KSC3265-Y Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSC3265-Y

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 120

Collector capacitance (Cc), pF: 13

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of KSC3265-Y transistor: TO236

KSC3265-Y Equivalent Transistors - Cross-Reference Search

KSC3265-Y PDF document for downloads:

3.1. ksc3265.pdf Size:44K _fairchild_semi

KSC3265 Low Frequency Amplifier 3 • Complement to KSA1298 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA IB Base Current 160 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C ? Refer to KSD261 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 5 V ICBO Collector Cut-off Current VCB=30V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=5V, IC=0 100 nA hFE1 DC Current Gain VCE=1V, IC=100mA 100 320 hFE2 VCE=6V, IC=800mA 40 VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=20mA 0.4

5.1. ksc3296.pdf Size:39K _fairchild_semi

KSC3296 Power Amplifier Applications • Complement to KSA1304 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 1.5 A IB Base Current 0.5 A PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 120V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE DC Current Gain VCE = 10V, IC = 500mA 40 75 140 VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1.5 V VBE(on) Base-Emitter ON Voltage VCE = 10V, IC = 500mA 0.65 0.75 0.85 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 4 MHz Co

See also transistors datasheet: KSC3125 , KSC3158 , KSC3158-O , KSC3158-R , KSC3158-Y , KSC3233 , KSC3265 , KSC3265-O , 2N60 , KSC3296 , KSC3488 , KSC3488-G , KSC3488-O , KSC3488-Y , KSC3502 , KSC3502C , KSC3502D .

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