All Transistors Datasheet

 

2N3902 Transistor (IC) Datasheet. Cross Reference Search. 2N3902 Equivalent

Type Designator: 2N3902

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 700

Maximum collector-emitter voltage |Uce|, V: 325

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 3.5

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 2.8

Collector capacitance (Cc), pF: 150

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2N3902 transistor: TO3

2N3902 Transistor Equivalent Substitute - Cross-Reference Search

2N3902 PDF:

1.1. 2n3902.pdf Size:158K _bocasemi

2N3902
2N3902

Boca Semiconductor Corp. (BSC) http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com

1.2. 2n3902_2n5157.pdf Size:176K _aeroflex

2N3902
2N3902

NPN High Power Silicon Transistors 2N3902 & 2N5157 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage VCEO 400 500 Vdc Emitter - Base Voltage VEBO 5.0 6.0 Vdc Collector - Base Voltage VCBO 7.0 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total

5.1. 2n3905_2n3906.pdf Size:199K _motorola

2N3902
2N3902

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc C

5.2. 2n3903_2n3904.pdf Size:212K _motorola

2N3902
2N3902

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D General Purpose Transistors 2N3903 NPN Silicon * 2N3904 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc C

5.3. 2n3906_3.pdf Size:52K _philips

2N3902
2N3902

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter High-speed switch

5.4. 2n3904_3.pdf Size:51K _philips

2N3902
2N3902

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 15 Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter High-speed switch

5.5. 2n3906.pdf Size:61K _st

2N3902
2N3902

2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS 2N3904 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT S

5.6. 2n3904.pdf Size:60K _st

2N3902
2N3902

2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS 2N3906 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT S

5.7. 2n3904_mmbt3904_pzt3904.pdf Size:111K _fairchild_semi

2N3902
2N3902

2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V

5.8. 2n3903.pdf Size:578K _fairchild_semi

2N3902
2N3902

2N3903 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 60 V CBO VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuou

5.9. 2n3906.pdf Size:148K _fairchild_semi

2N3902
2N3902

October 2011 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier and switching applications at collector currents of 10?A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark:2A EBC Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-

5.10. 2n3906_mmbt3906_pzt3906.pdf Size:106K _fairchild_semi

2N3902
2N3902

2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage

5.11. 2n3904.pdf Size:169K _fairchild_semi

2N3902
2N3902

October 2011 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E C B TO-92 SOT-23 SOT-223 B Mark:1A EBC Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Param

5.12. 2n3905.pdf Size:62K _fairchild_semi

2N3902
2N3902

2N3905 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuou

5.13. 2n3903.pdf Size:86K _samsung

2N3902
2N3902

2N3903 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page : 1 (2N3903) 2N3903 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page : 2 (2N3903)

5.14. 2n3905_2n3906.pdf Size:67K _central

2N3902
2N3902

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.15. 2n3903_2n3904.pdf Size:66K _central

2N3902
2N3902

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.16. 2n3906(to-92).pdf Size:225K _mcc

2N3902
2N3902

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3906 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier

5.17. 2n3904(to-92).pdf Size:260K _mcc

2N3902
2N3902

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3904 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Amplifi

5.18. 2n3903_2n3904.pdf Size:177K _onsemi

2N3902
2N3902

2N3903, 2N3904 General Purpose Transistors NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation PD @ TA = 25C 625

5.19. 2n3906.pdf Size:173K _onsemi

2N3902
2N3902

2N3906 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR Pb-Free Packages are Available* 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit 1 EMITTER Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO-92 CASE 29 Total Device Dissipation @ TA =

5.20. 2n3906.pdf Size:186K _utc

2N3902
2N3902

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc(MAX)=625mW 1 * Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box 2N

5.21. 2n3904.pdf Size:214K _utc

2N3902
2N3902

UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3904L-T92-B 2N3904G-T92-B TO-92 E B C Tape Box 2N3904L-T92-K 2N3904G-

5.22. 2n3906.pdf Size:52K _auk

2N3902
2N3902

2N3906 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3904 Ordering Information Type NO. Marking Package Code 2N3906 2N3906 T0-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1

5.23. 2n3904.pdf Size:162K _auk

2N3902
2N3902

2N3904 NPN Silicon Transistor Descriptions PIN Connection • General small signal application C • Switching application Features B • Low collector saturation voltage • Collector output capacitance E • Complementary pair with 2N3906 TO-92 Ordering Information Type NO. Marking Package Code 2N3904 2N3904 TO-92 Absolute maximum ratings Ta=25°C Characteri

5.24. 2n3906.pdf Size:376K _secos

2N3902
2N3902

2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 ? Power Dissipation PCM: 625mW (Ta=25°C) A D ? Collector Current ICM: -200mA ? Collector – Base Voltage V(BR)CBO: -40V B CLASSIFICATION OF hFE E C F Product-Rank 2N3906-O 2N3906-Y Range 100~200 200~3

5.25. 2n3904.pdf Size:378K _secos

2N3902
2N3902

2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25°C) G H 1Emitter 1 1 1 Collector Current ICM: 200mA 2Base 2 2 2 Collector – Base Voltage V(BR)CBO: 60V 3Collector 3 3 3 J A D CLASSIFICATION OF hFE(1) Milli

5.26. 2n3905_06.pdf Size:354K _cdil

2N3902
2N3902

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3905 / 2N3906 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C B E General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter

5.27. 2n3903_04.pdf Size:355K _cdil

2N3902
2N3902

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3903 / 2N3904 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C B E General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter

5.28. 2n3906v.pdf Size:92K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3906V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=-30V, VEB=-3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.0

5.29. 2n3904v.pdf Size:92K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ : ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=30V, VEB=3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.05 +

5.30. 2n3906e.pdf Size:91K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=-30V, VEB=-3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H

5.31. 2n3906c.pdf Size:76K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.4V(Max

5.32. 2n3904e.pdf Size:91K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=30V, VEB=3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H 0.5

5.33. 2n3904c.pdf Size:73K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Max.)

