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KTC3203
Transistor Datasheet. Parameters and Characteristics. Type Designator: KTC3203
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.625
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: - Package of KTC3203
transistor: TO92
KTC3203
Equivalent Transistors - Cross-Reference Search KTC3203
PDF document for downloads:
1.1. ktc3203a.pdf  Size:48K _kec  |
 | SEMICONDUCTOR KTC3203A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
B C
·Complementary to KTA1271A
N DIM MILLIMETERS
A 4.70 MAX
MAXIMUM RATING (Ta=25?) E
K
B 4.80 MAX
G
C 3.70 MAX
CHARACTERISTIC SYMBOL RATING UNIT D
D 0.45
E 1.00
VCBO
Collector-Base Voltage 35 V
F 1.27
G 0.85
VCEO
Collector-Emitter Voltage 30 V
H 0.45
_
H
J 14.00 + 0.50
VEBO
Emitter-Base Voltage 5 V
K 0.55 MAX
F F
L 2.30
IC
Collector Current 800 mA M 0.45 MAX
N 1.00
1 2 3
IE
Emitter Current -800 mA
1. EMITTER
PC
Collector Power Dissipation 400 mW
2. COLLECTOR
3. BASE
Tj
Junction Temperature 150
?
Topr -40?85 ?
Operating Temperature
TO-92 (F)
Tstg -55?150 ?
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25?)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=35V, IE=0
Collector Cut-off Current - - 100 nA
IEBO VEB=5V, IC=0
Emitter Cut-off Current - - 100 nA
V(BR)CEO IC=10mA, IB=0
Collector-Emitter Br |
1.2. ktc3203.pdf Size:250K _lge  |
 | KTC3203(NPN)
TO-92 Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Complementary to KTA1271
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 800 mA
PC 625 mW
Collector Power Dissipation
Dimensions in inches and (millimeters)
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 V
Collector cut-off current ICBO VCB= 35V , IE=0 0.1 ?A
Collector cut-off current ICEO VCE= 25V , IB=0 0.2 ?A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A
hFE(1) VCE=1V, IC= 10 |
4.1. ktc3206.pdf Size:804K _kec  |
 | SEMICONDUCTOR KTC3206
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
BLACK AND WHITE TV VIDEO OUTPUT APLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
B D
FEATURES
High Breakdown Voltage : VCEO=150V(Min.).
DIM MILLIMETERS
P
Low Output Capacitance : Cob=5.0pF(Max.).
DEPTH:0.2
A 7.20 MAX
High Transition Frequency : fT=120MHz(Typ.). B 5.20 MAX
C
C 0.60 MAX
S
D 2.50 MAX
Q
E 1.15 MAX
K
F 1.27
G 1.70 MAX
H 0.55 MAX
FF
_
MAXIMUM RATING (Ta=25 ) J 14.00 + 0.50
K 0.35 MIN
HH H
_
CHARACTERISTIC SYMBOL RATING UNIT L 0.75 + 0.10
E M 4
M
VCBO
Collector-Base Voltage 200 V N 25
O 1.25
L
1 2 3
H
VCEO P ?1.50
Collector-Emitter Voltage 150 V
Q 0.10 MAX
N N
_
R 12.50 + 0.50
VEBO
Emitter-Base Voltage 5 V
1. EMITTER
S 1.00
2. COLLECTOR
IC
Collector Current 50 mA
3. BASE
IE
Emitter Current -50 mA
IB
Base Current 5 mA
TO-92L
PC
Collector Power Dissipation 1 W
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERIS |
4.2. ktc3209.pdf Size:897K _kec  |
 | SEMICONDUCTOR KTC3209
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=0.5V(Max.) (IC=1A)
High Speed Switching Time : tstg=1.0 S(Typ.)
