| |
2N3904
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N3904
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.31
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 40
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.2
Maximum junction temperature (Tj), °C: 135
Transition frequency (ft), MHz: 300
Collector capacitance (Cc), pF: 4
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of 2N3904
transistor: TO92
2N3904
Equivalent Transistors - Cross-Reference Search 2N3904
PDF document for downloads:
1.1. 2n3903_2n3904.pdf  Size:212K _motorola  |
 | MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by 2N3903/D
General Purpose Transistors
2N3903
NPN Silicon
*
2N3904
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
CASE 2904, STYLE 1
Rating Symbol Value Unit
TO92 (TO226AA)
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 60 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC 200 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Device Dissipation @ TC = 25C PD 1.5 Watts
Derate above 25C 12 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range
THERMAL CHARACTERISTICS*
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junction to Case RqJC 83.3 C/W
* Indicates Data in addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHAR |
1.2. 2n3904_3.pdf Size:51K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N3904
NPN switching transistor
1999 Apr 23
Product specification
Supersedes data of 1997 Jul 15
Philips Semiconductors Product specification
NPN switching transistor 2N3904
FEATURES PINNING
Low current (max. 200 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1 collector
2 base
APPLICATIONS
3 emitter
High-speed switching.
DESCRIPTION
1
handbook, halfpage
1
2
NPN switching transistor in a TO-92; SOT54 plastic
3
2
package. PNP complement: 2N3906.
3
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC) - 200 mA
ICM peak collector current - 300 mA
IBM peak base current - 100 mA
Ptot total power |
1.3. 2n3904.pdf Size:60K _st  |
 | 2N3904
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
2N3904 2N3904 TO-92 / Bulk
2N3904-AP 2N3904 TO-92 / Ammopack
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE PNP COMPLEMENTARY TYPE IS
2N3906
TO-92 TO-92
APPLICATIONS
Bulk Ammopack
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 60 V
VCEO Collector-Emitter Voltage (IB = 0) 40 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
IC Collector Current 200 mA
P Total Dissipation at T = 25 oC 625 mW
tot C
o
Tstg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
1/5
February 2003
2N3904
THERMAL DATA
o
Rthj-amb Thermal Resistance Junction-Ambient Max 200 C/W
o
R Thermal Resistance Junction-Case |
1.4. 2n3904_mmbt3904_pzt3904.pdf Size:111K _fairchild_semi  |
 | 2N3904 MMBT3904 PZT3904
C
C
E
E
C
C TO-92
B
B
SOT-23 B
E
SOT-223
Mark: 1A
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
TJ, Tstg C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Characteristic Max |
1.5. 2n3904.pdf Size:169K _fairchild_semi  |
 | October 2011
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
2N3904 PZT3904
MMBT3904
C
C
E
E
C
B
TO-92 SOT-23 SOT-223
B
Mark:1A
EBC
Absolute Maximum Ratings* Ta = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = |
1.6. 2n3903_2n3904.pdf Size:66K _central  |
 | 145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
|
1.7. 2n3904(to-92).pdf Size:260K _mcc _0001.jpg) |
_0002.jpg) | MCC
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
2N3904
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
NPN General
Capable of 600mW of Power Disspation and 200mA Ic
Epoxy meets UL 94 V-0 flammability rating
Purpose Amplifier
Moisure Sensitivity Level 1
Through Hole Package
Marking:Type number
TO-92
Electrical Characteristics @ 25C Unless Otherwise Specified
Symbol Parameter Min Max Units
A E
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc
(IC=1.0mAdc, IB=0)
V(BR)CBO Collector-Base Breakdown Voltage 60 Vdc
B
(IC=10Adc, IE=0)
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 Vdc
(IE=10Adc, IC=0)
IBL Base Cutoff Current 50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ICEX Collector Cutoff Current 50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
C
hFE DC Current Gain*
( |
1.8. 2n3903_2n3904.pdf Size:177K _onsemi  |
 | 2N3903, 2N3904
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
Pb-Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
BASE
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
1
Collector-Base Voltage VCBO 60 Vdc
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 200 mAdc
Total Device Dissipation PD
@ TA = 25C 625 mW
Derate above 25C 5.0 mW/C
TO-92
CASE 29
Total Device Dissipation PD
STYLE 1
@ TC = 25C 1.5 W
Derate above 25C 12 mW/C
1
1
2
2
Operating and Storage Junction TJ, Tstg -55 to +150 C
3
3
Temperature Range
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
THERMAL CHARACTERISTICS (Note 1)
AMMO PACK
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RqJA 200 C/W
Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAMS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation ab |
1.9. 2n3904.pdf Size:378K _secos  |
 | 2N3904
0.2A, 60V
NPN General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES TO-92
Power Dissipation PCM: 625mW (Ta=25°C)
G H
1Emitter
1
1
1
Collector Current ICM: 200mA
2Base
2
2
2
Collector – Base Voltage V(BR)CBO: 60V
3Collector
3
3
3
J
A D
CLASSIFICATION OF hFE(1) Millimeter
REF.
