All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N3906
  2N3906
  2N3906
  2N3906
 
2N3906
  2N3906
  2N3906
  2N3906
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2N3906 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N3906 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3906

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 250

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N3906 transistor: TO92

2N3906 Equivalent Transistors - Cross-Reference Search

2N3906 PDF doc:

1.1. 2n3905_2n3906.pdf Size:199K _motorola

2N3906
2N3906
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Power Dissipation @ TA = 60C PD 250 mW Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS* Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W * Indicates Data in addition to JEDEC Requirements. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted

1.2. 2n3906_3.pdf Size:52K _philips

2N3906
2N3906
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter High-speed switching in industrial applications. DESCRIPTION 1 handbook, halfpage 1 2 PNP switching transistor in a TO-92; SOT54 plastic 3 2 package. NPN complement: 2N3904. 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -40 V VCEO collector-emitter voltage open base - -40 V VEBO emitter-base voltage open collector - -6 V IC collector current (DC) - -200 mA ICM peak collector current - -300 mA IBM peak base cur

1.3. 2n3906.pdf Size:61K _st

2N3906
2N3906
2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS 2N3904 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -60 V VCEO Collector-Emitter Voltage (IB = 0) -40 V VEBO Emitter-Base Voltage (IC = 0) -6 V IC Collector Current -200 mA P Total Dissipation at T = 25 oC 625 mW tot C o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/5 February 2003 2N3906 THERMAL DATA o Rthj-amb Thermal Resistance Junction-Ambient Max 200 C/W o R Thermal Resistance Junction-C

1.4. 2n3906_mmbt3906_pzt3906.pdf Size:106K _fairchild_semi

2N3906
2N3906
2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -200 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3906 *MMBT3906 **P

1.5. 2n3906.pdf Size:148K _fairchild_semi

2N3906
2N3906
October 2011 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier and switching applications at collector currents of 10?A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark:2A EBC Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25C unless otherwise noted

1.6. 2n3905_2n3906.pdf Size:67K _central

2N3906
2N3906
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n3906(to-92).pdf Size:225K _mcc

2N3906
2N3906
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3906 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier Moisure Sensitivity Level 1 Through Hole Package Marking:Type number TO-92 Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc (IC=1.0mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage 40 Vdc B (IC=10Adc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 5.0 Vdc (IE=10Adc, IC=0) IBL Base Cutoff Current 50 nAdc (VCE=30Vdc, VBE=3.0Vdc) ICEX Collector Cutoff Current 50 nAdc (VCE=30Vdc, VBE=3.0Vdc) ON CHARACTERISTICS C hFE DC Current Gain* (IC

1.8. 2n3906.pdf Size:173K _onsemi

2N3906
2N3906
2N3906 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR Pb-Free Packages are Available* 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit 1 EMITTER Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO-92 CASE 29 Total Device Dissipation @ TA = 25C PD 625 mW STYLE 1 Derate above 25C 5.0 mW/C Total Power Dissipation @ TA = 60C PD 250 mW 1 1 2 2 Total Device Dissipation @ TC = 25C PD 1.5 W 3 3 Derate above 25C 12 mW/C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Operating and Storage Junction TJ, Tstg -55 to +150 C AMMO PACK Temperature Range THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum 3906 Ratin

1.9. 2n3906.pdf Size:186K _utc

2N3906
2N3906
UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc(MAX)=625mW 1 * Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box 2N3906L-T92-K 2N3906G-T92-K TO-92 E B C Bulk 2N3906L-T92-R 2N3906G-T92-R TO-92 E B C Tape Reel Note: Pin Assignment: E: EMITTER B: BASE C: COLLECTOR www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., LTD QW-R201-028, C 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector dissipation PC 625 mW Junction Temperature

1.10. 2n3906.pdf Size:52K _auk

2N3906
2N3906
2N3906 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3904 Ordering Information Type NO. Marking Package Code 2N3906 2N3906 T0-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9011-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 2N3906 Absolute maximum ratings Ta=25°C ° ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C ° ° ° Characteristic Symbol Test Condition Min.

1.11. 2n3906.pdf Size:376K _secos

2N3906
2N3906
2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 ? Power Dissipation PCM: 625mW (Ta=25°C) A D ? Collector Current ICM: -200mA ? Collector – Base Voltage V(BR)CBO: -40V B CLASSIFICATION OF hFE E C F Product-Rank 2N3906-O 2N3906-Y Range 100~200 200~300 G H ?Emitter Collector ?Base ?? ?Collector J Millimeter Millimeter ?? REF. REF. Min. Max. Min. Max. Base A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1.10 1.40 ?? D 3.30 3.81 J 2.42 2.66 Emitter E 0.36 0.56 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 V A Collector Current -Continuous IC -0.2 Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 150, -55~15

1.12. 2n3906c.pdf Size:76K _kec

2N3906
2N3906
SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. H 0.45 _ Low Collector Output Capacitance H J 14.00 + 0.50 K 0.55 MAX F F : Cob=4.5pF(Max.) @VCB=5V. L 2.30 M 0.45 MAX Complementary to 2N3904C. N 1.00 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TO-92 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2002.