Complementary to KTA1281.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage 50 V
VCEO
Collector-Emitter Voltage 50 V
VEBO
Emitter-Base Voltage 5 V
IC
Collector Current 2 A
IE
Emitter Current -2 A
PC
Collector Power Dissipation 1 W
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=50V, IE=0
Collector Cut-off Current - - 0.1
A
IEBO VEB=5V, IC=0
Emitter Cut-off Current - - 0.1
A
V(BR)CEO IC=10mA, IB=0
Collector-Emitter Breakdown Voltage 50 - - V
V(BR)EBO IE=100mA, IB=0
Emitter-Base Breakdown Voltage 5 - - V
hFE (1) (Note) VCE=2V, IC=0.5A (Note)
70 - 240
|
4.3. ktc3207t.pdf Size:403K _kec  |
 | SEMICONDUCTOR KTC3207T
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE SWITCHING APPLICATION.
COLOR TV HORIZONTAL DRIVER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATION.
E
B
K
DIM MILLIMETERS
FEATURES
_
A 2.9 + 0.2
B 1.6+0.2/-0.1
High Voltage : V(BR)CEO=300V
_
C 0.70 + 0.05
2
3
Small Collector Output Capacitance : Cob=3.0pF(Typ.) _
D 0.4 + 0.1
E 2.8+0.2/-0.3
Complementary to KTA1073T.
_
F 1.9 + 0.2
1
G 0.95
_
H 0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
L 0.55
MAXIMUM RATINGS (Ta=25 )
H
CHARACTERISTIC SYMBOL RATING UNIT J J
VCBO
Collector-Base Voltage 300 V
1. EMITTER
2. BASE
VCEO
Collector-Emitter Voltage 300 V
3. COLLECTOR
VEBO
Emitter-Base Voltage 6 V
IC
Collector Current 100 mA
IB
Base Current 50 mA
TSM
PC *
Collector Power Dissipation 0.9 W
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
* Package mounted on a ceramic board (600 0.8 )
Marking
hFE Rank
Lot No.
Type Name
LX
ELECTRICAL CH |
4.4. ktc3207.pdf Size:459K _kec  |
 | SEMICONDUCTOR KTC3207
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE SWITCHING APPLICATION.
COLOR TV HORIZONTAL DIRVER APPLICATION.
B D
COLOR TV CHROMA OUTPUT APPLICATION.
FEATURES
DIM MILLIMETERS
P
High Voltage : V(BR)CEO=300V.
DEPTH:0.2
A 7.20 MAX
Small Collector Output Capacitance : Cob=3.0pF(Typ.). B 5.20 MAX
C
C 0.60 MAX
S
D 2.50 MAX
Q
E 1.15 MAX
K
F 1.27
G 1.70 MAX
H 0.55 MAX
FF
_
MAXIMUM RATING (Ta=25 ) J 14.00 + 0.50
K 0.35 MIN
HH H
_
CHARACTERISTIC SYMBOL RATING UNIT L 0.75 + 0.10
E M 4
M
VCBO N 25
Collector-Base Voltage 300 V
O 1.25
L
1 2 3
H
VCEO P ?1.50
Collector-Emitter Voltage 300 V
Q 0.10 MAX
N N
_
R 12.50 + 0.50
VEBO
Emitter-Base Voltage 7 V
1. EMITTER
S 1.00
2. COLLECTOR
IC
Collector Current 100 mA
3. BASE
IB
Base Current 50 mA
PC
Collector Power Dissipation 1 W
TO-92L
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TES |
4.5. ktc3202.pdf Size:233K _kec  |
 | SEMICONDUCTOR KTC3202
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
: hFE(2)=25(Min.) at VCE=6V, IC=400mA.
N DIM MILLIMETERS
Complementary to KTA1270.
