| |
2N3906
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N3906
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.31
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 40
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.2
Maximum junction temperature (Tj), °C: 135
Transition frequency (ft), MHz: 250
Collector capacitance (Cc), pF: 5
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: - Package of 2N3906
transistor: TO92
2N3906
Equivalent Transistors - Cross-Reference Search 2N3906
PDF doc:
1.1. 2n3905_2n3906.pdf  Size:199K _motorola  |
 | MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by 2N3905/D
General Purpose Transistors
2N3905
PNP Silicon
*
2N3906
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
3
Rating Symbol Value Unit
CASE 2904, STYLE 1
CollectorEmitter Voltage VCEO 40 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 40 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 200 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Power Dissipation @ TA = 60C PD 250 mW
Total Device Dissipation @ TC = 25C PD 1.5 Watts
Derate above 25C 12 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range
THERMAL CHARACTERISTICS*
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junction to Case RqJC 83.3 C/W
* Indicates Data in addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted |
1.2. 2n3906_3.pdf Size:52K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N3906
PNP switching transistor
1999 Apr 23
Product specification
Supersedes data of 1997 Jun 20
Philips Semiconductors Product specification
PNP switching transistor 2N3906
FEATURES PINNING
Low current (max. 200 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1 collector
2 base
APPLICATIONS
3 emitter
High-speed switching in industrial applications.
DESCRIPTION
1
handbook, halfpage
1
2
PNP switching transistor in a TO-92; SOT54 plastic
3
2
package. NPN complement: 2N3904.
3
MAM280
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base - -40 V
VEBO emitter-base voltage open collector - -6 V
IC collector current (DC) - -200 mA
ICM peak collector current - -300 mA
IBM peak base cur |
1.3. 2n3906.pdf Size:61K _st  |
 | 2N3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
2N3906 2N3906 TO-92 / Bulk
2N3906-AP 2N3906 TO-92 / Ammopack
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE NPN COMPLEMENTARY TYPE IS
2N3904
TO-92 TO-92
APPLICATIONS
Bulk Ammopack
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -60 V
VCEO Collector-Emitter Voltage (IB = 0) -40 V
VEBO Emitter-Base Voltage (IC = 0) -6 V
IC Collector Current -200 mA
P Total Dissipation at T = 25 oC 625 mW
tot C
o
Tstg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
1/5
February 2003
2N3906
THERMAL DATA
o
Rthj-amb Thermal Resistance Junction-Ambient Max 200 C/W
o
R Thermal Resistance Junction-C |
1.4. 2n3906_mmbt3906_pzt3906.pdf Size:106K _fairchild_semi  |
 | 2N3906 MMBT3906 PZT3906
C
C
E
E
C
C TO-92
B
B
B
E
SOT-223
SOT-23
Mark: 2A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 A to 100 mA.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -40 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current - Continuous -200 mA
Operating and Storage Junction Temperature Range -55 to +150
TJ, Tstg C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Characteristic Max Units
2N3906 *MMBT3906 **P |
1.5. 2n3906.pdf Size:148K _fairchild_semi  |
 | October 2011
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
Features
This device is designed for general purpose amplifier and switching applications at collector currents of 10?A to 100
mA.
