KSA1220-O Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSA1220-O

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF: 26

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of KSA1220-O transistor: TO126

KSA1220-O Equivalent Transistors - Cross-Reference Search

KSA1220-O PDF document for downloads:

2.1. ksa1220-a.pdf Size:76K _fairchild_semi

KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier • Complement to KSC2690/KSC2690A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage : KSA1220 - 120 V : KSA1220A - 160 V VCEO Collector-Emitter Voltage : KSA1220 - 120 V : KSA1220A - 160 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 1.2 A ICP *Collector Current (Pulse) - 2.5 A IB Base Current - 0.3 A PC Collector Dissipation (Ta=25°C) 1.2 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW?10ms, Duty Cycle?50% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = - 120V, IE = 0 - 1 µA IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 - 1 µA hFE1 * DC Current Gain VCE = - 5V, I

2.2. ksa1220-1220a.pdf Size:186K _lge

KSA1220/1220A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Audio frequency power amplifier High frequency power amplifier Complement to KSC2690/KSC2690A MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) 2.500 7.400 2.900 1.100 7.800 1.500 Symbol Parameter Value Units 3.900 3.000 4.100 VCBO Collector-Base Voltage KSA1220 -120 V 3.200 10.600 0.000 KSA1220A -160 V 11.000 0.300 VCEO Collector-Emitter Voltage KSA1220 -120 V 2.100 2.300 KSA1220A -160 V 1.170 1.370 VEBO Emitter-Base Voltage -5 V 15.300 15.700 IC Collector Current (DC) -1.2 A ICP Collector Current ( PW ?10ms,Duty Cycle ?2 % ) -2.5 A 0.660 0.860 IB Base Current -0.3 A 0.450 0.600 2.290 TYP PC Collector Power Dissipation (Ta = 25 ?) 1.25 W 4.480 4.680 Collector Power Dissipation (Tc = 25 ?) 20 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARAC

5.1. ksa1298.pdf Size:44K _fairchild_semi

KSA1298 Low Frequency Power Amplifier 3 • Complement to KSC3265 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA IB Base Current -160 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C • Refer to KSA643 for graphs. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE= -1mA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -30V, IE=0 -100 nA IEBO Emitter Cut-off Current VBE= -5V, IC=0 -100 nA hFE1 DC Current Gain VCE= -1V, IC= -100mA 100 320 hFE2 VCE= -1V, IC= -800mA 40 VCE (sat) Collector-Emitter Satura

5.2. ksa1243.pdf Size:39K _fairchild_semi

KSA1243 Power Amplifier Applications • Complement to KSC3073 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 30 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage - 5 V IB Base Current - 0.6 A IC Collector Current - 3 A PC Collector Dissipation (Ta=25°C) 1 W PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 30 V BVEBO Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 - 5 V ICBO Collector Cut-off Current VCB = - 20V, IE = 0 - 1 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 1 µA hFE1 DC Current Gain VCE = - 2V, IC = - 0.5A 70 240 hFE2 VCE = - 2V, IC = - 2.5A 25 VCE(sa

5.3. ksa1244.pdf Size:39K _fairchild_semi

KSA1244 High Current Switching • Low Collector-Emitter Saturation Voltage • Complement to KSC3074 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Voltage - 5 V IB Base Current - 1 A IC Collector Current - 5 A PC Collector Dissipation (Ta=25°C) 1 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 50 V ICBO Collector Cut-off Current VCB = - 50V, IE = 0 -1 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 -1 µA hFE1 DC Current Gain VCE = - 1V, IC = - 1A 70 240 hFE2 VCE = - 1V, IC = - 3A 30 VCE(Sat) Collector-Emitter Saturation V

5.4. ksa1201.pdf Size:425K _fairchild_semi

July 2005 KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA IB Base Current -160 mA PC Collector Power Dissipation 500 mW PC* 1,000 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -120 V BVEBO Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 -5 V ICBO Col

5.5. ksa1281.pdf Size:163K _fairchild_semi

January 2009 KSA1281 Audio Power Amplifier • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -2 A PC Collector Dissipation (TC=25°C) 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics* Ta = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100, IE=0 -50 V BVCEO

5.6. ksa1203.pdf Size:427K _fairchild_semi

July 2005 KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A IB Base Current -0.3 A PC Collector Power Dissipation 500 mW PC* 1,000 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2 ? 0.8mm) Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -30 V BVEBO Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 -5 V ICBO Collector Cut-off Current

5.7. ksa1298.pdf Size:19K _samsung

KSA1298 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER STO-23 •Complement to KSC3265 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Base Current IB -160 mA Collector Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 • Refer to KSA643 for graphs. 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Condition Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC= -10mA, IB=0 -25 V Emitter-Base Breakdown Voltage BVEBO IE= -1mA, IC=0 -5 V VCB= -30V, IE=0 Collector Cut-off Current ICBO -100 nA VBE= -5V, IC=0 Emitter Cut-off Current IEBO -100 nA VCE= -1V, IC= -100mA DC Current Gain hFE1 100 320 VCE= -1V, IC= -800mA hFE2 40 IC= -500mA, IB= -20mA Collector Emitter Saturation Voltage VCE (sat) -0.4 V Base-Emitter On

See also transistors datasheet: KSA1201-Y , KSA1203-O , KSA1203-Y , KSA1220 , KSA1220A , KSA1220A-O , KSA1220A-R , KSA1220A-Y , 2N3904 , KSA1220-R , KSA1220-Y , KSA1241 , KSA1241-O , KSA1241-Y , KSA1242 , KSA1242-O , KSA1242-Y .

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