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MJ10022
  MJ10022
  MJ10022
 
MJ10022
  MJ10022
  MJ10022
 
MJ10022
  MJ10022
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
MJ10022 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJ10022 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ10022

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 250

Maximum collector-base voltage |Ucb|, V: 450

Maximum collector-emitter voltage |Uce|, V: 350

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 40

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 600

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of MJ10022 transistor: TO3

MJ10022 Equivalent Transistors - Cross-Reference Search

MJ10022 PDF doc:

1.1. mj10022r.pdf Size:300K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer's? Data Sheet SWITCHMODE Series 40 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 350 AND 400 VOLTS Speedup Diode 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications such as: • AC and DC Motor Controls • Switching Regulators • Inverters • Solenoid and Relay Drivers • Fast Turn–Off Times 150 ns Inductive Fall Time @ 25_C (Typ) CASE 197A–05 300 ns Inductive Storage Time @ 25_C (Typ) TO–204AE (TO–3) • Operating Temperature Range – 65 to + 200_C ? 100 ? 15 • 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII

4.1. mj10020r.pdf Size:293K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Designer's? Data Sheet SWITCHMODE Series 60 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DARLINGTON Transistors with Base-Emitter TRANSISTORS 200 AND 250 VOLTS Speedup Diode 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • AC and DC Motor Controls • Switching Regulators • Inverters • Solenoid and Relay Drivers • Fast Turn–Off Times 150 ns Inductive Fall Time at 25_C (Typ) CASE 197A–05 750 ns Inductive Storage Time at 25_C (Typ) TO–204AE (TO–3) • Operating Temperature Range –65 to +200_C ? 100 ? 15 • 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII

5.1. mj10012r.pdf Size:191K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN • Collector–Emitter Sustaining Voltage — SILICON COLLECTOR VCEO(sus) = 400 Vdc (Min) 400 VOLTS • 175 Watts Capability at 50 Volts 175 AND 118 WATTS • Automotive Functional Tests BASE ? 1 k ? 30 IIIIIIIIIIIIIIIIIIIIIII EMITTER IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII III IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII III IIIIIIIIIII IIIIIIII IIII III IIII IIII MAXIMUM RATINGS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIIIIII IIIII III IIIIIIIIIII IIIIIIII IIII IIII IIII III TO–204AA Rating SymbolIIIIIIII Unit MJ10012 MJH10012III (TO–3) IIIIIIIIIII IIIII III IIIIIIIIIII IIIIIIII IIIIIIIIIII

5.2. mj10005r.pdf Size:229K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10005/D SEMICONDUCTOR TECHNICAL DATA * MJ10005 Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits CASE 1–07 Fast Turn–Off Times TO–204AA 40 ns Inductive Fall Time — 25_C (Typ) (TO–3) 650 ns Inductive Storage Time — 25_C (Typ) Operating Temperature Range –65 to +200_C ? 100 ? 15 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Saturation Voltages

5.3. mj10007r.pdf Size:228K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10007/D SEMICONDUCTOR TECHNICAL DATA MJ10007* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Darlington 10 AMPERE NPN SILICON Transistors with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Fast Turn–Off Times CASE 1–07 TO–204AA 30 ns Inductive Fall Time — 25_C (Typ) (TO–3) 500 ns Inductive Storage Time — 25_C (Typ) Operating Temperature Range –65 to +200_C ? 100 ? 15 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Saturation Voltages

5.4. mj10015r.pdf Size:217K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington 50 AMPERE Transistors with Base-Emitter NPN SILICON POWER DARLINGTON Speedup Diode TRANSISTORS 400 AND 500 VOLTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, 250 WATTS high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications such as: • Switching Regulators • Motor Controls • Inverters • Solenoid and Relay Drivers • Fast Turn–Off Times 1.0 µs (max) Inductive Crossover Time — 20 Amps 2.5 µs (max) inductive Storage Time — 20 Amps CASE 197–05 • Operating Temperature Range –65 to +200_C TO–204AE TYPE • Performance Specified for (TO–3 TYPE) ? 50 ? 8 Reversed Biased SOA with Inductive Load Switching Times with Inductive Loads IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Saturation Voltages Leakage Currents III

5.5. mj1000re.pdf Size:139K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 Medium-Power Complementary * MJ1001 Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applica- 10 AMPERE tions. DARLINGTON • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc POWER TRANSISTORS • Monolithic Construction with Built–in Base–Emitter Shunt Resistors COMPLEMENTARY SILICON 60–80 VOLTS 90 WATTS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIII IIII IIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIII IIIII IIII IIIII IIIIII MAXIMUM RATINGS IIIII IIIIII Rating Symbol MJ1000 MJ1001 Unit IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIII IIIII IIII IIIII IIIIII IIIII IIIIII IIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIII IIIIIIIIII IIIII

