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2N3904
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2N3904
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100DA025D .. 2N1011
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2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
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2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3060
HEPS3061 .. HSE149
HSE150 .. IR1000
IR1001 .. K2110A
K2110B .. KRA223M
KRA223S .. KRC120M
KRC120S .. KRC881T
KRC882T .. KSB798
KSB810 .. KSC5022-Y
KSC5023 .. KSE171
KSE172 .. KT215D9
KT215E9 .. KT351B
KT352A .. KT657B-2
KT657V-2 .. KT8183B
KT8183B-1 .. KT920B
KT920G .. KTC3194
KTC3195 .. KTX511T
KTX512T .. MD1T3251
MD2001FX .. MJ15018
MJ15019 .. MJE13006
MJE13007 .. MJF6688
MJH10012 .. MMBT200A
MMBT2131 .. MMBTA70L
MMBTA70LT1 .. MP1555A
MP1556 .. MP8133
MP8134 .. MPS3906
MPS3906R .. MQ1613R
MQ1711 .. MT3S19
MT3S19R .. NA22FG
NA22FH .. NB021HZ
NB022E .. NB221EH
NB221EI .. NKT270
NKT271 .. NR431FR
NR431FS .. NTE2554
NTE2555 .. P2N2222A
P2N2369 .. PDTA123EE
PDTA123EM .. PMD19K100
PMD19K200 .. PTB20071
PTB20074 .. RCA9201
RCA9201A .. RN1911FE
RN1911FS .. RN2965FE
RN2965FS .. S790T
S791T .. SF016
SF018 .. SMBT2369
SMBT2369A .. SRC1210EF
SRC1210M .. STL128DN
STL72 .. T1447
T1472 .. TD13005
TD13005-SMD .. TIP34BF
TIP34C .. TIX813
TIX814 .. TN5857
TN5858 .. TRF453A
TRF455 .. UN2117R
UN2117S .. UPT523
UPT524 .. ZTX108L
ZTX108M .. ZTX602
ZTX603 .. ZXTPS720MC
 
2N3904 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N3904 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3904

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N3904 transistor: TO92

2N3904 Equivalent Transistors - Cross-Reference Search

2N3904 PDF doc:

1.1. 2n3903_2n3904.pdf Size:212K _motorola

2N3904
2N3904
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D General Purpose Transistors 2N3903 NPN Silicon * 2N3904 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS* Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W * Indicates Data in addition to JEDEC Requirements. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHAR

1.2. 2n3904_3.pdf Size:51K _philips

2N3904
2N3904
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 15 Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter High-speed switching. DESCRIPTION 1 handbook, halfpage 1 2 NPN switching transistor in a TO-92; SOT54 plastic 3 2 package. PNP complement: 2N3906. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) - 200 mA ICM peak collector current - 300 mA IBM peak base current - 100 mA Ptot total power

1.3. 2n3904.pdf Size:60K _st

2N3904
2N3904
2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS 2N3906 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 40 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 200 mA P Total Dissipation at T = 25 oC 625 mW tot C o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/5 February 2003 2N3904 THERMAL DATA o Rthj-amb Thermal Resistance Junction-Ambient Max 200 C/W o R Thermal Resistance Junction-Case

1.4. 2n3904.pdf Size:169K _fairchild_semi

2N3904
2N3904
October 2011 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E C B TO-92 SOT-23 SOT-223 B Mark:1A EBC Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta =

1.5. 2n3904_mmbt3904_pzt3904.pdf Size:111K _fairchild_semi

2N3904
2N3904
2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max

1.6. 2n3903_2n3904.pdf Size:66K _central

2N3904
2N3904
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n3904(to-92).pdf Size:260K _mcc

2N3904
2N3904
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3904 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier Moisure Sensitivity Level 1 Through Hole Package Marking:Type number TO-92 Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc (IC=1.0mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage 60 Vdc B (IC=10Adc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 6.0 Vdc (IE=10Adc, IC=0) IBL Base Cutoff Current 50 nAdc (VCE=30Vdc, VBE=3.0Vdc) ICEX Collector Cutoff Current 50 nAdc (VCE=30Vdc, VBE=3.0Vdc) ON CHARACTERISTICS C hFE DC Current Gain* (

1.8. 2n3903_2n3904.pdf Size:177K _onsemi

2N3904
2N3904
2N3903, 2N3904 General Purpose Transistors NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation PD @ TA = 25C 625 mW Derate above 25C 5.0 mW/C TO-92 CASE 29 Total Device Dissipation PD STYLE 1 @ TC = 25C 1.5 W Derate above 25C 12 mW/C 1 1 2 2 Operating and Storage Junction TJ, Tstg -55 to +150 C 3 3 Temperature Range STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL THERMAL CHARACTERISTICS (Note 1) AMMO PACK Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAMS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation ab

1.9. 2n3904.pdf Size:214K _utc

2N3904
2N3904
UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3904L-T92-B 2N3904G-T92-B TO-92 E B C Tape Box 2N3904L-T92-K 2N3904G-T92-K TO-92 E B C Bulk 2N3904L-T92-R 2N3904G-T92-R TO-92 E B C Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R201-027, D 2N3904 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 °С Operating and Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those va

