2N3868-SM Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3868-SM

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N3868-SM transistor: TO252

2N3868-SM Equivalent Transistors - Cross-Reference Search

2N3868-SM PDF document for downloads:

4.1. 2n3868.pdf Size:56K _microsemi

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3868 APPLICATIONS: • High-Speed Switching • Medium-Current Switching • High-Frequency Amplifiers FEATURES: Silicon PNP Power • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 60 Vdc (Min) Transistors • DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc • Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc • High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are util

5.1. 2n3866_2n4427.pdf Size:45K _philips

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages with the • The transistors are intended for use in output, driver or collector connected to the case. The devices are primarily pre-driver stages in VHF and UHF equipment. intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. PINNING - TO-39/1 PIN DESCRIPTION 1 emitter 1 2 base handbook, halfpage 2 3 collector MBB199 3 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCER collector-emitter voltage RBE =10? 2N3866 - 55 V 2N4427 - 40 V VCEO collector-emitter voltage open base 2N3866 - 30 V 2N4427 - 20 V V

5.2. 2n3866_series.pdf Size:522K _central

2N3866 2N3866A www.centralsemi.com NPN SILICON DESCRIPTION: HIGH FREQUENCY TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 55 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 3.5 V Continuous Collector Current IC 0.4 A Continuous Base Current IB 2.0 A Power Dissipation (TC=25°C) PD 5.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ?JC 35 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO VCE=28V 20 µA ICEV VCE=55V, VBE(OFF)=1.5V 0.1 mA ICEV VCE=30V, VBE(OFF)=1.5V, TC=200°C 5.0 mA IEBO VEB=3.5V 0.1 mA BVCER IC=5.0mA, RBE=10? 55 V BVCBO IC=500µA 55 V BVCEO IC=5.0mA 30 V

5.3. 2n3867.pdf Size:56K _microsemi

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3867 APPLICATIONS: • High-Speed Switching • Medium-Current Switching • High-Frequency Amplifiers FEATURES: Silicon PNP Power • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc (Min) Transistors • DC Current Gain: hFE = 40-200 @ IC = 1.5 Adc • Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc • High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are util

5.4. 2n3866.pdf Size:331K _microsemi

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 1. Emitter • 800 MHz Current-Gain Bandwidth Product 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit V Collector-Emitter 30 Vdc CEO VCBO Collector-Base Voltage 55 Vdc V Emitter-Base Voltage 3.5 Vdc EBO I Collector Current 400 mA C Thermal Data P Total Device Dissipation 5.0 Watts D Derate above 25?C 28.6 mW/ ?C MSC1067.PDF 3-10-99 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (

See also transistors datasheet: 2N3864 , 2N3865 , 2N3866 , 2N3866A , 2N3866AUB , 2N3867 , 2N3867-SM , 2N3868 , 2N60C , 2N3869 , 2N387 , 2N3876 , 2N3877 , 2N3877A , 2N3878 , 2N3879 , 2N3879SM .

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