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2N3906 Transistor (IC) Datasheet. Cross Reference Search. 2N3906 Equivalent

Type Designator: 2N3906

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N3906 transistor: TO92

2N3906 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3906 PDF:

1.1. 2n3905_2n3906.pdf Size:199K _motorola

2N3906
2N3906

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 29–04, STYLE 1 Collector–Emitter Voltage VCEO 40 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc C

1.2. 2n3906_3.pdf Size:52K _philips

2N3906
2N3906

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current (max. 200 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter • High-speed switch

1.3. 2n3906.pdf Size:61K _st

2N3906
2N3906

2N3906 ® SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS 2N3904 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT S

1.4. 2n3906.pdf Size:148K _fairchild_semi

2N3906
2N3906

October 2011 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10?A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark:2A EBC Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-

1.5. 2n3906_mmbt3906_pzt3906.pdf Size:106K _fairchild_semi

2N3906
2N3906

2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage

1.6. 2n3905_2n3906.pdf Size:67K _central

2N3906
2N3906

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.7. 2n3906(to-92).pdf Size:225K _mcc

2N3906
2N3906

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3906 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier

1.8. 2n3906.pdf Size:173K _onsemi

2N3906
2N3906

2N3906 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR • Pb-Free Packages are Available* 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit 1 EMITTER Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO-92 CASE 29 Total Device Dissipation @ TA =

1.9. 2n3906.pdf Size:186K _utc

2N3906
2N3906

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc(MAX)=625mW 1 * Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box 2N

1.10. 2n3906.pdf Size:52K _auk

2N3906
2N3906

2N3906 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3904 Ordering Information Type NO. Marking Package Code 2N3906 2N3906 T0-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1

1.11. 2n3906.pdf Size:376K _secos

2N3906
2N3906

2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 ? Power Dissipation PCM: 625mW (Ta=25°C) A D ? Collector Current ICM: -200mA ? Collector – Base Voltage V(BR)CBO: -40V B CLASSIFICATION OF hFE E C F Product-Rank 2N3906-O 2N3906-Y Range 100~200 200~3

1.12. 2n3906v.pdf Size:92K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=-30V, VEB=-3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.0

1.13. 2n3906e.pdf Size:91K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=-30V, VEB=-3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H

1.14. 2n3906c.pdf Size:76K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.4V(Max

1.15. 2n3906u.pdf Size:50K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=-30V, VEB=-3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+

1.16. 2n3906.pdf Size:51K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.4V(Max.

1.17. 2n3906a.pdf Size:561K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. F 1.27 G 0.85 Low Collector

1.18. 2n3906s.pdf Size:51K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 @VCE=-30V, VEB=-3V. 1 G 1.90 H 0.95 Excellent DC Current Gain Linearity. J 0.13+0.

1.19. 2n3906.pdf Size:307K _lge

2N3906
2N3906

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25? unless otherwise noted)

1.20. 2n3906.pdf Size:541K _wietron

2N3906
2N3906

2N3906 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temp

1.21. h2n3906.pdf Size:51K _hsmc

2N3906
2N3906

Spec. No. : HE6240 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2005.01.14 MICROELECTRONICS CORP. Page No. : 1/5 H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N3906 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.........................................................

1.22. 2n3906e.pdf Size:387K _first_silicon

2N3906
2N3906

SEMICONDUCTOR 2N3906E TECHNICAL DATA General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Shipping Device Marking 2 2N3906E 2A 3000/Tape & Reel 1 SC –89 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector–Emitter Voltage V – 40 Vdc CEO COLLECTOR Collector–Base Voltage V CBO – 4

1.23. 2n3906_to92.pdf Size:437K _first_silicon

2N3906
2N3906

SEMICONDUCTOR 2N3906 TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt

1.24. 2n3906u.pdf Size:603K _first_silicon

2N3906
2N3906

SEMICONDUCTOR 2N3906U TECHNICAL DATA General Purpose Transistors PNP Silicon ● FEATURES We declare that the material of product compliant with RoHS requirements and Halogen Free. ● DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping 2N3906U 2A 3000/Tape&Reel 1 2 SC-70 / SOT– 323 ● MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Limits Unit Collector–Emitte

1.25. 2n3906s.pdf Size:199K _first_silicon

2N3906
2N3906

SEMICONDUCTOR 2N3906S TECHNICAL DATA General Purpose Transistors PNP Silicon • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 2 2N3906S 2A 3000/Tape & Reel 1 SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector–Emitter Voltage V – 40 Vdc CEO COLLECTOR Collector–Base Voltage V CBO – 40

1.26. 2n3906.pdf Size:245K _shenzhen-tuofeng-semi

2N3906
2N3906

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

See also transistors datasheet: 2N3901 , 2N3902 , 2N3903 , 2N3904 , 2N3904CSM , 2N3904DCSM , 2N3905 , 2N3905CSM , 2N3053 , 2N3906CSM , 2N3907 , 2N3908 , 2N391 , 2N3910 , 2N3911 , 2N3912 , 2N3913 .

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