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MJ13330 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ13330

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 175

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 5

Collector capacitance (Cc), pF: 400

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of MJ13330 transistor: TO3

MJ13330 Equivalent Transistors - Cross-Reference Search

MJ13330 PDF document for downloads:

1.1. mj13330.pdf Size:175K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13330 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 10 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25? 175 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL

4.1. mj13333r.pdf Size:278K _motorola

Order this document MOTOROLA by MJ13333/D SEMICONDUCTOR TECHNICAL DATA MJ13333 Designer's? Data Sheet SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor NPN SILICON POWER TRANSISTORS The MJ13333 transistor is designed for high voltage, high–speed, power switching 400–500 VOLTS in inductive circuits where fall time is critical. It is particularly suited for line operated 175 WATTS switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • Deflection Circuits Fast Turn Off Times 200 ns Inductive Fall Time — 25_C (Typ) CASE 1–07 1.8 µs Inductive Storage Time — 25_C (Typ) TO–204AA Operating Temperature Range –65 to +200_C (TO–3) 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Saturation Voltages Leakage Currents IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIII IIIIIII

4.2. mj13334.pdf Size:262K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13334 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switchmode applications. ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25? 175 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Ther

4.3. mj13332.pdf Size:175K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13332 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 650 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25? 175 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL

4.4. mj13335.pdf Size:262K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13335 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switchmode applications. ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25? 175 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Ther

4.5. mj13331.pdf Size:175K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13331 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 450 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 10 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25? 175 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL

4.6. mj13333.pdf Size:262K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13333 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switchmode applications. ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25? 175 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Ther

See also transistors datasheet: MJ13070 , MJ13071 , MJ13080 , MJ13081 , MJ13090 , MJ13091 , MJ13100 , MJ13101 , 100DA025D , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , MJ14001 , MJ14002 .

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