2N4031 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4031

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 180

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N4031 transistor: TO18

2N4031 Equivalent Transistors - Cross-Reference Search

2N4031 PDF document for downloads:

1.1. 2n4031_2n4033.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4031; 2N4033 PNP medium power transistors 1997 May 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP medium power transistors 2N4031; 2N4033 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Audio frequency applications for industrial service. 1 DESCRIPTION handbook, halfpage 3 2 PNP medium power transistor in a TO-39 metal package. 2 1 3 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --80 V VCEO collector-emitter voltage open base --80 V ICM peak collector current --1.5 A Ptot total power dissipation Tamb ? 25 °C - 0.8 W hFE DC current gain IC = -500 mA; VCE = -5V 2N4031 25 - 2N4033 70

5.1. 2n4036_2n4037.pdf Size:86K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4036/D General Purpose Transistors PNP Silicon 2N4036 COLLECTOR 2N4037 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector–Emitter Voltage VCEO –65 –40 Vdc 3 2 1 Collector–Base Voltage VCBO –90 –60 Vdc CASE 79–04, STYLE 1 Emitter–Base Voltage VEBO –7.0 –7.0 Vdc TO–39 (TO–205AD) Base Current IB –0.5 Adc Collector Current — Continuous IC –1.0 Adc Continuous Power Dissipation PD at or Below TC = 25°C 5.0 5.0 Watts Linear Derating Factor 28.6 28.6 mW/°C Continuous Power Dissipation PD at or Below TA = 25°C 1.0 1.0 Watts Linear Derating Factor 5.72 5.72 mW/°C Operating and Storage Junction TJ, Tstg –65 to +200 °C Temperature Range Lead Temperature TL 230 °C 1/16? from Case for 10 Seconds THERMAL CHARACTERISTICS Characteristic Symbol 2N4036 2N4037 Unit Thermal Resistance, Junction to Case RqJC 35 35 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

5.2. 2n4036-37.pdf Size:86K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4036/D General Purpose Transistors PNP Silicon 2N4036 COLLECTOR 2N4037 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector–Emitter Voltage VCEO –65 –40 Vdc 3 2 1 Collector–Base Voltage VCBO –90 –60 Vdc CASE 79–04, STYLE 1 Emitter–Base Voltage VEBO –7.0 –7.0 Vdc TO–39 (TO–205AD) Base Current IB –0.5 Adc Collector Current — Continuous IC –1.0 Adc Continuous Power Dissipation PD at or Below TC = 25°C 5.0 5.0 Watts Linear Derating Factor 28.6 28.6 mW/°C Continuous Power Dissipation PD at or Below TA = 25°C 1.0 1.0 Watts Linear Derating Factor 5.72 5.72 mW/°C Operating and Storage Junction TJ, Tstg –65 to +200 °C Temperature Range Lead Temperature TL 230 °C 1/16? from Case for 10 Seconds THERMAL CHARACTERISTICS Characteristic Symbol 2N4036 2N4037 Unit Thermal Resistance, Junction to Case RqJC 35 35 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

5.3. 2n4036.pdf Size:51K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4036 PNP switching transistor 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistor 2N4036 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Amplifier and switching applications. DESCRIPTION 1 handbook, halfpage 3 2 PNP switching transistor in a TO-39 metal package. 2 1 3 MAM318 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --90 V VCEO collector-emitter voltage open base --65 V IC collector current (DC) --1 A Ptot total power dissipation Tmb ? 25 °C - 7W hFE DC current gain IC = -150 mA; VCE = -2 V 20 200 fT transition frequency IC = -50 mA; VCE = -10 V; f = 100 MHz

5.4. 2n4033.pdf Size:489K _st

2N4033 ® SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N4033 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -80 V VCEO Collector-Emitter Voltage (IB = 0) -80 V V Emitter-Base Voltage (I = 0) -5 V EBO C I Collector Current -1 A C P 0.8 W tot Total Dissipation at Tamb ? 45 oC 4 W at T ? 45 oC C o T Storage Temperature -55 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/6 September 2002 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) 2N4033 THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 37.5 C/W o R Thermal Resistance Junction-Ambient Max 187.5 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Ty

5.5. 2n4036_2n4037.pdf Size:492K _central

2N4036 2N4037 www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N4036 2N4037 UNITS Collector-Base Voltage VCBO 90 60 V Collector-Emitter Voltage VCEO 65 40 V Emitter-Base Voltage VEBO 7.0 7.0 V Continuous Collector Current IC 1.0 A Continuous Base Current IB 0.5 A Power Dissipation PD 5.0 W Power Dissipation (TA=25°C) PD 1.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ?JC 35 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N4036 2N4037 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=90V - 1.0 - - µA ICBO VCB=60V - - - 0.25 µA ICEX VCE=85V, VEB=1.5V - 100 - - µA ICEX VCE=30V, VEB=1.5V, TC=150°C - - - 100 mA IEBO VEB=7.0V - 10 - - µA IEBO VEB=5.0V

5.6. 2n4030-33.pdf Size:143K _microelectronics

See also transistors datasheet: 2N4024 , 2N4025 , 2N4026 , 2N4027 , 2N4028 , 2N4029 , 2N403 , 2N4030 , OC44 , 2N4032 , 2N4033 , 2N4033CSM4 , 2N4034 , 2N4035 , 2N4036 , 2N4037 , 2N404 .

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