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KSA1013-Y Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSA1013-Y

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.9

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF: 35

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of KSA1013-Y transistor: TO92

KSA1013-Y Equivalent Transistors - Cross-Reference Search

KSA1013-Y PDF document for downloads:

3.1. ksa1013.pdf Size:55K _fairchild_semi

KSA1013 Color TV Audio Output Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1 A IB Base Current -0.5 A PC Collector Power Dissipation 900 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -150V, IE=0 -1 µA IEBO Emitter Cut-off Current VEB= -6mA, IC=0 -1 µA BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -160 V hFE DC Current Gain VCE= -5V, IC= -200mA 60 320 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -1.5 V VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -5mA -0.45 -0.75 V fT Current Gain

3.2. ksa1013.pdf Size:86K _samsung

KSA1013 PNP EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT TO-92L COLOR TV VERTICAL DEFLECTION OUTPUT ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Base Current IB -0.5 A Collector Dissipation PC 900 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector Cut-off Current ICBO VCB= -150V, IE=0 -1 Emitter Cut-off Current IEBO VEB= -6mA, IC=0 -1 Collector-Emitter Breakdown Voltage BVCEO IC= -10mA, IB=0 -160 V DC Current Gain hFE VCE= -5V, IC= -200mA 60 320 V Collector-Emitter Saturation Voltage VCE (sat) IC= -500mA, IB= -50mA -1.5 MHz Base-Emitter On Voltage VBE (on) VCE= -5V, IC= -5mA -0.45 -0.75 pF Current Gain Bandwidth Product fT VCE= -5V, IC= -200mA 15 50 3

4.1. ksa1015.pdf Size:42K _fairchild_semi

KSA1015 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage : VCBO= -50V • Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA IB Base Current -50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 °C TST9 Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -50V, IE=0 -0.1 µA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA hFE1 DC Current Gain VCE= -6V, IC= -2mA 70 400 hFE2 VC

4.2. ksa1010.pdf Size:50K _fairchild_semi

KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 7 A ICP *Collector Current (Pulse) - 15 A IB Base Current - 3.5 A PC Collector Dissipation (TC=25°C) 40 W Collector Dissipation (Ta=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW?300µs, Duty Cycle?10% ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSA1010 Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - 0.5A, L = 1mH - 100 V VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - IB2 = - 0.5A - 100 V V

See also transistors datasheet: KS6113 , KSA1010 , KSA1010-O , KSA1010-R , KSA1010-Y , KSA1013 , KSA1013-O , KSA1013-R , 2N3866 , KSA1142 , KSA1142-O , KSA1142-Y , KSA1150 , KSA1150-G , KSA1150-O , KSA1150-R , KSA1150-Y .

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