B
Min. Max.
A 4.40 4.70
Product-Rank 2N3904-O 2N3904-Y 2N3904-G
B 4.30 4.70
K
C 12.70 -
Range 100~200 200~300 300~400 D 3.30 3.81
E 0.36 0.56
E C F F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
Collector
3
2
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector - Base Voltage VCBO 60 V
Collector - Emitter Voltage VCEO 40 V
Emitter - Base Voltage VEBO 6 V
A
Collector Current -Continuous IC 0.2
Cpllector Power Dissipation PC 625 mW
Junction, Storage Te |
1.10. 2n3904a.pdf Size:657K _kec  |
 | SEMICONDUCTOR 2N3904A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
N DIM MILLIMETERS
: ICEX=50nA(Max.), IBL=50nA(Max.)
A 4.70 MAX
E
K
B 4.80 MAX
@VCE=30V, VEB=3V. G
C 3.70 MAX
D
Low Saturation Voltage
D 0.45
E 1.00
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
F 1.27
G 0.85
Low Collector Output Capacitance
H 0.45
_
: Cob=4pF(Max.) @VCB=5V. H
J 14.00 + 0.50
K 0.55 MAX
F F
Complementary to 2N3906A.
L 2.30
M 0.45 MAX
N 1.00
1 2 3
1. EMITTER
2. BASE
MAXIMUM RATING (Ta=25 )
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage 60 V
TO-92
VCEO
Collector-Emitter Voltage 40 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 200 mA
IB
Base Current 50 mA
625 mW
Ta=25
Collector Power
PC
Dissipation
1.5 W
Tc=25
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
2002. 2. 1 Revision No : 0 1/5
A
J
C
L
M
2N3904A
E |
1.11. 2n3904s.pdf Size:410K _kec  |
 | SEMICONDUCTOR 2N3904S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
DIM MILLIMETERS
FEATURES
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
Low Leakage Current
C 1.30 MAX
2
: ICEX=50nA(Max.), IBL=50nA(Max.) 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
@VCE=30V, VEB=3V.
1
G 1.90
H 0.95
Excellent DC Current Gain Linearity.
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Low Saturation Voltage
L 0.55
P P
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
M 0.20 MIN
N 1.00+0.20/-0.10
Low Collector Output Capacitance
P 7
: Cob=4pF(Max.) @VCB=5V.
M
Complementary to 2N3906S.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
SOT-23
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Voltage 40 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 200 mA
IB
Base Current 50 mA
Marking
Lot No.
PC *
Collector Power Dissipation 350 mW
Tj
Junction Temperature 150
Type Name
ZC
Tstg -5 |
1.12. 2n3904u.pdf Size:51K _kec  |
 | SEMICONDUCTOR 2N3904U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
M B M
DIM MILLIMETERS
FEATURES
_
A
+
2.00 0.20
D
2
Low Leakage Current _
+
B 1.25 0.15
_
+
C 0.90 0.10
: ICEX=50nA(Max.), IBL=50nA(Max.)
3
1
D 0.3+0.10/-0.05
_
E +
2.10 0.20
@VCE=30V, VEB=3V.
G 0.65
Excellent DC Current Gain Linearity.
H 0.15+0.1/-0.06
J 1.30
Low Saturation Voltage
K 0.00-0.10
L 0.70
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
H
_
+
M 0.42 0.10
Low Collector Output Capacitance
N 0.10 MIN
N N
K
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906U.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
USM
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Voltage 40 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 200 mA
Marking
IB
Base Current 50 mA
PC *
Collector Power Dissipation 100 mW
Lot No.
Tj
Junction Temperature 150
Tstg -55 150
Storag |
1.13. 2n3904v.pdf Size:92K _kec  |
 | SEMICONDUCTOR 2N3904V
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
FEATURES
Low Leakage Current
DIM MILLIMETERS
2
_
: ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05
_
B 0.8 +0.05
@VCE=30V, VEB=3V. 1
3
_
C 0.5 + 0.05
_
D 0.3 + 0.05
Excellent DC Current Gain Linearity.
_
E 1.2 + 0.05
Low Saturation Voltage _
G 0.8 0.05
+
H 0.40
P P
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
_
J 0.12 + 0.05
_
K 0.2 + 0.05
Low Collector Output Capacitance
P 5
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906V.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
VSM
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Voltage 40 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 200 mA
IB
Base Current 50 mA
Marking
PC *
Collector Power Dissipation 100 mW
Type Name
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range Z C
2003. 12. 12 Revision |
1.14. 2n3904e.pdf Size:91K _kec  |
 | SEMICONDUCTOR 2N3904E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
DIM MILLIMETERS
FEATURES
_
+
A 1.60 0.10
D
Low Leakage Current _
+
2 B 0.85 0.10
_
+
C 0.70 0.10
: ICEX=50nA(Max.), IBL=50nA(Max.)
