KC507
Transistor Datasheet. Parameters and Characteristics. Type Designator: KC507
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 45
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 175
Collector capacitance (Cc), pF: 4.5
Forward current transfer ratio (hFE), min: 125
Noise Figure, dB: - Package of KC507
transistor: TO18
KC507
Equivalent Transistors - Cross-Reference Search KC507
PDF doc:
1.1. gc520-k_gc521-k_gc522-k_bc413b-c_kc147_kc148_kc149_kc237a-b-v_kc238a-b-c_kc239f-b-c_kc507_kc508_kc509_kc635_kc637_kc639.pdf  Size:148K _tesla See also transistors datasheet: KC307B
, KC307C
, KC308A
, KC308B
, KC308C
, KC309B
, KC309C
, KC309F
, BC547C
, KC508
, KC509
, KC510
, KC636
, KC638
, KC640
, KC809
, KC810
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Datasheet | KC507
Datenblatt | KC507
RoHS | KC507
Distributor | | KC507
Application Notes | KC507
Component | KC507
Circuit | KC507
Schematic | | KC507
Equivalent | KC507
Cross Reference | KC507
Data Sheet | KC507
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