KTC9016 Transistor Datasheet. Parameters and Characteristics.

Type Designator: KTC9016

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.02

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of KTC9016 transistor: TO92

KTC9016 Equivalent Transistors - Cross-Reference Search

KTC9016 PDF document for downloads:

1.1. ktc9016.pdf Size:27K _kec

SEMICONDUCTOR KTC9016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURES Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). N DIM MILLIMETERS Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VCBO Collector-Base Voltage 40 V M 0.45 MAX N 1.00 VCEO Collector-Emitter Voltage 30 V 1 2 3 VEBO Emitter-Base Voltage 4 V 1. EMITTER 2. BASE IC Collector Current 20 mA 3. COLLECTOR IE Emitter Current -20 mA PC Collector Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=40V, IE=0 Collector Cut-off Current - - 0.1 A IEBO VEB=4V, IC=0

1.2. ktc9016s.pdf Size:402K _kec

SEMICONDUCTOR KTC9016S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Small Reverse Transfer Capacitance _ A 2.93 0.20 + B 1.30+0.20/-0.15 : Cre=0.65pF(Typ.). C 1.30 MAX 2 Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P MAXIMUM RATING (Ta=25 ) M 0.20 MIN N 1.00+0.20/-0.10 CHARACTERISTIC SYMBOL RATING UNIT P 7 VCBO Collector-Base Voltage 40 V M VCEO Collector-Emitter Voltage 30 V 1. EMITTER VEBO Emitter-Base Voltage 4 V 2. BASE 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA PC * Collector Power Dissipation 350 mW SOT-23 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BF ELECTRICAL CHARACTERISTICS (Ta=

4.1. ktc9015s.pdf Size:396K _kec

SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.93 0.20 + B 1.30+0.20/-0.15 : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). C 1.30 MAX 2 Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Complementary to KTC9014S. 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO -50 V Collector-Base Voltage 1. EMITTER VCEO -50 V Collector-Emitter Voltage 2. BASE VEBO Emitter-Base Voltage -5 V 3. COLLECTOR IC Collector Current -150 mA IE Emitter Current 150 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BE ELECTRICAL CHARACTERISTICS (T

4.2. ktc9012s.pdf Size:395K _kec

SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9013S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P M 0.20 MIN CHARACTERISTIC SYMBOL RATING UNIT N 1.00+0.20/-0.10 P 7 VCBO -40 V Collector-Base Voltage M VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V 1. EMITTER IC Collector Current -500 mA 2. BASE 3. COLLECTOR IE Emitter Current 500 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BB ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35

4.3. ktc9013.pdf Size:46K _kec

SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9012. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 40 V K 0.55 MAX F F L 2.30 VCEO Collector-Emitter Voltage 30 V M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR IE Emitter Current -500 mA 625 PC* Collector Power Dissipation mW 400 TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 0.1 ? A IEBO VEB=5V, IC=0 Emitter Cut

4.4. ktc9018.pdf Size:34K _kec

SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES ·Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). N DIM MILLIMETERS ·Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. A 4.70 MAX E K B 4.80 MAX ·High Transition Frequency : fT=800MHz(Typ.). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 40 V 1 2 3 VCEO Collector-Emitter Voltage 30 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA TO-92 625 PC* Collector Power Dissipation mW 400 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST

4.5. ktc9015.pdf Size:27K _kec

SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9014. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25 ) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX N 1.00 VCBO -50 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage 1. EMITTER 2. BASE VEBO Emitter-Base Voltage -5 V 3. COLLECTOR IC Collector Current -150 mA IE Emitter Current 150 mA TO-92 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-50V, IE=0 Collector Cut-off Current - - -50 nA IEBO VEB=-5V, IC

4.6. ktc9015a.pdf Size:344K _kec

SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9014A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage -50 V 1 2 3 VCEO Collector-Emitter Voltage -50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage -5 V 3. COLLECTOR IC Collector Current -150 mA IE Emitter Current 150 mA TO-92 (F) PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-50V, IE=0 Collector Cut-off Current - - -50 nA

4.7. ktc9018s.pdf Size:402K _kec

SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Small Reverse Transfer Capacitance _ A 2.93 0.20 + B 1.30+0.20/-0.15 : Cre=0.65pF(Typ.). C 1.30 MAX 2 Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High Transition Frequency : fT=800MHz(Typ.). 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO Collector-Base Voltage 40 V 1. EMITTER VCEO Collector-Emitter Voltage 30 V 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Ty

4.8. ktc9014a.pdf Size:343K _kec

SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 5V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA TO-92 (F) PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 50 nA IEBO VEB

4.9. ktc9011s.pdf Size:400K _kec

SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 ~ 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.55 P P M 0.20 MIN VCBO Collector-Base Voltage 35 V N 1.00+0.20/-0.10 P 7 VCEO Collector-Emitter Voltage 30 V M VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA 1. EMITTER 2. BASE IE Emitter Current -50 mA 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=

4.10. ktc9013s.pdf Size:395K _kec

SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9012S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P M 0.20 MIN CHARACTERISTIC SYMBOL RATING UNIT N 1.00+0.20/-0.10 P 7 VCBO Collector-Base Voltage 40 V M VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR IE Emitter Current -500 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, I

4.11. ktc9014.pdf Size:349K _kec

SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA TO-92 (F) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 50 nA IEBO VEB=

4.12. ktc9014s.pdf Size:396K _kec

SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.93 0.20 + B 1.30+0.20/-0.15 : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). C 1.30 MAX 2 Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Complementary to KTC9015S. 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO Collector-Base Voltage 60 V 1. EMITTER VCEO Collector-Emitter Voltage 50 V 2. BASE VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BD ELECTRICAL CHARACTERISTICS (Ta=25

4.13. ktc9011.pdf Size:26K _kec

SEMICONDUCTOR KTC9011 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0.45 _ H J 14.00 + 0.50 VCEO K 0.55 MAX Collector-Emitter Voltage 30 V F F L 2.30 M 0.45 MAX VEBO Emitter-Base Voltage 5 V N 1.00 1 2 3 IC Collector Current 50 mA 1. EMITTER IE Emitter Current -50 mA 2. BASE 3. COLLECTOR PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 0.1 A IEBO VEB=4V, IC=0 Emitter Cut-off Current - - 0.1 A hFE (Note) VCE=5V, IC=1mA DC Current

4.14. ktc9012.pdf Size:46K _kec

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40 V Collector-Base Voltage K 0.55 MAX F F L 2.30 VCEO -30 V Collector-Emitter Voltage M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage -5 V 1. EMITTER IC Collector Current -500 mA 2. BASE 3. COLLECTOR IE Emitter Current 500 mA 625 PC* Collector Power Dissipation mW 400 TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -0.1 ? A IEBO VEB=-5V, IC=0 Emitt

See also transistors datasheet: KTC4419 , KTC8050 , KTC8550 , KTC9011 , KTC9012 , KTC9013 , KTC9014 , KTC9015 , BU808DFI , KTC9018 , KTD1003A , KTD1003B , KTD1003C , KTD1028 , KTD1047 , KTD1145 , KTD1146 .

Keywords