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MJ12003 Transistor (IC) Datasheet. Cross Reference Search. MJ12003 Equivalent

Type Designator: MJ12003

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V:

Maximum collector-emitter voltage |Uce|, V: 1500

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of MJ12003 transistor: TO3

MJ12003 Transistor Equivalent Substitute - Cross-Reference Search

MJ12003 PDF:

1.1. mj12003.pdf Size:100K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12003 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V

4.1. mj12002.pdf Size:200K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12002 DESCRIPTION · Collector-Emitter Voltage- VCEX = 1500V ·Forward Bias safe Safe Operation Area ·Switching Time with Inductive Load APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitte

4.2. mj12005.pdf Size:196K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12005 DESCRIPTION · Collector-Emitter Voltage- VCEX = 1500V ·Safe Operation Area APPLICATIONS ·Designed for use in deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Cont

4.3. mj12004.pdf Size:202K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12004 DESCRIPTION · Collector-Emitter Voltage- VCEX = 1500V ·Safe Operation Area ·Switching Time with Inductive Load APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V

See also transistors datasheet: MJ11028 , MJ11029 , MJ11030 , MJ11031 , MJ11032 , MJ11033 , MJ1200 , MJ12002 , BF494 , MJ12004 , MJ12005 , MJ1201 , MJ12010 , MJ12020 , MJ12021 , MJ12022 , MJ13014 .

Search Terms:

 MJ12003 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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