KTD1028 Transistor Datasheet. Parameters and Characteristics.

Type Designator: KTD1028

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 800

Noise Figure, dB: -

Package of KTD1028 transistor:

KTD1028 Equivalent Transistors - Cross-Reference Search

KTD1028 PDF document for downloads:

1.1. ktd1028.pdf Size:307K _kec

SEMICONDUCTOR KTD1028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 8 V IC Collector Current 1.0 A IB Base Current 200 mA PC Collector Power Dissipation 1 W Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=60V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=8V, IC=0 Emitter Cut-off Current - - 100 nA hFE(1) (Note) VCE=5.0V, IC=300mA 800 1500 3200 DC Current Gain hFE(2) VCE=5.0V, IC=1.0A 400 - - VCE(sat) IC=500mA, IB=5.0mA Collector-Emitter Saturration Voltage - 0.17 0.30 V VBE(s

5.1. ktd1003.pdf Size:74K _kec

SEMICONDUCTOR KTD1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C High DC Current Gain H : hFE=800 3200. (VCE=5.0V, IC=300mA). G Wide Area of Safe Operation. Low Collector Saturation Voltage DIM MILLIMETERS : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP MAXIMUM RATING (Ta=25 ) H 1.75 MAX 1 2 3 J 0.75 MIN CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05 VCBO Collector-Base Voltage 60 V 1. BASE VCEO Collector-Emitter Voltage 50 V 2. COLLECTOR (HEAT SINK) 3. EMITTER VEBO Emitter-Base Voltage 8 V IC Collector Current 1.0 A PC 500 mW SOT-89 Collector Power Dissipation PC * 1 W Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2 PC* : KTD1003 Mounted on Ceramic Substrate (250mm x0.8t) Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC

5.2. ktd1047.pdf Size:72K _kec

SEMICONDUCTOR KTD1047 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to KTB817. Recommended for 60W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATING UNIT I 4.5 P PT J 2.0 M VCBO Collector-Base Voltage 160 V K 1.8 MAX _ + L 20.5 0.5 VCEO M 2.8 Collector-Emitter Voltage 140 V _ P 5.45 + 0.2 1 2 3 _ ?3.2 0.2 Q + VEBO Emitter-Base Voltage 6 V T 0.6+0.3/-0.1 1. BASE IC DC 12 2. COLLECTOR (HEAT SINK) Collector Current A ICP Pulse 15 3. EMITTER PC 100 W Collector Power Dissipation (Tc=25 ) Tj Junction Temperature 150 TO-3P(N) Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=80V, IE=0 Collector Cut-off Current - -

5.3. ktd1047b.pdf Size:365K _kec

SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A FEATURES Q B N O K ·Complementary to KTB817B. DIM MILLIMETERS ·Recommended for 60W Audio Frequency _ A + 15.60 0.20 _ B 4.80 + 0.20 Amplifier Output Stage. _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 _ G 3.50 + 0.20 D _ H 13.90 0.20 + MAXIMUM RATING (Ta=25?) _ E I 12.76 + 0.20 _ J 23.40 + 0.20 CHARACTERISTIC SYMBOL RATING UNIT M d K 1.5+0.15-0.05 _ L 16.50 + 0.30 VCBO Collector-Base Voltage 160 V _ M 1.40 + 0.20 _ N 13.60 + 0.20 P P T VCEO Collector-Emitter Voltage 140 V _ O 9.60 + 0.20 _ P 5.45 + 0.30 VEBO Emitter-Base Voltage 6 V _ Q 3.20 + 0.10 1 2 3 _ R 18.70 + 0.20 IC DC 12 T 0.60+0.15-0.05 Collector Current A 1. BASE ICP Pulse 15 2. COLLECTOR (HEAT SINK) 3. EMITTER PC 100 W Collector Power Dissipation (Tc=25?) Tj Junction Temperature 150 ? TO-3P(N)-E Tstg -5

See also transistors datasheet: KTC9013 , KTC9014 , KTC9015 , KTC9016 , KTC9018 , KTD1003A , KTD1003B , KTD1003C , 9013 , KTD1047 , KTD1145 , KTD1146 , KTD1302 , KTD1303 , KTD1304 , KTD1351 , KTD1352 .

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