KSH41 Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSH41

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of KSH41 transistor: TO252

KSH41 Equivalent Transistors - Cross-Reference Search

KSH41 PDF document for downloads:

1.1. ksh41c.pdf Size:53K _fairchild_semi

KSH41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V ICEO Collector Cut-off Current VCE =

1.2. ksh41.pdf Size:74K _samsung

KSH41C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER D-PAK LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • Load Formed for Surface Mount Application(No Suffix) 1 • Straight Lead (I.PACK, “- I Suffix) • Electrically Similar to Popular TIP41 and TIP41C ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter Characteristic Symbol Rating Unit I-PAK Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 10 A 1 Base Current IB 2 A Collector Dissipation ( TC=25 ) PC 20 W 1. Base 2. Collector 3. Emitter PC 1.75 W Collector Dissipation (TA=25 ) Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25 ) Characteristic Symbol Test Conditions Min Max Unit * Collector Emitter Sustaining Voltage VCEO (sus) IC = 30mA, IB = 0 100 V Collector Cutoff Current ICEO VCE = 60V, IB =

See also transistors datasheet: KSH32 , KSH32C , KSH32CI , KSH32I , KSH340 , KSH340I , KSH350 , KSH350I , 2N4403 , KSH41C , KSH41CI , KSH42 , KSH42C , KSH42CI , KSH44H11 , KSH44H11I , KSH45H11 .

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