| |
KTA1272
Transistor Datasheet. Parameters and Characteristics. Type Designator: KTA1272
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.4
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: - Package of KTA1272
transistor: TO92
KTA1272
Equivalent Transistors - Cross-Reference Search KTA1272
PDF document for downloads:
1.1. kta1272.pdf  Size:344K _kec  |
 | SEMICONDUCTOR KTA1272
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
B
·High hFE : hFE=100?320.
·Complementary to KTC3204.
DIM MILLIMETERS
O
A 3.20 MAX
H
M B 4.30 MAX
C 0.55 MAX
_
D 2.40 + 0.15
E 1.27
MAXIMUM RATING (Ta=25?)
F 2.30
C
_
+
G 14.00 0.50
CHARACTERISTIC SYMBOL RATING UNIT
H 0.60 MAX
J 1.05
VCBO -35 V
Collector-Base Voltage
E E
K 1.45
L 25
VCEO
Collector-Emitter Voltage -30 V
M 0.80
N 0.55 MAX
3
1 2 N
VEBO
Emitter-Base Voltage -5 V
O 0.75
L
IC
Collector Current -800 mA
1. EMITTER
IE
Emitter Current 800 mA
2. COLLECTOR
3. BASE
PC
Collector Power Dissipation 400 mW
Tj
Junction Temperature 150
?
TO-92M
Tstg -55?150 ?
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25?)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-30V, IE=0
Collector Cut-off Current - - -100 nA
IEBO VEB=-5V, IC=0
Emitter Cut-off Current - - -100 nA
V(BR)CEO IC=-10mA, IB=0
Collector- |
4.1. kta1270.pdf Size:442K _kec  |
 | SEMICONDUCTOR KTA1270
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.
N DIM MILLIMETERS
Complementary to KTC3202.
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
MAXIMUM RATING (Ta=25 )
H 0.45
_
H
J 14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT
K 0.55 MAX
F F
L 2.30
VCBO -35 V
Collector-Base Voltage
M 0.30 +0.10
- 0.05
N 1.00
VCEO -30 V
Collector-Emitter Voltage 1 2 3
VEBO
Emitter-Base Voltage -5 V 1. EMITTER
2. COLLECTOR
IC
Collector Current -500 mA 3. BASE
IE
Base Current 500 mA
PC
Collector Power Dissipation 625 mW
TO-92
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-35V, IE=0
Collector Cut-off Current - - -0.1
A
IEBO VEB=-5V, IC=0
Emitter Cut-off Curren |
4.2. kta1277.pdf Size:76K _kec  |
 | SEMICONDUCTOR KTA1277
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
DC-DC CONVERTER.
B D
LOW POWER SWITCHING REGULATOR.
FEATURES
DIM MILLIMETERS
P
High Breakdown Voltage.
DEPTH:0.2
A 7.20 MAX
Low Collector Saturation Voltage. B 5.20 MAX
C
C 0.60 MAX
S
High Speed Switching.
D 2.50 MAX
Q
E 1.15 MAX
K
F 1.27
G 1.70 MAX
H 0.55 MAX
FF
_
J 14.00 + 0.50
K 0.35 MIN
HH H
MAXIMUM RATING (Ta=25 )
_
L 0.75 + 0.10
E M 4
M
CHARACTERISTIC SYMBOL RATING UNIT
N 25
O 1.25
L
1 2 3
VCBO -400 V
Collector-Base Voltage H
P ?1.50
Q 0.10 MAX
N N
VCEO -400 V
Collector-Emitter Voltage _
R 12.50 + 0.50
1. EMITTER
S 1.00
VEBO
Emitter-Base Voltage -7 V 2. COLLECTOR
3. BASE
IC
Collector Current -0.5 A
PC
Collector Power Dissipation 1 W
TO-92L
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-400V
Collecto |
4.3. kta1275.pdf Size:770K _kec  |
 | SEMICONDUCTOR KTA1275
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
COLOR TV VERT. DEFELECTION OUTPUT APPLICATION.
COLOR TV CLASS B SOUND OUTPUT APPLICATION.
B D
FEATURES
High Voltage : VCEO=-160V.
DIM MILLIMETERS
P
Large Continuous Collector Current Capability.