5.6. mj10009r.pdf Size:235K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10009/D SEMICONDUCTOR TECHNICAL DATA MJ10009* Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage, high–speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits CASE 1–07 Fast Turn–Off Times TO–204AA 1.6 µs (max) Inductive Crossover Time – 10 A, 100_C (TO–3) 3.5 µs (max) Inductive Storage Time – 10 A, 100_C Operating Temperature Range –65 to +200_C ? 100 ? 15 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads IIIIIIIIIIIIIIIIIIIIIIIIIIIIII

5.7. mj10000r.pdf Size:212K _motorola

MJ10022
MJ10022
Order this document MOTOROLA by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's? Data Sheet 20 AMPERE SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTORS 350 VOLTS Transistor 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits CASE 1–07 100_C Performance Specified for: TO–204AA Reversed Biased SOA with Inductive Loads (TO–3) Switching Times With Inductive Loads — ? 100 ? 15 210 ns Inductive Fall Time (Typ) Saturation Voltages IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Leakage Currents IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIII

5.8. mj900-mj901-mj1000-mj1001-1.pdf Size:207K _comset

MJ10022
MJ10022
COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ900 60 MJ1000 VCBO Collector-Base Voltage Vdc MJ901 80 MJ1001 MJ900 60 MJ1000 VCEO Collector-EmitterVoltage IB=0 Vdc MJ901 80 MJ1001 MJ900 MJ1000 VEBO Emitter-Base Voltage 5.0 Vdc MJ901 MJ1001 MJ900 MJ1000 IC Collector Current IC(RMS) 8.0 Adc MJ901 MJ1001 1/4 COMSET Semiconductors MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN Symbol Ratings Value Unit MJ900 MJ1000 IB Base Current 0.1 Adc MJ901 MJ1001 @ TC < 25° 90 Watts MJ900 MJ1000 PT Power Dissipation MJ

5.9. mj900-mj901-mj1000-mj1001.pdf Size:170K _comset

MJ10022
MJ10022
MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ900 60 MJ1000 VCBO Collector-Base Voltage Vdc MJ901 80 MJ1001 MJ900 60 MJ1000 VCEO Collector-EmitterVoltage IB=0 Vdc MJ901 80 MJ1001 MJ900 MJ1000 VEBO Emitter-Base Voltage 5.0 Vdc MJ901 MJ1001 MJ900 MJ1000 IC Collector Current IC(RMS) 8.0 Adc MJ901 MJ1001 Page 1 of 4 MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN Symbol Ratings Value Unit MJ900 MJ1000 IB Base Current 0.1 Adc MJ901 MJ1001 @ TC < 25° MJ900 90 Watts MJ1000 PT Power Dissipation Derate abov

5.10. mj10012.pdf Size:116K _inchange_semiconductor

MJ10022
MJ10022
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage,high current Ў¤ DARLINGTON APPLICATIONS Ў¤ Automotive ignition Ў¤ Switching regulator Ў¤ Motor control applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Abolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 600 400 8 10 15 2 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 175 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT Ўж /W

5.11. mj10002.pdf Size:79K _inchange_semiconductor

MJ10022
MJ10022
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEO(SUS) Collector-Emitter Voltage 350 V VCEX(SUS) Collector-Emitter Voltage 400 V VCEV Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continunous 2.5 A IBM Base Current-Peak 5.0 A Collector Power Dissipation PC @TC=25? 150 W Tj Junction Temperature 200 ? Tstg Storage Temperat

5.12. mj1000.pdf Size:101K _inchange_semiconductor

MJ10022
MJ10022
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IBB Base Current-Continunous 0.1 A Collector Power Dissipation PC @TC=25? 90 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -55~+200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.94 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN

5.13. mj10003.pdf Size:207K _inchange_semiconductor

MJ10022
MJ10022
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEO(SUS) Collector-Emitter Voltage 400 V VCEX(SUS) Collector-Emitter Voltage 450 V VCEV Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continunous 2.5 A Collector Power Dissipation PC @TC=25? 150 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL

5.14. mj1001.pdf Size:101K _inchange_semiconductor

MJ10022
MJ10022
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IBB Base Current-Continunous 0.1 A Collector Power Dissipation PC @TC=25? 90 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -55~+200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.94 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN

See also transistors datasheet: MJ10011 , MJ10012 , MJ10013 , MJ10014 , MJ10015 , MJ10016 , MJ10020 , MJ10021 , 2SC5200 , MJ10023 , MJ10024 , MJ10025 , MJ10041 , MJ10042 , MJ10044 , MJ10045 , MJ10047 .

Keywords

 MJ10022 Datasheet  MJ10022 Datenblatt  MJ10022 RoHS  MJ10022 Distributor
 MJ10022 Application Notes  MJ10022 Component  MJ10022 Circuit  MJ10022 Schematic
 MJ10022 Equivalent  MJ10022 Cross Reference  MJ10022 Data Sheet  MJ10022 Fiche Technique

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