KSC1187-R Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSC1187-R

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 400

Collector capacitance (Cc), pF: 0.6

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of KSC1187-R transistor: TO92

KSC1187-R Equivalent Transistors - Cross-Reference Search

KSC1187-R PDF document for downloads:

3.1. ksc1187.pdf Size:48K _fairchild_semi

KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) • High Current Gain Bandwidth Product : fT=700MHz • High Power Gain : GPE=24dB (TYP.) at f=45MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 30 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 30 V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 V ICBO Collector Cut-off Current VCB=20V, IE=0 0.1 µA hFE DC Current Gain VCE=10V, IC=2mA 40 240 fT Current Gain Bandwidth Product VCE=10V, IC=3mA

5.1. ksc1173.pdf Size:248K _fairchild_semi

August 2009 KSC1173 NPN Epitaxial Silicon Transistor Features • Low Frequency Power Amplifier, Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W (TC=25°C) • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Base Voltage 5 V IC Collector Current 3 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC1173 Rev. A2 1 KSC1173 — NPN Epitaxial Silicon Transistor Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC

See also transistors datasheet: KSC1072 , KSC1096 , KSC1098 , KSC1173 , KSC1173-O , KSC1173-Y , KSC1187 , KSC1187-O , 2N3773 , KSC1187-Y , KSC1188 , KSC1222 , KSC1222-G , KSC1222-L , KSC1222-V , KSC1222-Y , KSC1393 .

Keywords