DEPTH:0.2
A 7.20 MAX
Complementary to KTC3228. B 5.20 MAX
C
C 0.60 MAX
S
D 2.50 MAX
Q
E 1.15 MAX
K
F 1.27
G 1.70 MAX
H 0.55 MAX
FF
_
MAXIMUM RATING (Ta=25 ) J 14.00 + 0.50
K 0.35 MIN
HH H
_
CHARACTERISTIC SYMBOL RATING UNIT L 0.75 + 0.10
E M 4
M
N 25
VCBO -160 V
Collector-Base Voltage
O 1.25
L
1 2 3
H
P ?1.50
VCEO -160 V
Collector-Emitter Voltage
Q 0.10 MAX
N N
_
R 12.50 + 0.50
VEBO
Emitter-Base Voltage -6 V
1. EMITTER
S 1.00
2. COLLECTOR
IC
Collector Current -1 A
3. BASE
IB
Base Current -0.5 A
PC
Collector Power Dissipation 1 W
TO-92L
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST |
4.4. kta1271a.pdf Size:47K _kec  |
 | SEMICONDUCTOR KTA1271A
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
B C
·High hFE : hFE=100?320.
·Complementary to KTC3203A.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
MAXIMUM RATING (Ta=25?)
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
G 0.85
VCBO -35 V
Collector-Base Voltage
H 0.45
_
H
J 14.00 + 0.50
VCEO -30 V
Collector-Emitter Voltage
K 0.55 MAX
F F
L 2.30
VEBO
Emitter-Base Voltage -5 V
M 0.45 MAX
N 1.00
IC
Collector Current -800 mA
1 2 3
1. EMITTER
IE
Emitter Current 800 mA
2. COLLECTOR
3. BASE
PC
Collector Power Dissipation 400 mW
Tj
Junction Temperature 150
?
TO-92 (F)
Tstg -55?150 ?
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25?)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-35V, IE=0
Collector Cut-off Current - - -100 nA
IEBO VEB=-5V, IC=0
Emitter Cut-off Current - - -100 nA
V(BR)CEO IC=-10mA, IB=0
Collector-Emitter Br |
4.5. kta1271.pdf Size:69K _kec  |
 | SEMICONDUCTOR KTA1271
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
B C
FEATURES
High hFE : hFE=100 320.
Complementary to KTC3203.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
MAXIMUM RATING (Ta=25 )
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT
F 1.27
G 0.85
VCBO -35 V
Collector-Base Voltage H 0.45
_
H
J 14.00 + 0.50
K 0.55 MAX
VCEO -30 V
Collector-Emitter Voltage F F
L 2.30
M 0.45 MAX
VEBO
Emitter-Base Voltage -5 V
N 1.00
1 2 3
IC
Collector Current -800 mA
1. EMITTER
IE
Emitter Current 800 mA
2. COLLECTOR
3. BASE
PC
Collector Power Dissipation 625 mW
Tj
Junction Temperature 150
TO-92
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-35V, IE=0
Collector Cut-off Current - - -100 nA
IEBO VEB=-5V, IC=0
Emitter Cut-off Current - - -100 nA
V(BR)CEO IC=-10mA, IB=0
Collector-Emitter Breakdown Vo |
4.6. kta1279.pdf Size:35K _kec  |
 | SEMICONDUCTOR KTA1279
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B C
MAXIMUM RATING (Ta=25 )
N DIM MILLIMETERS
CHARACTERISTIC SYMBOL RATING UNIT
A 4.70 MAX
E
K
B 4.80 MAX
G
VCBO -300 V
Collector-Base Voltage
C 3.70 MAX
D
D 0.45
VCEO -300 V
Collector-Emitter Voltage E 1.00
F 1.27
G 0.85
VEBO -5.0 V
Emitter-Base Voltage
H 0.45
_
H
J 14.00 + 0.50
IC
Collector Current -500 mA
K 0.55 MAX
F F
L 2.30
IE
Emitter Current 500 mA
M 0.45 MAX
N 1.00
PC
Collector Power Dissipation 625 mW
1 2 3
Tj
Junction Temperature 150
1. EMITTER
2. COLLECTOR
Tstg -55 150 3. BASE
Storage Temperature
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
V(BR)CBO
Collector Cut-off Current IC=-100 A, IE=0 -300 - - V
V(BR)CEO IC=-1.0mA, IB=0
Emitter Cut-off Current -300 - - V
IC=-1.0mA, VCE=-10V
25 - -
hFE * IC=-10mA, VCE=-10V
DC Current Gain 40 - -
IC=-30mA, VCE=- |
4.7. kta1273.pdf Size:77K _kec  |
 | SEMICONDUCTOR KTA1273
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
B D
FEATURES
Complementary to KTC3205.
