All Transistors. KSD288Y Datasheet

 

KSD288Y Datasheet and Replacement


   Type Designator: KSD288Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220
 

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KSD288Y Datasheet (PDF)

 8.1. Size:42K  fairchild semi
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KSD288Y

KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : VCBO=80V Collector Dissipation : PC=25W(TC=25C)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-

Datasheet: KSD261 , KSD261G , KSD261O , KSD261R , KSD261Y , KSD288 , KSD288O , KSD288R , 2222A , KSD362 , KSD362N , KSD362O , KSD362R , KSD363 , KSD363O , KSD363R , KSD363Y .

Keywords - KSD288Y transistor datasheet

 KSD288Y cross reference
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