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KSA1142-O Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSA1142-O

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 8

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 180

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 180

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of KSA1142-O transistor: TO126

KSA1142-O Equivalent Transistors - Cross-Reference Search

KSA1142-O PDF doc:

3.1. ksa1142.pdf Size:66K _fairchild_semi

KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 180 V VCEO Collector-Emitter Voltage - 180 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 100 mA PC Collector Dissipation (Ta=25°C) 1.2 W PC Collector Dissipation (TC=25°C) 8 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = - 180V, IE = 0 - 1 µA IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 - 1 µA hFE1 * DC Current Gain VCE = - 5V, IC = - 1mA 90 200 hFE2 VCE = - 5V, IC = - 10mA 100 200 320 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 50mA, IB = - 5mA - 0.16 - 0.5 V VBE(sat) * Base-Emitter Sat

5.1. ksa1182.pdf Size:58K _fairchild_semi

KSA1182 Low Frequency Power Amplifier • Complement to KSC2859 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -35V, IE=0 -0.1 µA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA hFE1 DC Current Gain VCE= -1V, IC= -100mA 70 240 hFE2 V CE= -6V, IC= -400mA 25 VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.1 -0.25 V VBE (on) Base-Emitter On Voltage VCE= -1V , IC= -100mA -0.8 -1.0 V fT Current Gain Bandwidth Product VCE= -6V, IC= -20mA 200 MHz

5.2. ksa1150.pdf Size:40K _fairchild_semi

KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -500 mA ICP * Collector Current (Pulse) -700 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW?350ms, Duty cycle?50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -20 V BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -25V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -3V, IC=0 -100 nA

5.3. ksa1175.pdf Size:41K _fairchild_semi

KSA1175 Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to KSC2785 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -60 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -60V, IE=0 -0.1 µA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA hFE DC Current Gain VCE= -6V, IC= -1mA 40 700 VCE (sat) Collector-Emitter Satu

5.4. ksa1156.pdf Size:65K _fairchild_semi

KSA1156 High Voltage Switching Low Power Switching Regulator DC-DC Converter • High Breakdown Voltage • Low Collector Saturation Voltage • High Speed Switching TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 400 V VCEO Collector-Emitter Voltage - 400 V VEBO Emitter-Base Voltage - 7 V IB Base Current - 0.25 A IC Collector Current (DC) - 0.5 A ICP Collector Current (Pulse) - 1 A PC Collector Dissipation (Ta=25°C) 1 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage IC = - 100mA, IB = - 10mA - 400 V L = - 20mH VCEX(sus) Collector-Emitter Sustaining Voltage IC = - 200mA, IB1 = - IB2 = - 20mA - 400 V VBE(off)= 5V, L = 1

5.5. ksa1174.pdf Size:46K _fairchild_semi

KSA1174 Audio Frequency Low Noise Amplifier • Complement to KSC2784 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -50 mA IB Base Current -10 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -120V, IE=0 -50 nA ICEO Collector Cut-off Current VCE= -100V, IB=0 -1 µA IEBO Emitter Cut-off Current VEB= -5V, IC= 0 -50 nA hFE1 DC Current Gain VCE= -6V, IC= -0.1mA 150 500 hFE2 VCE= -6V, IC= -1mA 200 500 800 VBE (on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.61 -0.65 V VCE (sat) Collector-Emitter Saturation Voltage IC= -1

5.6. ksa1182.pdf Size:476K _htsemi

KSA1182 TRANSISTOR (PNP) SOT-23 FEATURES Complement to KSC2859 1. BASE MAXIMUM RATINGS (TA=25? unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC=-100mA 70 240 DC current gain hFE(2) VCE=-6V, IC=-400mA 25 Collector-emitter saturation voltage VCE(sat) IC=

5.7. ksa1182.pdf Size:212K _lge

KSA1182 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Complement to KSC2859 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 150 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC=-100mA 70 240 DC current gain hFE(2) VCE=-6V, IC=-400mA 25

5.8. ksa1175.pdf Size:205K _lge

KSA1175 TO-92S Transistor (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Collector-Base Voltage : VCBO= -60V Complement to KSC2785 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -0.15 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.25 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-0.1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10?A, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A DC current gain hFE VCE=-6V, IC=-1mA 4

See also transistors datasheet: KSA1010-O , KSA1010-R , KSA1010-Y , KSA1013 , KSA1013-O , KSA1013-R , KSA1013-Y , KSA1142 , 2N60B , KSA1142-Y , KSA1150 , KSA1150-G , KSA1150-O , KSA1150-R , KSA1150-Y , KSA1156 , KSA1156-N .

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