5.34. 2n3906u.pdf Size:50K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=-30V, VEB=-3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+

5.35. 2n3906.pdf Size:51K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.4V(Max.

5.36. 2n3904s.pdf Size:410K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 @VCE=30V, VEB=3V. 1 G 1.90 H 0.95 Excellent DC Current Gain Linearity. J 0.13+0.10/-

5.37. 2n3906a.pdf Size:561K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. F 1.27 G 0.85 Low Collector

5.38. 2n3904.pdf Size:51K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Max.) @IC

5.39. 2n3904u.pdf Size:51K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=30V, VEB=3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+0.1/

5.40. 2n3906s.pdf Size:51K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 @VCE=-30V, VEB=-3V. 1 G 1.90 H 0.95 Excellent DC Current Gain Linearity. J 0.13+0.

5.41. 2n3904a.pdf Size:657K _kec

2N3902
2N3902

SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. F 1.27 G 0.85 Low Collector Output

5.42. 2n3906.pdf Size:307K _lge

2N3902
2N3902

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25? unless otherwise noted)

5.43. 2n3904.pdf Size:307K _lge

2N3902
2N3902

2N3904(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25? unless otherwise noted)

5.44. 2n3906.pdf Size:541K _wietron

2N3902
2N3902

2N3906 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temp

5.45. 2n3904.pdf Size:612K _wietron

2N3902
2N3902

2N3904 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 200 mAdc PD 625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperatur

5.46. h2n3904.pdf Size:50K _hsmc

2N3902
2N3902

Spec. No. : HE6218 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2005.01.14 MICROELECTRONICS CORP. Page No. : 1/5 H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.........................................................

5.47. h2n3906.pdf Size:51K _hsmc

2N3902
2N3902

Spec. No. : HE6240 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2005.01.14 MICROELECTRONICS CORP. Page No. : 1/5 H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N3906 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.........................................................

5.48. 2n3904_to92.pdf Size:398K _first_silicon

2N3902
2N3902

SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

5.49. 2n3906e.pdf Size:387K _first_silicon

2N3902
2N3902

SEMICONDUCTOR 2N3906E TECHNICAL DATA General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Shipping Device Marking 2 2N3906E 2A 3000/Tape & Reel 1 SC –89 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector–Emitter Voltage V – 40 Vdc CEO COLLECTOR Collector–Base Voltage V CBO – 4

5.50. 2n3906_to92.pdf Size:437K _first_silicon

2N3902
2N3902

SEMICONDUCTOR 2N3906 TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt

5.51. 2n3906u.pdf Size:603K _first_silicon

2N3902
2N3902

SEMICONDUCTOR 2N3906U TECHNICAL DATA General Purpose Transistors PNP Silicon ● FEATURES We declare that the material of product compliant with RoHS requirements and Halogen Free. ● DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping 2N3906U 2A 3000/Tape&Reel 1 2 SC-70 / SOT– 323 ● MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Limits Unit Collector–Emitte

5.52. 2n3904s.pdf Size:227K _first_silicon

2N3902
2N3902

SEMICONDUCTOR 2N3904S TECHNICAL DATA General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping 3 2N3904S 1AM 3000/Tape & Reel 2 1 MAXIMUM RATINGS SOT–23 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc 3 COLLECTOR Emitter–Base Vo

5.53. 2n3904u.pdf Size:201K _first_silicon

2N3902
2N3902

SEMICONDUCTOR 2N3904U TECHNICAL DATA General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping AM 2N3904U 3000/Tape & Reel 1 2 SC-70 / SOT– 323 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc 3 COLLECTOR Collector–Base Voltage VCBO 60 Vdc 1 Emi

5.54. 2n3906s.pdf Size:199K _first_silicon

2N3902
2N3902

SEMICONDUCTOR 2N3906S TECHNICAL DATA General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 2 2N3906S 2A 3000/Tape & Reel 1 SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector–Emitter Voltage V – 40 Vdc CEO COLLECTOR Collector–Base Voltage V CBO – 40

5.55. 2n3906.pdf Size:245K _shenzhen-tuofeng-semi

2N3902
2N3902

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

5.56. 2n3904.pdf Size:383K _shenzhen-tuofeng-semi

2N3902
2N3902

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 Lead-free: 2N3904L Halogen-free:2N3904G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Fre

See also transistors datasheet: 2N389-1 , 2N389A , 2N389A-1 , 2N38A , 2N39 , 2N3900 , 2N3900A , 2N3901 , S9013 , 2N3903 , 2N3904 , 2N3904CSM , 2N3904DCSM , 2N3905 , 2N3905CSM , 2N3906 , 2N3906CSM .

Search Terms:

 2N3902 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


2N3902
  2N3902
  2N3902
  2N3902
 
2N3902
  2N3902
  2N3902
  2N3902
 

social 

LIST

Last Update

BJT: TPR175 | TPV597 | TPV596A | TPV595A | TPV595 | TPV593 | TPV591 | TPV5051 | TPV394 | TPV385 | TSB772SCT | TSB772CK | TSB1590CX | TSB1424CX | TSB1424CY | TSB1424ACW | TSB1412CP | TSB1386CY | TSB1184CP | TSB1184ACP |

Enter a full or partial SMD code with a minimum of 2 letters or numbers