KSH350I Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSH350I

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 15

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of KSH350I transistor: TO252

KSH350I Equivalent Transistors - Cross-Reference Search

KSH350I PDF document for downloads:

4.1. ksh350.pdf Size:43K _fairchild_semi

KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V VEBO Emitter-Base Voltage - 3 V IC Collector Current (DC) - 0.5 A ICP Collector Current (Pulse) - 0.75 A PC Collector Dissipation (TC = 25°C) 15 W Collector Dissipation (Ta = 25°C) 1.56 W TJ Junction Temperature 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage IC = -1mA, IB = 0 -300 V ICEO Collector Cut-off Current VCB = -300V, IE =0 -0.1 mA IEBO Emitter Cut-off Current VEB = -3V, IC = 0 -0.1 mA hFE * DC Current Gain VCE = -10V, IC = -50mA

4.2. ksh350.pdf Size:22K _samsung

KSH350 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER TRANSISTORS D-PAK DPAK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (“ -I “ Suffix) 1 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 300 V Collector Emitter Voltage VCEO - 300 V I-PAK Emitter Base Voltage VEBO - 3 V Collector Current (DC) IC - 0.5 A Collector Current (Pulse) IC - 0.75 A Collector Dissipation (TA = 25 ) PC 1.56 W Collector Dissipation (TC = 25 ) PC 15 W 1 Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (Tc =25 ) Characteristic Symbol Test Conditions Min Max Unit * Collector Emitter Sustaining Voltage VCEO (sus) IC = - 1mA, IB = 0 - 300 V Collector Cutoff Current ICEO VCB = - 300V, IE =0 - 0.1 mA Emitter Cutoff Current IEBO VEB = - 3V, IC = 0 - 0.1 mA * DC Current Gain h

See also transistors datasheet: KSH31I , KSH32 , KSH32C , KSH32CI , KSH32I , KSH340 , KSH340I , KSH350 , GT806B , KSH41 , KSH41C , KSH41CI , KSH42 , KSH42C , KSH42CI , KSH44H11 , KSH44H11I .

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