MJ10045 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ10045

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 250

Maximum collector-base voltage |Ucb|, V: 500

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 8

Maximum collector current |Ic max|, A: 75

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 2000

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of MJ10045 transistor: TO66

MJ10045 Equivalent Transistors - Cross-Reference Search

MJ10045 PDF document for downloads:

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Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN • Collector–Emitter Sustaining Voltage — SILICON COLLECTOR VCEO(sus) = 400 Vdc (Min) 400 VOLTS • 175 Watts Capability at 50 Volts 175 AND 118 WATTS • Automotive Functional Tests BASE ? 1 k ? 30 IIIIIIIIIIIIIIIIIIIIIII EMITTER IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII III IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII III IIIIIIIIIII IIIIIIII IIII III IIII IIII MAXIMUM RATINGS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIIIIII IIIII III IIIIIIIIIII IIIIIIII IIII IIII IIII III TO–204AA Rating SymbolIIIIIIII Unit MJ10012 MJH10012III (TO–3) IIIIIIIIIII IIIII III IIIIIIIIIII IIIIIIII IIIIIIIIIII

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Order this document MOTOROLA by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's? Data Sheet 20 AMPERE SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington TRANSISTORS 350 VOLTS Transistor 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits CASE 1–07 100_C Performance Specified for: TO–204AA Reversed Biased SOA with Inductive Loads (TO–3) Switching Times With Inductive Loads — ? 100 ? 15 210 ns Inductive Fall Time (Typ) Saturation Voltages IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Leakage Currents IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIII IIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIII

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Order this document MOTOROLA by MJ10005/D SEMICONDUCTOR TECHNICAL DATA * MJ10005 Designer's? Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NPN SILICON Transistor with Base-Emitter POWER DARLINGTON TRANSISTORS Speedup Diode 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits CASE 1–07 Fast Turn–Off Times TO–204AA 40 ns Inductive Fall Time — 25_C (Typ) (TO–3) 650 ns Inductive Storage Time — 25_C (Typ) Operating Temperature Range –65 to +200_C ? 100 ? 15 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Saturation Voltages

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MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ900 60 MJ1000 VCBO Collector-Base Voltage Vdc MJ901 80 MJ1001 MJ900 60 MJ1000 VCEO Collector-EmitterVoltage IB=0 Vdc MJ901 80 MJ1001 MJ900 MJ1000 VEBO Emitter-Base Voltage 5.0 Vdc MJ901 MJ1001 MJ900 MJ1000 IC Collector Current IC(RMS) 8.0 Adc MJ901 MJ1001 Page 1 of 4 MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN Symbol Ratings Value Unit MJ900 MJ1000 IB Base Current 0.1 Adc MJ901 MJ1001 @ TC < 25° MJ900 90 Watts MJ1000 PT Power Dissipation Derate abov

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COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ900 60 MJ1000 VCBO Collector-Base Voltage Vdc MJ901 80 MJ1001 MJ900 60 MJ1000 VCEO Collector-EmitterVoltage IB=0 Vdc MJ901 80 MJ1001 MJ900 MJ1000 VEBO Emitter-Base Voltage 5.0 Vdc MJ901 MJ1001 MJ900 MJ1000 IC Collector Current IC(RMS) 8.0 Adc MJ901 MJ1001 1/4 COMSET Semiconductors MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN Symbol Ratings Value Unit MJ900 MJ1000 IB Base Current 0.1 Adc MJ901 MJ1001 @ TC < 25° 90 Watts MJ900 MJ1000 PT Power Dissipation MJ

5.12. mj1001.pdf Size:101K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IBB Base Current-Continunous 0.1 A Collector Power Dissipation PC @TC=25? 90 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -55~+200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.94 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN

5.13. mj1000.pdf Size:101K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IBB Base Current-Continunous 0.1 A Collector Power Dissipation PC @TC=25? 90 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -55~+200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.94 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN

5.14. mj10002.pdf Size:79K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEO(SUS) Collector-Emitter Voltage 350 V VCEX(SUS) Collector-Emitter Voltage 400 V VCEV Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continunous 2.5 A IBM Base Current-Peak 5.0 A Collector Power Dissipation PC @TC=25? 150 W Tj Junction Temperature 200 ? Tstg Storage Temperat

5.15. mj10003.pdf Size:207K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEO(SUS) Collector-Emitter Voltage 400 V VCEX(SUS) Collector-Emitter Voltage 450 V VCEV Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 20 A IBB Base Current-Continunous 2.5 A Collector Power Dissipation PC @TC=25? 150 W Tj Junction Temperature 200 ? Tstg Storage Temperature Range -65~200 ? THERMAL

5.16. mj10012.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage,high current Ў¤ DARLINGTON APPLICATIONS Ў¤ Automotive ignition Ў¤ Switching regulator Ў¤ Motor control applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Abolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 600 400 8 10 15 2 UNIT V V V A A A W Ўж Ўж Emitter-base voltage Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 175 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT Ўж /W

See also transistors datasheet: MJ10021 , MJ10022 , MJ10023 , MJ10024 , MJ10025 , MJ10041 , MJ10042 , MJ10044 , BD140 , MJ10047 , MJ10048 , MJ10050 , MJ10051 , MJ10052 , MJ100BD45 , MJ100BK100 , MJ10100 .

Keywords