KC638
Transistor Datasheet. Parameters and Characteristics. Type Designator: KC638
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of KC638
transistor: TO92
KC638
Equivalent Transistors - Cross-Reference Search KC638
PDF document for downloads:
1.1. bc157vi-a_bc158vi-a-b_bc159a-b_bc177v-vi-a-b_bc178v-vi-a-b_bc179a-b_kc307a-b-v_kc308a-b-c_kc309f-b-c_kc636_kc638_kc640_kf423_kf470_kf517.pdf  Size:144K _tesla See also transistors datasheet: KC309B
, KC309C
, KC309F
, KC507
, KC508
, KC509
, KC510
, KC636
, 2N3055
, KC640
, KC809
, KC810
, KC811
, KCY36
, KCY38
, KCZ58
, KCZ59
. Keywords| KC638
Datasheet | KC638
Datenblatt | KC638
RoHS | KC638
Distributor | | KC638
Application Notes | KC638
Component | KC638
Circuit | KC638
Schematic | | KC638
Equivalent | KC638
Cross Reference | KC638
Data Sheet | KC638
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