KTB1424 Transistor Datasheet. Parameters and Characteristics.

Type Designator: KTB1424

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 3000

Noise Figure, dB: -

Package of KTB1424 transistor: ISO220

KTB1424 Equivalent Transistors - Cross-Reference Search

KTB1424 PDF document for downloads:

1.1. ktb1424.pdf Size:427K _kec

SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A C FEATURES DIM MILLIMETERS S High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) _ A 10.0 0.3 + _ + B 15.0 0.3 Complementary to KTD2424. E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ 13.6 0.5 J + L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.2 + L 1.2+0.25/-0.1 CHARACTERISTIC SYMBOL RATING UNIT M 1.5+0.25/-0.1 M D D _ N 2.54 0.1 + VCBO -80 V Collector-Base Voltage _ P 6.8 0.1 + _ Q 4.5 0.2 + VCEO -60 V Collector-Emitter Voltage _ + R 2.6 0.2 N N H S 0.5 Typ VEBO -10 V Emitter-Base Voltage IC Collector Current -3 A 1. BASE IB Base Current -0.5 A 1 2 3 2. COLLECTOR PC 25 W Collector Power Dissipation (Tc=25 ) 3. EMITTER Tj Junction Temperature 150 TO-220IS Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBO

4.1. ktb1423.pdf Size:443K _kec

SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 FEATURES E C _ 2.70 0.3 + D High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. 0.76+0.09/-0.05 _ E ?3.2 0.2 + High Collector Breakdown Voltage : VCEO=-120V (Min.) _ F 3.0 0.3 + _ 12.0 0.3 G + Complementary to KTD1413. H 0.5+0.1/-0.05 _ 13.6 0.5 J + L L R K _ 3.7 0.2 + L 1.2+0.25/-0.1 M 1.5+0.25/-0.1 M D D _ N 2.54 0.1 + _ P 6.8 0.1 + MAXIMUM RATING (Ta=25 ) _ Q 4.5 0.2 + _ + R 2.6 0.2 CHARACTERISTIC SYMBOL RATING UNIT N N H S 0.5 Typ VCBO -120 V Collector-Base Voltage VCEO -120 V Collector-Emitter Voltage 1. BASE 1 2 3 VEB0 Emitter-Base Voltage -5 V 2. COLLECTOR 3. EMITTER IC DC -5 Collector Current A ICP Pules -8 TO-220IS IB Base Current -0.12 A Collector Power Dissipation PC 30 W (Tc=25 ) Tj Junction Tem

See also transistors datasheet: KTA968 , KTA968A , KTB1366 , KTB1367 , KTB1368 , KTB1369 , KTB1370 , KTB1423 , BC548 , KTB2955 , KTB595 , KTB688 , KTB778 , KTB817 , KTB988 , KTB989 , KTC1001 .

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