KSH47 Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSH47

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 15

Maximum collector-base voltage |Ucb|, V: 350

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of KSH47 transistor: TO252

KSH47 Equivalent Transistors - Cross-Reference Search

KSH47 PDF document for downloads:

1.1. ksh47_ksh50.pdf Size:50K _fairchild_semi

KSH47/50 High Voltage and High Reliability D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP47 and TIP50 D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage : KSH47 350 V : KSH50 500 V VCEO Collector-Emitter Voltage : KSH47 250 V : KSH50 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1 A ICP Collector Current (Pulse) 2 A IB Base Current 0.6 A PC Collector Dissipation (TC=25°C) 15 W Collector Dissipation (Ta=25°C) 1.56 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : KSH47 IC = 30mA, IB = 0 250 V : K

1.2. ksh47.pdf Size:24K _samsung

KSH47/50 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY D-PAK D-PACK FOR SURFACE MOUNT APPLICATIONS • Load Formed for Surface Mount Application(No Suffix) • Straight Lead (I.PACK, “- I Suffix) • Electrically Similar to Popular TIP47 and TIP47C 1 ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter Characteristic Symbol Rating Unit Collector Emitter Voltage : KSH47 VCBO 350 V I-PAK : KSH50 500 V Collector Emitter Voltage : KSH47 VCEO 250 V : KSH50 400 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 1 A 1 Collector Current (Pulse) IC 2 A Base Current IB 0.6 A Collector Dissipation ( TC=25 ) PC 15 W 1. Base 2. Collector 3. Emitter PC 1.56 W Collector Dissipation (TA=25 ) Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25 ) Characteristic Symbol Test Conditions Min Max Unit * Collector Emitter Sustaining Voltage : KSH47 VCEO (sus) IC = 30mA, IB = 0 250 V : KSH50 40

See also transistors datasheet: KSH41CI , KSH42 , KSH42C , KSH42CI , KSH44H11 , KSH44H11I , KSH45H11 , KSH45H11I , BC158 , KSH47I , KSH50 , KSH50I , KSP05 , KSP06 , KSP10 , KSP12 , KSP13 .

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