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.27
G 0.85
MAXIMUM RATING (Ta=25 )
H 0.45
_
H
J 14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT
K 0.55 MAX
F F
2.30
L
VCBO
Collector-Base Voltage 35 V
M 0.30 +0.10
- 0.05
N 1.00
VCEO
Collector-Emitter Voltage 30 V 1 2 3
VEBO
Emitter-Base Voltage 5 V 1. EMITTER
2. COLLECTOR
IC
Collector Current 500 mA 3. BASE
IE
Base Current -500 mA
PC
Collector Power Dissipation 625 mW
TO-92
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=35V, IE=0
Collector Cut-off Current - - 0.1
A
IEBO VEB=5V, IC=0
Emitter Cut-off Current - - 0.1 |
4.6. ktc3205.pdf Size:78K _kec  |
 | SEMICONDUCTOR KTC3205
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
B D
FEATURES
Complementary to KTA1273.
DIM MILLIMETERS
P
DEPTH:0.2
A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
S
MAXIMUM RATING (Ta=25 )
D 2.50 MAX
Q
E 1.15 MAX
K
CHARACTERISTIC SYMBOL RATING UNIT
F 1.27
G 1.70 MAX
VCBO
Collector-Base Voltage 30 V H 0.55 MAX
FF
_
J 14.00 + 0.50
VCEO K 0.35 MIN
Collector-Emitter Voltage 30 V
HH H
_
L 0.75 + 0.10
E M 4
VEBO
Emitter-Base Voltage 5 V M
N 25
O 1.25
IC
Collector Current 2 A
L
1 2 3
H
P ?1.50
Q 0.10 MAX
IE
Emitter Current -2 A N N
_
R 12.50 + 0.50
1. EMITTER
S 1.00
PC
Collector Power Dissipation 1 W
2. COLLECTOR
3. BASE
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=30V, IE=0
Collector Cut-off Current - - 100 nA
IEBO VEB=5V, IC=0
Emitter Cut-off Current - - 100 |
4.7. ktc3204.pdf Size:22K _kec  |
 | SEMICONDUCTOR KTC3204
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
B
·Complementary to KTA1272.
DIM MILLIMETERS
O
A 3.20 MAX
H
M B 4.30 MAX
C 0.55 MAX
MAXIMUM RATING (Ta=25?)
_
D 2.40 + 0.15
E 1.27
CHARACTERISTIC SYMBOL RATING UNIT
F 2.30
C
_
+
G 14.00 0.50
VCBO
Collector-Base Voltage 35 V
H 0.60 MAX
J 1.05
E E
VCEO
Collector-Emitter Voltage 30 V
K 1.45
L 25
VEBO
Emitter-Base Voltage 5 V
M 0.80
N 0.55 MAX
3
1 2 N
IC
Collector Current 800 mA O 0.75
L
IE
Emitter Current -800 mA
1. EMITTER
2. COLLECTOR
PC
Collector Power Dissipation 400 mW
3. BASE
Tj
Junction Temperature 150
?
Tstg -55?150 ?
Storage Temperature Range
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25?)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=30V, IE=0
Collector Cut-off Current - - 100 nA
IEBO VEB=5V, IC=0
Emitter Cut-off Current - - 100 nA
V(BR)CEO IC=10mA, IB=0
Collector-Emitter Breakdown Voltage 30 - - V
|
4.8. ktc3200.pdf Size:54K _kec  |
 | SEMICONDUCTOR KTC3200
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AUDIO AMPLIFIER APPLICATION.
B C
FEATURES
The KTC3200 is a transistor for low frequency and low noise applications.
This device is designed to ower noise figure in the region of low signal
source impedance, and to lower the pulse noise.
N DIM MILLIMETERS
This is recommended for the first stages of equalizer amplifiers.
A 4.70 MAX
E
K
B 4.80 MAX
Low Noise G
C 3.70 MAX
D
: NF=4dB(Typ.), Rg=100 , VCE=6V, IC=100 A, f=1kHz
D 0.45
E 1.00
: NF=0.5dB(Typ.), Rg=1k , VCE=6V, IC=100 A, f=1kHz.