1.10. 2n3904.pdf Size:162K _auk

2N3904
2N3904
2N3904 NPN Silicon Transistor Descriptions PIN Connection • General small signal application C • Switching application Features B • Low collector saturation voltage • Collector output capacitance E • Complementary pair with 2N3906 TO-92 Ordering Information Type NO. Marking Package Code 2N3904 2N3904 TO-92 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10?A, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - V Emitter-Base breakdown voltage BVEBO IE=10?A, IC=0 6 - - V Collector cut-off current ICEX VCE=30V, VEB=3V

1.11. 2n3904.pdf Size:378K _secos

2N3904
2N3904
2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25°C) G H 1Emitter 1 1 1 Collector Current ICM: 200mA 2Base 2 2 2 Collector – Base Voltage V(BR)CBO: 60V 3Collector 3 3 3 J A D CLASSIFICATION OF hFE(1) Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank 2N3904-O 2N3904-Y 2N3904-G B 4.30 4.70 K C 12.70 - Range 100~200 200~300 300~400 D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 3 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V A Collector Current -Continuous IC 0.2 Cpllector Power Dissipation PC 625 mW Junction, Storage Te

1.12. 2n3904.pdf Size:51K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. H 0.45 _ Low Collector Output Capacitance H J 14.00 + 0.50 K 0.55 MAX F F : Cob=4pF(Max.) @VCB=5V. L 2.30 M 0.45 MAX Complementary to 2N3906. N 1.00 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TO-92 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2002. 9. 12 Revision N

1.13. 2n3904v.pdf Size:92K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ : ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=30V, VEB=3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.05 + H 0.40 P P : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. _ J 0.12 + 0.05 _ K 0.2 + 0.05 Low Collector Output Capacitance P 5 : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906V. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VSM VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA Marking PC * Collector Power Dissipation 100 mW Type Name Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Z C 2003. 12. 12 Revision

1.14. 2n3904e.pdf Size:91K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=30V, VEB=3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H 0.50 _ + J 0.13 0.05 Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. J Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906E. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT ESM VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA Marking PC * Collector Power Dissipation 100 mW Type Name Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Z C 2003. 12. 12 Revision No :

1.15. 2n3904c.pdf Size:73K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. H 0.45 _ Low Collector Output Capacitance H J 14.00 + 0.50 K 0.55 MAX F F : Cob=4pF(Max.) @VCB=5V. L 2.30 M 0.45 MAX Complementary to 2N3906C. N 1.00 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TO-92 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1994. 2.

1.16. 2n3904s.pdf Size:410K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 @VCE=30V, VEB=3V. 1 G 1.90 H 0.95 Excellent DC Current Gain Linearity. J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. M 0.20 MIN N 1.00+0.20/-0.10 Low Collector Output Capacitance P 7 : Cob=4pF(Max.) @VCB=5V. M Complementary to 2N3906S. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT SOT-23 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA Marking Lot No. PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Type Name ZC Tstg -5

1.17. 2n3904a.pdf Size:657K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. F 1.27 G 0.85 Low Collector Output Capacitance H 0.45 _ : Cob=4pF(Max.) @VCB=5V. H J 14.00 + 0.50 K 0.55 MAX F F Complementary to 2N3906A. L 2.30 M 0.45 MAX N 1.00 1 2 3 1. EMITTER 2. BASE MAXIMUM RATING (Ta=25 ) 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V TO-92 VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2002. 2. 1 Revision No : 0 1/5 A J C L M 2N3904A E

1.18. 2n3904u.pdf Size:51K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=30V, VEB=3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+0.1/-0.06 J 1.30 Low Saturation Voltage K 0.00-0.10 L 0.70 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. H _ + M 0.42 0.10 Low Collector Output Capacitance N 0.10 MIN N N K : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906U. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT USM VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA Marking IB Base Current 50 mA PC * Collector Power Dissipation 100 mW Lot No. Tj Junction Temperature 150 Tstg -55 150 Storag

1.19. 2n3904.pdf Size:307K _lge

2N3904
2N3904
2N3904(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10?A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown vol

1.20. 2n3904.pdf Size:612K _wietron

2N3904
2N3904
2N3904 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 200 mAdc PD 625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 40 Vdc - Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 60 Vdc - Vdc V(BR)EBO 6.0 Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = 40 Vdc, I =0) - 0.1 CE B - ICBO uAdc 0.1 Collector Cutoff Current (V = 60 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 5.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw 2N3904 ELECTRICAL CHARACTERISTICS (T

1.21. h2n3904.pdf Size:50K _hsmc

2N3904
2N3904
Spec. No. : HE6218 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2005.01.14 MICROELECTRONICS CORP. Page No. : 1/5 H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .....................................................................................................

See also transistors datasheet: 2N389A-1 , 2N38A , 2N39 , 2N3900 , 2N3900A , 2N3901 , 2N3902 , 2N3903 , A1015 , 2N3904CSM , 2N3904DCSM , 2N3905 , 2N3905CSM , 2N3906 , 2N3906CSM , 2N3907 , 2N3908 .

Keywords

 2N3904 Datasheet  2N3904 Datenblatt  2N3904 RoHS  2N3904 Distributor
 2N3904 Application Notes  2N3904 Component  2N3904 Circuit  2N3904 Schematic
 2N3904 Equivalent  2N3904 Cross Reference  2N3904 Data Sheet  2N3904 Fiche Technique

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