DIM MILLIMETERS
P
DEPTH:0.2
A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
S
MAXIMUM RATING (Ta=25 )
D 2.50 MAX
Q
E 1.15 MAX
K
CHARACTERISTIC SYMBOL RATING UNIT
F 1.27
G 1.70 MAX
VCBO -30 V
H 0.55 MAX
Collector-Base Voltage FF
_
J 14.00 + 0.50
K 0.35 MIN
VCEO -30 V
Collector-Emitter Voltage
HH H
_
L 0.75 + 0.10
E M 4
M
VEBO
Emitter-Base Voltage -5 V
N 25
O 1.25
IC
Collector Current -2 A
L
1 2 3
H
P ?1.50
Q 0.10 MAX
IE N N
Emitter Current 2 A
_
R 12.50 + 0.50
1. EMITTER
S 1.00
PC
Collector Power Dissipation 1 W
2. COLLECTOR
3. BASE
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-30V, IE=0
Collector Cut-off Current - - -100 nA
IEBO VEB=-5V, IC=0
Emitter Cut-off Current |
4.8. kta1274.pdf Size:65K _kec  |
 | SEMICONDUCTOR KTA1274
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
B D
FEATURES
Complementary to KTC3227.
DIM MILLIMETERS
P
DEPTH:0.2
A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
S
MAXIMUM RATING (Ta=25 )
D 2.50 MAX
Q
E 1.15 MAX
K
CHARACTERISTIC SYMBOL RATING UNIT
F 1.27
G 1.70 MAX
VCBO -80 V
Collector-Base Voltage H 0.55 MAX
FF
_
J 14.00 + 0.50
K 0.35 MIN
VCEO -80 V
Collector-Emitter Voltage
HH H
_
L 0.75 + 0.10
E M 4
VEBO
Emitter-Base Voltage -5 V M
N 25
O 1.25
IC
Collector Current -400 mA
L
1 2 3
H
P ?1.50
Q 0.10 MAX
IE
Emitter Current 400 mA N N
_
R 12.50 + 0.50
1. EMITTER
S 1.00
PC
Collector Power Dissipation 1 W
2. COLLECTOR
3. BASE
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-50V, IE=0
Collector Cut-off Current - - -100 nA
IEBO VEB=-5V, IC=0
Emitter-Cut-off |
4.9. kta1273.pdf Size:299K _htsemi  |
 | KTA1273
TRANSISTOR (PNP)
SOT-89-3L
FEATURES
1. BASE
High Current
Low Voltage
2. COLLECTOR
Complementary to KTC3205
3. EMITTER
MAXIMUM RATINGS (Ta=25? unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -2 A
PC Collector Power Dissipation 500 mW
R?JA Thermal Resistance From Junction To Ambient 250 ?/W
Tj Junction Temperature 150 ?
Tstg Storage Temperature -55~+150 ?
ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA
DC current gain hFE VCE=-2V, IC=-0.5A 100 320
Collector-e |
4.10. kta1270.pdf Size:256K _lge  |
 | KTA1270(PNP)
TO-92 Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Geenral purpose application switching application
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -35 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -5 V
Dimensions in inches and (millimeters)
IC Collector Current –Continuous -0.5 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100ВµA, IE=0 -35 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100ВµA, IC=0 -5 V
Collector cut-off current ICBO VCB= -35 V , IE=0 -0.1 ВµA
Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 ВµA
hFE1 VCE=-1 V, IC= -10 |
4.11. kta1273_to-92l.pdf Size:198K _lge  |
 | KTA1273
TO-92L Transistor (PNP)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
2 3
4.700
1
5.100
Features
Complementary to KTC3205.
7.800
8.200
MAXIMUM RATINGS (TA=25? unless otherwise noted)
0.600
0.800
Symbol Parameter Value Units
0.350
VCBO Collector-Base Voltage -30 V
0.550
13.800
VCEO Collector-Emitter Voltage -30 V 14.200
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -2 A
1.270 TYP
PC Collector Power Dissipation 1 W
2.440
2.640
TJ Junction Temperature 150 ?
0.000
1.600
Tstg Storage Temperature -55-150 ?
0.300
Dimensions in inches and (millimeters)
0.350
0.450
3.700
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
4.100
1.280
1.580
Parameter Symbol Test conditions MIN TYP MAX UNIT
4.000
Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V
Collector cut-of |
See also transistors datasheet: KTA1241
, KTA1266
, KTA1266L
, KTA1267
, KTA1267L
, KTA1268
, KTA1270
, KTA1271
, BF194
, KTA1273
, KTA1274
, KTA1275
, KTA1276
, KTA1277
, KTA1281
, KTA1298
, KTA1504
. Keywords| KTA1272
Datasheet | KTA1272
Datenblatt | KTA1272
RoHS | KTA1272
Distributor | | KTA1272
Application Notes | KTA1272
Component | KTA1272
Circuit | KTA1272
Schematic | | KTA1272
Equivalent | KTA1272
Cross Reference | KTA1272
Data Sheet | KTA1272
Fiche Technique |
|
