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS http://onsemi.com Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc 3 DRAIN Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc 2 Drain Current ID 100 mAdc GATE Forward Gate Current IG(f) 10 mAdc Total Device Dissipation PD 1 SOURCE @ TA = 25°C 350 mW Derate above 25°C 2.8 mW/°C Storage Channel Temperature Range Tstg –65 to +150 °C 1 2 3 TO–92 CASE 29 STYLE 22 MARKING DIAGRAM 2N 3819 YWW 2N3819 = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping 2N3819 TO–92 5000 Units/Box © Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2002 – Rev. 0 2N3819/D 2N3819 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage V(BR)GSS 25 – – Vdc (IG = 1.0 µAdc, VDS = 0) Gate–Source VGS 0.5 – 7.5 Vdc (VDS = 15 Vdc, ID = 2

5.5. 2n3810_2n3811.pdf Size:61K _microsemi

TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3811 JAN 2N3810L 2N3811L JANTX 2N3810U 2N3811U JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 50 mAdc IC One Both Section 1 Sections2 Total Power Dissipation @ T = +250C 0.5 0.6 W A PT TO-78* 0 Operating & Storage Junction Temperature Range -65 to +200 C TJ Tstg , 1) Derate linearly 2.86 mW/0C for T > +250C A 2) Derate linearly 3.43 mW/0C for T > +250C A *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage 60 Vdc IC = 10 µAdc V(BR)CBO Collector-Emitter Breakdown Current 60 Vdc IC = 10 mAdc V (BR) CEO Emitter-Base Breakdown Voltage 5.0 V

See also transistors datasheet: 2N3810DCSM , 2N3811 , 2N3811A , 2N3811ADCSM , 2N3811DCSM , 2N3812 , 2N3813 , 2N3814 , BC109C , 2N3816 , 2N3816A , 2N3817 , 2N3817A , 2N3818 , 2N382 , 2N3825 , 2N3826 .

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