MJ10015 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ10015
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 750 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
MJ10015 Transistor Equivalent Substitute - Cross-Reference Search
MJ10015 Datasheet (PDF)
mj10015r.pdf
Order this documentMOTOROLAby MJ10015/DSEMICONDUCTOR TECHNICAL DATAMJ10015MJ10016SWITCHMODE SeriesNPN Silicon Power Darlington50 AMPERETransistors with Base-EmitterNPN SILICONPO
mj10012 mj10012r.pdf
Order this documentMOTOROLAby MJ10012/DSEMICONDUCTOR TECHNICAL DATAMJ10012MJH10012NPN Silicon Power DarlingtonTransistor10 AMPEREThe MJ10012 and MJH10012 are high voltage, high curr
mj900-mj901-mj1000-mj1001-1.pdf
COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl
mj900-mj901-mj1000-mj1001.pdf
MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10
mj10012.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION With TO-3 package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbolute maximum ratings(Ta=25
mj10012t.pdf
isc Silicon NPN Darlington Power Transistor MJ10012TDESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATIN
mj1001.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS Designed for use as output devices in complementary general purpose
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
