MJ14002 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ14002

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 300

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 60

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 2000

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of MJ14002 transistor: TO3

MJ14002 Equivalent Transistors - Cross-Reference Search

MJ14002 PDF document for downloads:

1.1. mj14001_mj14002_mj14003.pdf Size:90K _onsemi

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High-Current Complementary Silicon Power Transistors Designed for use in high-power amplifier and switching circuit http://onsemi.com applications. Features 60 AMPERE • High Current Capability - IC Continuous = 60 Amperes COMPLEMENTARY SILICON • DC Current Gain - hFE = 15-100 @ IC = 50 Adc POWER TRANSISTORS • Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.5 Vdc (Max) 60-80 VOLTS, 300 WATTS @ IC = 50 Adc • Pb-Free Packages are Available* MARKING MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) DIAGRAM Rating Symbol Value Unit Collector-Emitter Voltage MJ14001 VCEO 60 Vdc MJ14002/03 80 Collector-Base Voltage MJ14001 VCBO 60 Vdc MJ14002/03 80 MJ1400xG Emitter-Base Voltage VEBO 5.0 Vdc AYYWW MEX Collector Current - Continuous IC 60 Adc Base Current - Continuous IB 15 Adc TO-204 (TO-3) CASE 197A Emitter Current - Continuous IE 75 Adc STYLE 1 Total Power Dissipation @ TC = 25°C PD 3

4.1. mj14001r.pdf Size:241K _motorola

Order this document MOTOROLA by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* High-Current Complementary PNP MJ14001 Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, MJ14003* • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc *Motorola Preferred Device • Low Collector–Emitter Saturation Voltage — IIIIIIIIIIIIIIIIIIIIIII VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc 60 AMPERES IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII COMPLEMENTARY SILICON IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIII IIII MAXIMUM RATINGS POWER TRANSITORS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIII IIII III IIII IIII IIII IIII MJ14002 60–80 VOLTS Rating Symbol Unit MJ14001 MJ14003 IIIIIIIIIIII IIII III IIIIIIIIIIII IIII III IIIIIIIIIIII IIII III 300 WATTS IIII IIII IIII IIII IIII IIII Collector–Emitter Voltage VCEO 60 80 Vdc IIIIIIIII

See also transistors datasheet: MJ13330 , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , MJ14001 , BC550 , MJ14003 , MJ15001 , MJ15002 , MJ15003 , MJ15004 , MJ15011 , MJ15012 , MJ15015 .

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