1.13. 2n3906e.pdf Size:91K _kec

2N3906
2N3906
SEMICONDUCTOR 2N3906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=-30V, VEB=-3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H 0.50 _ + J 0.13 0.05 Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. J Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904E. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT ESM VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA PC Collector Power Dissipation 100 mW Marking Type Name Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Z A 2003. 12. 12

1.14. 2n3906s.pdf Size:51K _kec

2N3906
2N3906
SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 @VCE=-30V, VEB=-3V. 1 G 1.90 H 0.95 Excellent DC Current Gain Linearity. J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. M 0.20 MIN N 1.00+0.20/-0.10 Low Collector Output Capacitance P 7 : Cob=4.5pF(Max.) @VCB=-5V. M Complementary to 2N3904S. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT SOT-23 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA Marking Lot No. PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Type Na

1.15. 2n3906u.pdf Size:50K _kec

2N3906
2N3906
SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 : ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=-30V, VEB=-3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+0.1/-0.06 J 1.30 Low Saturation Voltage K 0.00-0.10 L 0.70 : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. H _ + M 0.42 0.10 Low Collector Output Capacitance N 0.10 MIN N N K : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904U. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT USM VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA Marking PC Collector Power Dissipation 100 mW Lot No. Tj Junction Temperature 150 Tstg -5

1.16. 2n3906v.pdf Size:92K _kec

2N3906
2N3906
SEMICONDUCTOR 2N3906V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=-30V, VEB=-3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.05 + H 0.40 P P : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. _ J 0.12 + 0.05 _ K 0.2 + 0.05 Low Collector Output Capacitance P 5 : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904V. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VSM VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA PC Collector Power Dissipation 100 mW Marking Type Name Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Z A 2003. 1

1.17. 2n3906.pdf Size:51K _kec

2N3906
2N3906
SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. H 0.45 _ Low Collector Output Capacitance H J 14.00 + 0.50 K 0.55 MAX F F : Cob=4.5pF(Max.) @VCB=5V. L 2.30 M 0.45 MAX Complementary to 2N3904. N 1.00 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TO-92 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2002. 9.

1.18. 2n3906a.pdf Size:561K _kec

2N3906
2N3906
SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. F 1.27 G 0.85 Low Collector Output Capacitance H 0.45 _ : Cob=4.5pF(Max.) @VCB=5V. H J 14.00 + 0.50 K 0.55 MAX F F Complementary to 2N3904A. L 2.30 M 0.45 MAX N 1.00 1 2 3 1. EMITTER 2. BASE MAXIMUM RATING (Ta=25 ) 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage -40 V TO-92 VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2002. 2. 1 Revision No : 0 1/5 A J C L

1.19. 2n3906.pdf Size:307K _lge

2N3906
2N3906
2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = -10?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , IB=0 -40 V Emitter-base b

1.20. 2n3906.pdf Size:541K _wietron

2N3906
2N3906
2N3906 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO -40 Vdc - Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = -40 Vdc, I =0) - -0.1 CE B ICBO - -0.1 uAdc Collector Cutoff Current (V = -40 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= -5.0V c, I =0) -0.1 uAdc C WEITRON http://www.weitron.com.tw 2N3906 ELECTRICAL CHARA

1.21. h2n3906.pdf Size:51K _hsmc

2N3906
2N3906
Spec. No. : HE6240 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2005.01.14 MICROELECTRONICS CORP. Page No. : 1/5 H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N3906 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .....................................................................................................

See also transistors datasheet: 2N3901 , 2N3902 , 2N3903 , 2N3904 , 2N3904CSM , 2N3904DCSM , 2N3905 , 2N3905CSM , 2N3053 , 2N3906CSM , 2N3907 , 2N3908 , 2N391 , 2N3910 , 2N3911 , 2N3912 , 2N3913 .

Keywords

 2N3906 Datasheet  2N3906 Datenblatt  2N3906 RoHS  2N3906 Distributor
 2N3906 Application Notes  2N3906 Component  2N3906 Circuit  2N3906 Schematic
 2N3906 Equivalent  2N3906 Cross Reference  2N3906 Data Sheet  2N3906 Fiche Technique

 

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com