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2N4112 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4112

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 165

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 120

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N4112 transistor: TO3

2N4112 Equivalent Transistors - Cross-Reference Search

2N4112 PDF document for downloads:

5.1. 2n411.pdf Size:129K _rca

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5.2. 2n4117a_pn4117a_sst4117_2n4118a_pn4118a_sst4118_2n4119a_pn4119a_sst4119.pdf Size:68K _vishay

2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 4117 -0.6 to -1.8 -40 70 30 4118 -1 to -3 -40 80 80 4119 -2 to -6 -40 100 200 FEATURES BENEFITS APPLICATIONS D Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Voltage D High-Impedance Transducer with High-Impedance Source Amplifiers D Very Low Current/Voltage Operation D Low Power Consumption (Battery) D Smoke Detector Input D Ultrahigh Input Impedance D Maximum Signal Output, Low Noise D Infrared Detector Amplifier D Low Noise D High Sensitivity to Low-Level Signals D Precision Test Equipment DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide The hermetically sealed TO-206AF package allows full ultra-high input impedance. These devices are specified with military processing per MIL-S-19500 (see Military a 1-pA limit and typicall

5.3. 2n4113.pdf Size:11K _semelab

2N4113 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 80 V IC(CONT) 5 A hFE @ 5/2 (VCE / IC) 40 120 - ft 50M Hz PD 30 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at

5.4. 2n4114.pdf Size:12K _semelab

2N4114 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 80 V IC(CONT) 5 A hFE @ 5/2 (VCE / IC) 100 200 - ft 60M Hz PD 30 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at

5.5. 2n4117_2n4118_2n4119_pn4117_pn4118_pn4119_sst4117_sst4118_sst4119.pdf Size:21K _calogic

N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119 FEATURES PIN CONFIGURATION • Low Leakage • • Low Capacitance • ABSOLUTE MAXIMUM RATINGS TO-92 (T = 25oC unless otherwise noted) A TO-72 Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC C G G S S D D Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/oC SOT-23 NOTE: Stresses above those listed under "Absolute Maximum G Ratings" may cause permanent damage to the device. These are stress ratings only and functional

See also transistors datasheet: 2N410 , 2N4100 , 2N4104 , 2N4105 , 2N4106 , 2N4106A , 2N411 , 2N4111 , BC546 , 2N4113 , 2N4114 , 2N4115 , 2N4116 , 2N412 , 2N4121 , 2N4122 , 2N4123 .

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