2N3906 PZT3906
MMBT3906
C
C
E
E
C
B
TO-92 SOT-23 SOT-223
B
Mark:2A
EBC
Absolute Maximum Ratings* Ta = 25C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -40 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current - Continuous -200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25C unless otherwise noted
|
1.6. 2n3905_2n3906.pdf Size:67K _central  |
 | 145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
|
1.7. 2n3906(to-92).pdf Size:225K _mcc _0001.jpg) |
_0002.jpg) | MCC
Micro Commercial Components
TM
20736 Marilla Street Chatsworth 2N3906
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
PNP General
Capable of 600mW of Power Disspation and 200mA Ic
Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier
Moisure Sensitivity Level 1
Through Hole Package
Marking:Type number
TO-92
Electrical Characteristics @ 25C Unless Otherwise Specified
Symbol Parameter Min Max Units
A E
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc
(IC=1.0mAdc, IB=0)
V(BR)CBO Collector-Base Breakdown Voltage 40 Vdc
B
(IC=10Adc, IE=0)
V(BR)EBO Emitter-Base Breakdown Voltage 5.0 Vdc
(IE=10Adc, IC=0)
IBL Base Cutoff Current 50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ICEX Collector Cutoff Current 50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
C
hFE DC Current Gain*
(IC |
1.8. 2n3906.pdf Size:173K _onsemi  |
 | 2N3906
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
COLLECTOR
Pb-Free Packages are Available*
3
2
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
1
EMITTER
Collector - Emitter Voltage VCEO 40 Vdc
Collector - Base Voltage VCBO 40 Vdc
Emitter - Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 200 mAdc
TO-92
CASE 29
Total Device Dissipation @ TA = 25C PD 625 mW
STYLE 1
Derate above 25C 5.0 mW/C
Total Power Dissipation @ TA = 60C PD 250 mW
1
1
2
2
Total Device Dissipation @ TC = 25C PD 1.5 W 3
3
Derate above 25C 12 mW/C
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Operating and Storage Junction TJ, Tstg -55 to +150 C
AMMO PACK
Temperature Range
THERMAL CHARACTERISTICS (Note 1)
Characteristic Symbol Max Unit MARKING DIAGRAM
Thermal Resistance, Junction-to-Ambient RqJA 200 C/W
Thermal Resistance, Junction-to-Case RqJC 83.3 C/W
2N
Stresses exceeding Maximum Ratings may damage the device. Maximum
3906
Ratin |
1.9. 2n3906.pdf Size:376K _secos  |
 | 2N3906
-0.2A , -40V
PNP General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
TO-92
? Power Dissipation PCM: 625mW (Ta=25°C)
A
D
? Collector Current ICM: -200mA
? Collector – Base Voltage V(BR)CBO: -40V
B
CLASSIFICATION OF hFE
E C
F
Product-Rank 2N3906-O 2N3906-Y
Range 100~200 200~300
G H
?Emitter
Collector
?Base
??
?Collector
J
Millimeter Millimeter
??
REF. REF.
Min. Max. Min. Max.
Base
A 4.40 4.70 F 0.30 0.51
B 4.30 4.70 G 1.27 TYP.
C 12.70 - H 1.10 1.40
??
D 3.30 3.81 J 2.42 2.66
Emitter
E 0.36 0.56 K 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector - Base Voltage VCBO -40 V
Collector - Emitter Voltage VCEO -40 V
Emitter - Base Voltage VEBO -5 V
A
Collector Current -Continuous IC -0.2
Collector Power Dissipation PC 625 mW
Junction, Storage Temperature TJ, TSTG 150, -55~15 |
1.10. 2n3906v.pdf Size:92K _kec  |
 | SEMICONDUCTOR 2N3906V
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
FEATURES
Low Leakage Current
DIM MILLIMETERS
2
_
: ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05
_
B 0.8 +0.05
@VCE=-30V, VEB=-3V. 1
3
_
C 0.5 + 0.05
_
D 0.3 + 0.05
Excellent DC Current Gain Linearity.
_
E 1.2 + 0.05
Low Saturation Voltage _
G 0.8 0.05
+
H 0.40
P P
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
_
J 0.12 + 0.05
_
K 0.2 + 0.05
Low Collector Output Capacitance
P 5
: Cob=4.5pF(Max.) @VCB=-5V.
Complementary to 2N3904V.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
VSM
VCBO
Collector-Base Voltage -40 V
VCEO
Collector-Emitter Voltage -40 V
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -200 mA
IB
Base Current -50 mA
PC
Collector Power Dissipation 100 mW
Marking
Type Name
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
Z A
2003. 1 |
1.11. 2n3906a.pdf Size:561K _kec  |
 | SEMICONDUCTOR 2N3906A
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
N DIM MILLIMETERS
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
A 4.70 MAX
E
K
B 4.80 MAX
@VCE=-30V, VEB=-3V. G
C 3.70 MAX
D
Low Saturation Voltage
D 0.45
E 1.00
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
F 1.27
G 0.85
Low Collector Output Capacitance
H 0.45
_
: Cob=4.5pF(Max.) @VCB=5V. H
J 14.00 + 0.50
K 0.55 MAX
F F
Complementary to 2N3904A.
