KSC1009-Y Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSC1009-Y

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 0.7

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of KSC1009-Y transistor: TO92

KSC1009-Y Equivalent Transistors - Cross-Reference Search

KSC1009-Y PDF document for downloads:

3.1. ksc1009.pdf Size:37K _fairchild_semi

KSC1009 High Voltage Amplifier • High Collector-Base Voltage : VCBO=160V • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW • Complement to KSA709 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 8 V IC Collector Current 700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 160 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 140 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 µ

4.1. ksc1008.pdf Size:149K _fairchild_semi

September 2006 KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base) • Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector) 1 2 3 KSC1008 : 1. Emitter 2. Base 3. Collector • Complement to KSA708 KSC1008C : 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector current 700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature +150 °C Tstg Storage Temperature -55 ~ +150 °C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The fa

See also transistors datasheet: KSB907 , KSC1008 , KSC1008-G , KSC1008-R , KSC1008-Y , KSC1009 , KSC1009-G , KSC1009-R , TIP31 , KSC1070 , KSC1072 , KSC1096 , KSC1098 , KSC1173 , KSC1173-O , KSC1173-Y , KSC1187 .

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