IDB553 Transistor Datasheet. Parameters and Characteristics.

Type Designator: IDB553

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 7

Maximum junction temperature (Tj), °C: 140

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of IDB553 transistor: TO220

IDB553 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: IDB1016 , IDB1017 , IDB1019 , IDB1021 , IDB1023 , IDB1024 , IDB434 , IDB435 , 2SC1815 , IDB595 , IDB596 , IDB674 , IDB676 , IDB677 , IDC2073 , IDC2238 , IDC2238A .

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