L 2.30
M 0.45 MAX
N 1.00
1 2 3
1. EMITTER
2. BASE
MAXIMUM RATING (Ta=25 )
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage -40 V
TO-92
VCEO
Collector-Emitter Voltage -40 V
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -200 mA
IB
Base Current -50 mA
625 mW
Ta=25
Collector Power
PC
Dissipation
1.5 W
Tc=25
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
2002. 2. 1 Revision No : 0 1/5
A
J
C
L
|
1.12. 2n3906c.pdf Size:76K _kec  |
 | SEMICONDUCTOR 2N3906C
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
N DIM MILLIMETERS
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
A 4.70 MAX
E
K
B 4.80 MAX
@VCE=-30V, VEB=-3V. G
C 3.70 MAX
D
Excellent DC Current Gain Linearity.
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
G 0.85
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
H 0.45
_
Low Collector Output Capacitance H
J 14.00 + 0.50
K 0.55 MAX
F F
: Cob=4.5pF(Max.) @VCB=5V.
L 2.30
M 0.45 MAX
Complementary to 2N3904C.
N 1.00
1 2 3
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TO-92
VCBO
Collector-Base Voltage -40 V
VCEO
Collector-Emitter Voltage -40 V
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -200 mA
IB
Base Current -50 mA
625 mW
Ta=25
Collector Power
PC
Dissipation
1.5 W
Tc=25
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
2002. |
1.13. 2n3906.pdf Size:51K _kec  |
 | SEMICONDUCTOR 2N3906
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
N DIM MILLIMETERS
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
A 4.70 MAX
E
K
B 4.80 MAX
@VCE=-30V, VEB=-3V. G
C 3.70 MAX
D
Excellent DC Current Gain Linearity.
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
G 0.85
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
H 0.45
_
Low Collector Output Capacitance H
J 14.00 + 0.50
K 0.55 MAX
F F
: Cob=4.5pF(Max.) @VCB=5V.
L 2.30
M 0.45 MAX
Complementary to 2N3904.
N 1.00
1 2 3
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TO-92
VCBO
Collector-Base Voltage -40 V
VCEO
Collector-Emitter Voltage -40 V
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -200 mA
IB
Base Current -50 mA
625 mW
Ta=25
Collector Power
PC
Dissipation
1.5 W
Tc=25
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
2002. 9. |
1.14. 2n3906s.pdf Size:51K _kec  |
 | SEMICONDUCTOR 2N3906S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
DIM MILLIMETERS
FEATURES
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
Low Leakage Current
C 1.30 MAX
2
: ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
@VCE=-30V, VEB=-3V.
1
G 1.90
H 0.95
Excellent DC Current Gain Linearity.
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Low Saturation Voltage
L 0.55
P P
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
M 0.20 MIN
N 1.00+0.20/-0.10
Low Collector Output Capacitance
P 7
: Cob=4.5pF(Max.) @VCB=-5V.
M
Complementary to 2N3904S.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
SOT-23
VCBO
Collector-Base Voltage -40 V
VCEO
Collector-Emitter Voltage -40 V
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -200 mA
IB
Base Current -50 mA
Marking
Lot No.
PC *
Collector Power Dissipation 350 mW
Tj
Junction Temperature 150
Type Na |
1.15. 2n3906e.pdf Size:91K _kec  |
 | SEMICONDUCTOR 2N3906E
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
DIM MILLIMETERS
FEATURES
_
+
A 1.60 0.10
D
Low Leakage Current _
+
2 B 0.85 0.10
_
+
C 0.70 0.10
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
3
1
D 0.27+0.10/-0.05
_
@VCE=-30V, VEB=-3V. E 1.60 0.10
+
_
+
1.00 0.10
G
Excellent DC Current Gain Linearity.
H 0.50
_
+
J 0.13 0.05
Low Saturation Voltage
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
J
Low Collector Output Capacitance
: Cob=4.5pF(Max.) @VCB=-5V.
