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2N4261 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N4261

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 2000

Collector capacitance (Cc), pF: 2.5

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2N4261 transistor: TO72

2N4261 Equivalent Transistors - Cross-Reference Search

2N4261 PDF document for downloads:

1.1. 2n4261.pdf Size:47K _semicoa

Data Sheet No. 2N4261 Generic Part Number: Type 2N4261 2N4261 Geometry 0014 Polarity PNP REF: MIL-PRF-19500/511 Qual Level: JAN - JANS Features: • Fast switching small signal silicon transistor. • Housed in a TO-72 case. • Also available in chip form using the 0014 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/511 which Semicoa meets in all cases. • Radiation graphs available. TO-72 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 15 V VCBO Collector-Base Voltage 15 V Emitter-Base Voltage VEBO 4.5 V IC Collector Current, Continuous 30 mA o TJ Operating Junction Temperature -65 to +200 C o Storage Temperature TSTG -65 to +200 C Data Sheet No. 2N4261 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 15 --- V IC = 10 µA Collector-Emitter Breakdown Voltage V(BR)CEO 15 -

5.1. 2n4264_2n4265.pdf Size:264K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistors NPN Silicon 2N4264 2N4265 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N4264 2N4265 Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 Watts Derate above 25°C 8.0 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 m

5.2. 2n4264.pdf Size:169K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4264/D General Purpose Transistor NPN Silicon 2N4264 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol Value Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 Watts Derate above 25°C 8.0 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 15 — C

See also transistors datasheet: 2N4257 , 2N4257A , 2N4258 , 2N4258A , 2N4259 , 2N426 , 2N4260 , 2N4260UB , BC546 , 2N4261UB , 2N4262 , 2N4263 , 2N4264 , 2N4265 , 2N4266 , 2N4269 , 2N4269S .

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