2N3833 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3833

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 1

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 1000

Collector capacitance (Cc), pF: 1.7

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N3833 transistor: TO50-2

2N3833 Equivalent Transistors - Cross-Reference Search

2N3833 PDF document for downloads:

5.1. 2n2857_2n3839.pdf Size:62K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.2. 2n3831.pdf Size:11K _semelab

2N3831 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 1.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 40 V IC(CONT) 1.2 A hFE @ 1/0.5 (VCE / IC) 35 - ft 200M Hz PD 1 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. In

5.3. 2n3838_2n4854.pdf Size:135K _microsemi

TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level JAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 Vdc VCEO Collector-Base Voltage 60 60 Vdc VCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector Current 600 600 mAdc IC One Total One Total Trans Devic Trans Device e 0.25(2) 0.35 0.30(3) 0.60 Total Power Dissipation @ TA = +250C PT W 1.0(5) 2.0 0.7(4) 1.4 @ TC = + 250C(1) W 6 Pin Surface Mount* 0 Operating & Storage Junction Temp. Range 200 C TJ 2N4854U 0 Operating & Storage Junction Temp. Range -55 to +200 C Tstg Lead to Case Voltage Vdc ±120 1) TC rating do not apply to Surface Mount devices (2N4854U) 2) For TA > +250C Derate linearly 1.43 mW/0C (one transistor) 2.00 mW/0C (both transistors) 3) For TA > +250C Derate linearly 1.71 mW/0C (one trans

See also transistors datasheet: 2N3827 , 2N3828 , 2N3829 , 2N383 , 2N3830 , 2N3830L , 2N3831 , 2N3832 , 2N60B , 2N3834 , 2N3835 , 2N3836 , 2N3837 , 2N3838 , 2N3839 , 2N384 , 2N3840 .

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