F 1.27
G 0.85
Low Pulse Noise : Low 1/f Noise.
H 0.45
_
High DC Current Gain : hFE=200 700. H
J 14.00 + 0.50
K 0.55 MAX
F F
High Breakdown Voltage : VCEO=120V .
L 2.30
M 0.45 MAX
Complementary to KTA1268.
N 1.00
1 2 3
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TO-92
VCBO
Collector-Base Voltage 120 V
VCEO
Collector-Emitter Voltage 120 V
V |
4.9. ktc3205.pdf Size:444K _htsemi  |
 | KTC3205
TRANSISTOR (NPN)
TO-92L
1. EMITTER
FEATURES
2. COLLECTOR
Complementary to KTA1273
3. BASE
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
1 2 3
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1mA , IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V
Collector cut-off current ICBO VCB= 30V, IE=0 0.1 µA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA
DC current gain hFE VCE= 2 V, IC= 500 mA 100 320
Collector-emitter saturation voltage VCE (sat) IC= 1.5A, IB= 30 mA 2.0 V
Bas |
4.10. ktc3206.pdf Size:194K _lge  |
 | KTC3206
TO-92L Transistor (NPN)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
4.700
5.100
2 3
1
Features
7.800
High Breakdown Voltage : VCEO=150V(Min.)
8.200
Low Output Capacitance : Cob=5.0pF(Max.)
0.600
High Transition Frequency : fT=120MHz(Typ.).
0.800
0.350
0.550
MAXIMUM RATINGS (TA=25? unless otherwise noted)
13.800
14.200
Symbol Value Units
Parameter
200 V
VCBO Collector-Base Voltage
150 V
VCEO Collector-Emitter Voltage
1.270 TYP
2.440
VEBO 5 V
Emitter-Base Voltage
2.640
IC Collector Current -Continuous 50 mA
0.000
1.600
0.300
PC Collector Power Dissipation 1 W
0.350
0.450
Tj Junction Temperature 150 ?
3.700
4.100
1.280
Dimensions in inches and (millimeters)
Tstg Storage Temperature Range -55-150 ?
1.580
4.000
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100ВµA , IE=0 200 V
Collector-emitter |
4.11. ktc3202.pdf Size:197K _lge  |
 | KTC3202(NPN)
TO-92 Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
General purpose application switching application
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Parameter
Symbol Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC 625 mW
Collector Power Dissipation
Dimensions in inches and (millimeters)
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-BASE breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 V
Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A
hFE(1) VCE= 1V, IC= 100mA 70 400
DC current gain
hFE(2) |
4.12. ktc3205_to-92l.pdf Size:199K _lge  |
 | KTC3205
TO-92L Transistor (NPN)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
4.700
2 3
5.100
1
Features
7.800
8.200
Complementary to KTA1273
0.600
0.800
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units 0.350
0.550
13.800
VCBO Collector-Base Voltage 30 V
14.200
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 2 A 1.270 TYP
2.440
PC Collector Power Dissipation 1 W
2.640
0.000
TJ Junction Temperature 150 ?
1.600
0.300
Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150 ?
0.350
0.450
3.700
4.100
1.280
1.
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 580
4.000
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1mA , IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V
Collector cut-off current I |
See also transistors datasheet: KTC3197
, KTC3198
, KTC3198A
, KTC3198L
, KTC3199
, KTC3199L
, KTC3200
, KTC3202
, BC109C
, KTC3204
, KTC3205
, KTC3206
, KTC3208
, KTC3226
, KTC3227
, KTC3228
, KTC3229
. Keywords| KTC3203
Datasheet | KTC3203
Datenblatt | KTC3203
RoHS | KTC3203
Distributor | | KTC3203
Application Notes | KTC3203
Component | KTC3203
Circuit | KTC3203
Schematic | | KTC3203
Equivalent | KTC3203
Cross Reference | KTC3203
Data Sheet | KTC3203
Fiche Technique |
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