MJ13070 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ13070

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 125

Maximum collector-base voltage |Ucb|, V: 650

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 250

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of MJ13070 transistor: TO3

MJ13070 Equivalent Transistors - Cross-Reference Search

MJ13070 PDF document for downloads:

1.1. mj13070_13071.pdf Size:137K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13070 = 450V(Min)—MJ13071 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT MJ13070 650 VCEV Collector-Emitter Voltage V MJ13071 750 MJ13070 400 VCEO(SUS) Collector-Emitter Voltage V MJ13071 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IBB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation@TC=25? 125 W TJ Junction Te

5.1. mj13080_13081.pdf Size:137K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13080 = 450V(Min)—MJ13081 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT MJ13080 650 VCEV Collector-Emitter Voltage V MJ13081 750 MJ13080 400 VCEO(SUS) Collector-Emitter Voltage V MJ13081 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IBB Base Current-Continuous 3 A IBM Base Current-Peak 6 A PC Collector Power Dissipation@TC=25? 150 W TJ Junction T

5.2. mj13090_13091.pdf Size:187K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT MJ13090 650 VCEV Collector-Emitter Voltage V MJ13091 750 MJ13090 400 VCEO(SUS) Collector-Emitter Voltage V MJ13091 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IBB Base Current-Continuous 5 A IBM Base Current-Peak 10 A PC Collector Power Dissipation@TC=25? 175 W TJ Junction

See also transistors datasheet: MJ12005 , MJ1201 , MJ12010 , MJ12020 , MJ12021 , MJ12022 , MJ13014 , MJ13015 , 2N2219A , MJ13071 , MJ13080 , MJ13081 , MJ13090 , MJ13091 , MJ13100 , MJ13101 , MJ13330 .

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