KTC3198A Transistor Datasheet. Parameters and Characteristics.

Type Designator: KTC3198A

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.15

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of KTC3198A transistor: TO92

KTC3198A Equivalent Transistors - Cross-Reference Search

KTC3198A PDF document for downloads:

1.1. ktc3198a.pdf Size:66K _kec

SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX ·Low Noise : NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G ·Complementary to KTA1266A. C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 MAXIMUM RATING (Ta=25?) K 0.55 MAX F F L 2.30 CHARACTERISTIC SYMBOL RATING UNIT M 0.45 MAX N 1.00 1 2 3 VCBO Collector-Base Voltage 60 V 1. EMITTER VCEO Collector-Emitter Voltage 50 V 2. COLLECTOR 3. BASE VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA TO-92 (F) IB Base Current 50 mA PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=60V, IE=0 Col

3.1. ktc3198.pdf Size:244K _secos

KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF. Min. Max. Min. Max. Base A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1.10 1.40 1 D 3.30 3.81 J 2.42 2.66 Emitter E 0.36 0.56 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector Current I 150 mA CM Power Dissipation P 625 mW CM Junction, Storage Temperature T , T 125, -55~125 °C J STG ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=100µA, IE=0 Collector to

3.2. ktc3198l.pdf Size:29K _kec

SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. B C FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise : NF=0.2dB(Typ.). f=(1kHz). A 4.70 MAX E K B 4.80 MAX Complementary to KTA1266L. (O,Y,GR class) G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25 ) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V 1. EMITTER 2. COLLECTOR VEBO Emitter-Base Voltage 5 V 3. BASE IC Collector Current 150 mA IE Emitter Current -150 mA TO-92 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=60V, IE=0 Collector Cut-off Cur

3.3. ktc3198.pdf Size:432K _kec

SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA N DIM MILLIMETERS : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). A 4.70 MAX E K B 4.80 MAX Low Noise : NF=1dB(Typ.). at f=1kHz. G C 3.70 MAX D Complementary to KTA1266. D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 K 0.55 MAX F F MAXIMUM RATING (Ta=25 ) L 2.30 M 0.45 MAX CHARACTERISTIC SYMBOL RATING UNIT N 1.00 1 2 3 VCBO Collector-Base Voltage 60 V 1. EMITTER VCEO 2. COLLECTOR Collector-Emitter Voltage 50 V 3. BASE VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA TO-92 IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=60V, IE=0 Collector Cut-off Cur

See also transistors datasheet: KTC3190 , KTC3191 , KTC3192 , KTC3193 , KTC3194 , KTC3195 , KTC3197 , KTC3198 , TIP41C , KTC3198L , KTC3199 , KTC3199L , KTC3200 , KTC3202 , KTC3203 , KTC3204 , KTC3205 .

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