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MJ10022 Transistor (IC) Datasheet. Cross Reference Search. MJ10022 Equivalent

Type Designator: MJ10022

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 250

Maximum collector-base voltage |Ucb|, V: 450

Maximum collector-emitter voltage |Uce|, V: 350

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 40

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 600

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of MJ10022 transistor: TO3

MJ10022 Transistor Equivalent Substitute - Cross-Reference Search

MJ10022 PDF:

1.1. mj10022r.pdf Size:300K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer's? Data Sheet SWITCHMODE Series 40 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 350 AND 400 VOLTS Speedup Diode 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage, high–speed, power switch

4.1. mj10020r.pdf Size:293K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Designer's? Data Sheet SWITCHMODE Series 60 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 200 AND 250 VOLTS Speedup Diode 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switch

5.1. mj10015r.pdf Size:217K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington 50 AMPERE Transistors with Base-Emitter NPN SILICON POWER DARLINGTON Speedup Diode TRANSISTORS 400 AND 500 VOLTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, 250 WATTS high–speed, power switching in inductive circuit

5.2. mj1000re.pdf Size:139K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 Medium-Power Complementary * MJ1001 Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applica- 10 AMPERE tions. DARLINGTON • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc POWER TRANSISTORS • Monolithic Construction with B

5.3. mj10000r.pdf Size:212K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's? Data Sheet 20 AMPERE SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTORS 350 VOLTS Transistor 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is part

5.4. mj10009r.pdf Size:235K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10009/D SEMICONDUCTOR TECHNICAL DATA MJ10009* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage, high–speed, power sw

5.5. mj10005r.pdf Size:229K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10005/D SEMICONDUCTOR TECHNICAL DATA * MJ10005 Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switchi

5.6. mj10007r.pdf Size:228K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10007/D SEMICONDUCTOR TECHNICAL DATA MJ10007* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Darlington 10 AMPERE NPN SILICON Transistors with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage, high–speed, power switchin

5.7. mj10012r.pdf Size:191K _motorola

MJ10022
MJ10022

Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN • Collector–Emitter Sustaining Voltage — SILICON

5.8. mj900-mj901-mj1000-mj1001-1.pdf Size:207K _comset

MJ10022
MJ10022

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementar

5.9. mj900-mj901-mj1000-mj1001.pdf Size:170K _comset

MJ10022
MJ10022

MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and

5.10. mj10003.pdf Size:207K _inchange_semiconductor

MJ10022
MJ10022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mod

5.11. mj1001.pdf Size:101K _inchange_semiconductor

MJ10022
MJ10022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose am

5.12. mj10002.pdf Size:79K _inchange_semiconductor

MJ10022
MJ10022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mod

5.13. mj10012.pdf Size:116K _inchange_semiconductor

MJ10022
MJ10022

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage,high current Ў¤ DARLINGTON APPLICATIONS Ў¤ Automotive ignition Ў¤ Switching regulator Ў¤ Motor control applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Abolute maximum ratings(Ta=2

5.14. mj1000.pdf Size:101K _inchange_semiconductor

MJ10022
MJ10022

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose am

See also transistors datasheet: MJ10011 , MJ10012 , MJ10013 , MJ10014 , MJ10015 , MJ10016 , MJ10020 , MJ10021 , 2SC5200 , MJ10023 , MJ10024 , MJ10025 , MJ10041 , MJ10042 , MJ10044 , MJ10045 , MJ10047 .

Search Terms:

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