KSD5004 Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSD5004

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 800

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of KSD5004 transistor: TO247

KSD5004 Equivalent Transistors - Cross-Reference Search

KSD5004 PDF document for downloads:

5.1. ksd5041.pdf Size:68K _fairchild_semi

KSD5041 AF Output Amplifier for Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC Collector Current 5 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 20 V BVEBO Emitter-Base Breakdown Voltage IC=10µA, IC=0 7 V ICBO Collector Cut-off Current VCB=10V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=7V, IC=0 0.1 µA hFE1 DC Current Gain VCE=2V, IC=0.5A 180 600 hFE2 VCE=2V, IC=2A 150 VCE (sat) Collector-Emitter Saturation Voltage IC

5.2. ksd5018.pdf Size:54K _samsung

KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR TO-220 BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 275 V Emitter Base Voltage VEBO 10 V Collector Current (DC) IC 4 A *Collector Current (Pulse) IC 6 A 1.Base 2.Collector 3.Emitter Base Current (DC) IB 0.5 A Collector Dissipation ( TC=25 ) PC 40 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25 ) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage VCEO (sus) IC = 1.5A, IB = 0.05A, L = 25mH 275 V Collector Emitter Voltage VCER IC = 1mA, RBE = 330 600 V Collector Cutoff Current ICES VCE = 500V 1 mA Emitter Cutoff Current IEBO V EB= 10V, IC = 0 1 mA Collector Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 5mA 1.5 V IC = 3A, IB = 20mA 1.5 V Base-Emitt

5.3. ksd5071pfc.pdf Size:24K _samsung

NPN TRIPLE DIFFUSED KSD5071 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT TO-3PF APPLICATION (DAMPER DIODE BUILT IN) • High Collector-Base Voltage (VCBO=1500V) • High Switching Speed (tf. max=0.4uS) ABSOLUTE MAXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector Current (DC) IC 3.5 A Collector Current (Pulse) IC 10 A Collector Dissipation (TC=25 ) PC 50 W Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter Storage Temperature TSTG -50 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 40 200 mA DC Current Gain hFE VCE = 5V, IC = 0.5A 8 Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 0.8A 8 V Base-Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 0.8A 1.5 V Current Gain B

5.4. ksd5075pfc.pdf Size:24K _samsung

NPN TRIPLE DIFFUSED KSD5075 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT TO-3PF APPLICATION (NO Damper Diode) • High Collector-Base Voltage (VCBO=1500V) • High Speed Switching (tf. max=0.4uS) ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1500 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 6 V Collector Current (DC) IC 3.5 A Collector Current (Pulse) IC 10 A Collector Dissipation (TC=25 ) PC 50 W Junction Temperature TJ 150 Storage Temperature TSTG -50 ~ 150 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 1 mA DC Current Gain hFE VCE = 5V, IC = 0.5A 8 Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 0.8A 8 V Base- Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 0.8A 1.5 V Current Gain Bandw

5.5. ksd5057.pdf Size:132K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5057 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A ICP Collector Current-Peak 20 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5057 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V Collector-Emitt

5.6. ksd5068.pdf Size:117K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5068 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Peak 30 A Collector Power Dissipation PC @ TC=25? 150 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5068 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 6A; IBB= 1.2A 5.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 6A; IBB=

5.7. ksd5059.pdf Size:128K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5059 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A ICP Collector Current-Peak 20 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5059 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V Collector-Emitter Saturation Voltage IC=

5.8. ksd5066.pdf Size:117K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5066 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 16 A Collector Power Dissipation PC @ TC=25? 120 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5066 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 4A; IBB= 0.8A 5.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 4A; IBB=

5.9. ksd5058.pdf Size:128K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5058 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 20 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5058 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V Collector-Emitter Saturation Voltage IC=

5.10. ksd5018.pdf Size:129K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 275V(Min) ·Built-in Resistor Between Base and Emitter ·Wide Area of Safe Operation APPLICATIONS ·Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 275 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IBB Base Current-Continuous 0.5 A Collector Power Dissipation PC @ TC=25? 40 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCER Collector-Emitter Voltage IC= 1mA; RB

5.11. ksd5017.pdf Size:124K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5017 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A ICP Collector Current-Peak 16 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5017 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 5A; IBB= 1A 5.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 5A; IBB= 1A

5.12. ksd5070.pdf Size:128K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5070 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak 10 A Collector Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5070 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 2A; IBB= 0.6A 8.0 V VCE(sat) Base-Emitter Satu

5.13. ksd5062.pdf Size:121K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 16 A Collector Power Dissipation PC @ TC=25? 120 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 4A; IBB= 0.8A 5.0 V VCE(sat) Base-Emitter Satur

5.14. ksd5060.pdf Size:121K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5060 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak 10 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5060 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 2A; IBB= 0.6A 8.0 V VCE(sat) Base-Emitter Satu

5.15. ksd5056.pdf Size:132K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5056 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color monitor horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 20 A Collector Power Dissipation PC @ TC=25? 60 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5056 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V Collector-Emitt

5.16. ksd5065.pdf Size:116K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5065 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Peak 10 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5065 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 2.5A;

5.17. ksd5061.pdf Size:120K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5061 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Peak 10 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5061 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VCE(sat) Base-Emitter Sat

5.18. ksd5064.pdf Size:117K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5064 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak 10 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5064 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-Emitter Saturation Voltage IC= 2A; IBB= 0.6A 8.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 2A; IBB

See also transistors datasheet: KSD471A , KSD471A-G , KSD471A-O , KSD471A-Y , KSD5000 , KSD5001 , KSD5002 , KSD5003 , 2N2222 , KSD5005 , KSD5006 , KSD5007 , KSD5010 , KSD5011 , KSD5012 , KSD5013 , KSD5014 .

Keywords