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2N3962CSM Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3962CSM

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 40

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N3962CSM transistor: LCC3

2N3962CSM Equivalent Transistors - Cross-Reference Search

2N3962CSM PDF document for downloads:

4.1. 2n3962.pdf Size:43K _microelectronics

5.1. 2n396-a.pdf Size:238K _rca

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5.2. 2n3960.pdf Size:43K _semicoa

Data Sheet No. 2N3960 Generic Part Number: Type 2N3960 2N3960 Geometry 0003 Polarity NPN REF: MIL-PRF-19500/399 Qual Level: JAN - JANTXV Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-18 case. • Also available in chip form using the 0003 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases. TO-18 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 12 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 4.5 V Power Dissipation, TA = 25oC 400 mW PT Derate above 25oC 2.3 mW/oC o C Operating Junction Temperature TJ -65 to +200 o C Storage Temperature TSTG -65 to +200 Data Sheet No. 2N3960 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 20 --- V IC = 10 µA Collector-Emitter Breakdown Voltage V(BR)CEO 12 --

See also transistors datasheet: 2N3950 , 2N3953 , 2N3959 , 2N396 , 2N3960 , 2N3960UB , 2N3961 , 2N3962 , BC237 , 2N3963 , 2N3963CSM , 2N3964 , 2N3964CSM , 2N3965 , 2N3965CSM , 2N396A , 2N397 .

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