3
1
D 0.27+0.10/-0.05
_
@VCE=30V, VEB=3V. E 1.60 0.10
+
_
+
1.00 0.10
G
Excellent DC Current Gain Linearity.
H 0.50
_
+
J 0.13 0.05
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
J
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906E.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
ESM
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Voltage 40 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 200 mA
IB
Base Current 50 mA
Marking
PC *
Collector Power Dissipation 100 mW
Type Name
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range Z C
2003. 12. 12 Revision No : |
1.15. 2n3904.pdf Size:51K _kec  |
 | SEMICONDUCTOR 2N3904
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
N DIM MILLIMETERS
: ICEX=50nA(Max.), IBL=50nA(Max.)
A 4.70 MAX
E
K
B 4.80 MAX
@VCE=30V, VEB=3V. G
C 3.70 MAX
D
Excellent DC Current Gain Linearity.
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
G 0.85
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
H 0.45
_
Low Collector Output Capacitance H
J 14.00 + 0.50
K 0.55 MAX
F F
: Cob=4pF(Max.) @VCB=5V.
L 2.30
M 0.45 MAX
Complementary to 2N3906.
N 1.00
1 2 3
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TO-92
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Voltage 40 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 200 mA
IB
Base Current 50 mA
625 mW
Ta=25
Collector Power
PC
Dissipation
1.5 W
Tc=25
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
2002. 9. 12 Revision N |
1.16. 2n3904c.pdf Size:73K _kec  |
 | SEMICONDUCTOR 2N3904C
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
N DIM MILLIMETERS
: ICEX=50nA(Max.), IBL=50nA(Max.)
A 4.70 MAX
E
K
B 4.80 MAX
@VCE=30V, VEB=3V. G
C 3.70 MAX
D
Excellent DC Current Gain Linearity.
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
G 0.85
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
H 0.45
_
Low Collector Output Capacitance H
J 14.00 + 0.50
K 0.55 MAX
F F
: Cob=4pF(Max.) @VCB=5V.
L 2.30
M 0.45 MAX
Complementary to 2N3906C.
N 1.00
1 2 3
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TO-92
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Voltage 40 V
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 200 mA
IB
Base Current 50 mA
625 mW
Ta=25
Collector Power
PC
Dissipation
1.5 W
Tc=25
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
1994. 2. |
1.17. 2n3904.pdf Size:307K _lge  |
 | 2N3904(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
NPN silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the PNP transistor 2N3906 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3904
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10?A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V
Emitter-base breakdown vol |
1.18. 2n3904.pdf Size:612K _wietron  |
 | 2N3904
NPN General Purpose Transistors
TO-92
1. EMITTER
1
2
2. BASE
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol
Value Unit
Collector-Emitter Voltage V
CEO 40 Vdc
Collector-Base Voltage VCBO 60
Vdc
Emitter-Base VOltage VEBO
6.0 Vdc
Collector Current IC
200 mAdc
PD 625
Total Device Dissipation T =25 C W
A
Junction Temperature T 150
j C
Storage, Temperature Tstg
C
-55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
-
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 40
Vdc
-
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 60 Vdc
-
Vdc
V(BR)EBO 6.0
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
uAdc
ICE0
Collector Cutoff Current (V = 40 Vdc, I =0) - 0.1
CE
B
-
ICBO uAdc
0.1
Collector Cutoff Current (V = 60 Vdc, IE=0)
CB
-
IEBO
d
Emitter Cutoff Current (VEB= 5.0V c, I =0) 0.1 uAdc
C
WEITRON
http://www.weitron.com.tw
2N3904
ELECTRICAL CHARACTERISTICS (T |
See also transistors datasheet: 2N389A-1
, 2N38A
, 2N39
, 2N3900
, 2N3900A
, 2N3901
, 2N3902
, 2N3903
, BC558
, 2N3904CSM
, 2N3904DCSM
, 2N3905
, 2N3905CSM
, 2N3906
, 2N3906CSM
, 2N3907
, 2N3908
. Keywords| 2N3904
Datasheet | 2N3904
Datenblatt | 2N3904
RoHS | 2N3904
Distributor | | 2N3904
Application Notes | 2N3904
Component | 2N3904
Circuit | 2N3904
Schematic | | 2N3904
Equivalent | 2N3904
Cross Reference | 2N3904
Data Sheet | 2N3904
Fiche Technique |
|
