KSP92 Transistor Datasheet. Parameters and Characteristics.

Type Designator: KSP92

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.5

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of KSP92 transistor: TO92

KSP92 Equivalent Transistors - Cross-Reference Search

KSP92 PDF document for downloads:

1.1. ksp92_ksp93.pdf Size:63K _fairchild_semi

KSP92/93 High Voltage Transistor TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : KSP92 -300 V : KSP93 -200 V VCEO Collector-Emitter Voltage : KSP92 -300 V : KSP93 -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation (Ta=25°C) 625 mW Derate above 25°C5 mW/°C PC Collector Power Dissipation (TC=25°C) 1.5 W Derate above 25°C12 mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100µA, IE=0 : KSP92 -300 V : KSP93 -200 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 : KSP92 -300 V : KSP93 -200 V BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V ICBO Collector Cur-off Current : KSP92

1.2. ksp92.pdf Size:58K _samsung

KSP92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage : KSP92 VCBO -300 V : KSP93 -200 V Collector-Emitter Voltage : KSP92 VCEO -300 V : KSP93 -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Dissipation (TA=25 ) PC 625 mW mW/ Derate above 25 5 Collector Dissipation (TA=25 ) W PC 1.5 Derate above 25 mW/ 12 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V :KSP92 -300 V :KSP93 -200 Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 V -300 :KSP92 V -200 :KSP93 V Emitter-Base Breakdown Voltage BVEBO IE= -100 , IC=0 -5 ICBO Collector Cur-off Current VCB= -200V, IE=0 -0.25 :KSP92 VCB= -160V, IE=0 -0.25

See also transistors datasheet: KSP75 , KSP76 , KSP77 , KSP8097 , KSP8098 , KSP8099 , KSP8598 , KSP8599 , BC549 , KSP93 , KSR1001 , KSR1002 , KSR1003 , KSR1004 , KSR1005 , KSR1006 , KSR1007 .

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