Complementary to 2N3904E.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
ESM
VCBO
Collector-Base Voltage -40 V
VCEO
Collector-Emitter Voltage -40 V
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -200 mA
IB
Base Current -50 mA
PC
Collector Power Dissipation 100 mW
Marking
Type Name
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
Z A
2003. 12. 12 |
1.16. 2n3906u.pdf Size:50K _kec  |
 | SEMICONDUCTOR 2N3906U
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
M B M
DIM MILLIMETERS
FEATURES
_
A
+
2.00 0.20
D
2
Low Leakage Current _
+
B 1.25 0.15
_
+
C 0.90 0.10
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
3
1
D 0.3+0.10/-0.05
_
E +
2.10 0.20
@VCE=-30V, VEB=-3V.
G 0.65
Excellent DC Current Gain Linearity.
H 0.15+0.1/-0.06
J 1.30
Low Saturation Voltage
K 0.00-0.10
L 0.70
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
H
_
+
M 0.42 0.10
Low Collector Output Capacitance
N 0.10 MIN
N N
K
: Cob=4.5pF(Max.) @VCB=-5V.
Complementary to 2N3904U.
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
USM
VCBO
Collector-Base Voltage -40 V
VCEO
Collector-Emitter Voltage -40 V
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -200 mA
IB
Base Current -50 mA
Marking
PC
Collector Power Dissipation 100 mW
Lot No.
Tj
Junction Temperature 150
Tstg -5 |
1.17. 2n3906.pdf Size:307K _lge  |
 | 2N3906(PNP)
TO-92 Bipolar Transistors
1. EMITTER
TO-92
2. BASE
3. COLLECTOR
Features
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the NPN transistor 2N3904 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3906
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.2 A
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = -10?A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , IB=0 -40 V
Emitter-base b |
1.18. 2n3906.pdf Size:541K _wietron  |
 | 2N3906
PNP General Purpose Transistors
TO-92
1. EMITTER
1
2
2. BASE
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol
Value Unit
Collector-Emitter Voltage V
CEO -40 Vdc
Collector-Base Voltage VCBO -40
Vdc
Emitter-Base VOltage VEBO
-5.0 Vdc
Collector Current IC
-200 mAdc
PD 0.625
Total Device Dissipation T =25 C W
A
Junction Temperature T 150
j C
Storage, Temperature Tstg
C
-55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
-
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO -40
Vdc
-
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 Vdc
-
Vdc
V(BR)EBO -5.0
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
uAdc
ICE0
Collector Cutoff Current (V = -40 Vdc, I =0) - -0.1
CE
B
ICBO -
-0.1 uAdc
Collector Cutoff Current (V = -40 Vdc, IE=0)
CB
-
IEBO
d
Emitter Cutoff Current (VEB= -5.0V c, I =0) -0.1 uAdc
C
WEITRON
http://www.weitron.com.tw
2N3906
ELECTRICAL CHARA |
1.19. h2n3906.pdf Size:51K _hsmc  |
 | Spec. No. : HE6240
HI-SINCERITY
Issued Date : 1992.11.25
Revised Date : 2005.01.14
MICROELECTRONICS CORP.
Page No. : 1/5
H2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N3906 is designed for general purpose switching and amplifier applications.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C)............................................................................................................... 625 mW
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ..................................................................................................... |
See also transistors datasheet: 2N3901
, 2N3902
, 2N3903
, 2N3904
, 2N3904CSM
, 2N3904DCSM
, 2N3905
, 2N3905CSM
, 2N4401
, 2N3906CSM
, 2N3907
, 2N3908
, 2N391
, 2N3910
, 2N3911
, 2N3912
, 2N3913
. Keywords| 2N3906
Datasheet | 2N3906
Datenblatt | 2N3906
RoHS | 2N3906
Distributor | | 2N3906
Application Notes | 2N3906
Component | 2N3906
Circuit | 2N3906
Schematic | | 2N3906
Equivalent | 2N3906
Cross Reference | 2N3906
Data Sheet | 2N3906
Fiche Technique |
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