IR900 Transistor Datasheet. Parameters and Characteristics.

Type Designator: IR900

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 1000

Noise Figure, dB: -

Package of IR900 transistor: TO3

IR900 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: IR4050 , IR4055 , IR4059 , IR4502 , IR6001 , IR645 , IR646 , IR647 , MJE13003 , IR901 , IT121 , IT121/71 , IT121TO71 , IT122 , IT122/71 , IT122TO71 , IT124 .

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