KSA643-Y Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSA643-Y

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of KSA643-Y transistor: TO92

KSA643-Y Equivalent Transistors - Cross-Reference Search

KSA643-Y PDF document for downloads:

4.1. ksa643.pdf Size:40K _fairchild_semi

KSA643 Low Frequency Power Amplifier • Collector Power Dissipation: PC =500mW • Complement to KSD261 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -500 mA ICP * Collector Current (pulse) -700 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW?10ms, Duty cycle?50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -20 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V ICBO Collector Cut-off Current V

4.2. ksa643.pdf Size:199K _lge

KSA643(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Collector dissipation Complement to KSD261 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100uA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE= -10uA, IC=0 -5 V Collector cut-off current ICBO VCB= -25 V , IE=0 -0.2 uA Emitter cut-off current IEBO VEB= -3 V , IC=0 -0.2 uA DC current gain hFE* VCE= -1 V, IC= -100mA 40 4

5.1. ksa642.pdf Size:39K _fairchild_semi

KSA642 Low Frequency Power Amplifier • Complement to KSD227 • Collector Power Dissipation : PC = 400mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -300 mA ICP * Collector Current (Pulse) -500 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW?10ms, Duty cycle?50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 -30 V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE = -10µA. IC=0 - 5 V ICBO Collector Cut-off Current V

See also transistors datasheet: KSA642 , KSA642-G , KSA642-O , KSA642-Y , KSA643 , KSA643-G , KSA643-O , KSA643-R , BC517 , KSA707 , KSA708 , KSA708-O , KSA708-Y , KSA709 , KSA709-G , KSA709-O , KSA709-R .

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