MJ15004 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ15004

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 140

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF: 1000

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of MJ15004 transistor: TO3

MJ15004 Equivalent Transistors - Cross-Reference Search

MJ15004 PDF document for downloads:

1.1. mj15003_mj15004.pdf Size:60K _onsemi

MJ15003 (NPN), MJ15004 (PNP) Preferred Device Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear http://onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS • High Safe Operating Area (100% Tested) - 5.0 A @ 50 V • For Low Distortion Complementary Designs COMPLEMENTARY SILICON • High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc 140 VOLTS, 250 WATTS • Pb-Free Packages are Available* MAXIMUM RATINGS IIIIIIIIIIIIIIIIIII TO-204AA (TO-3) CASE 1-07 Rating Symbol ValueIII Unit IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III STYLE 1 Collector-Emitter Voltage VCEOIIII Vdc 140 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III Collector-Base Voltage VCBOIIII Vdc 140 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III Emitter-Base Voltage VEBOIIII Vdc 5 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III MARKING DIAGRAM Collector Current - Contin

1.2. mj15004.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15004 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type MJ15003 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25Ўж Open emitter OND IC CONDITIONS TOR UC VALUE -140 -140 -5 -20 -5 25 250 200 -65~200 UNIT V V V A A A W Ўж Ўж Open collector Base current Emitter current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.7 UNIT Ўж /W

4.1. mj15001r.pdf Size:165K _motorola

Order this document MOTOROLA by MJ15001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15001 Complementary Silicon Power PNP MJ15002 Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100% Tested) — 15 AMPERE 200 W @ 40 V POWER TRANSISTORS 50 W @ 100 V COMPLEMENTARY • For Low Distortion Complementary Designs SILICON • High DC Current Gain — 140 VOLTS hFE = 25 (Min) @ IC = 4 Adc 200 WATTS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII (TO–3) IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII Rating Symbol Value Unit

4.2. mj15003r.pdf Size:119K _motorola

Order this document MOTOROLA by MJ15003/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15003* Complementary Silicon Power PNP MJ15004* Transistors The MJ15003 and MJ15004 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. • High Safe Operating Area (100% Tested) — 20 AMPERE 250 W @ 50 V POWER TRANSISTORS • For Low Distortion Complementary Designs COMPLEMENTARY • High DC Current Gain — SILICON hFE = 25 (Min) @ IC = 5 Adc 140 VOLTS 250 WATTS CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII (TO–3) IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII Rating

4.3. mj15001_mj15002.pdf Size:71K _onsemi

MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBaset power transistors designed for high power audio, disk head positioners and other linear http://onsemi.com applications. Features 20 AMPERE POWER TRANSISTORS • High Safe Operating Area (100% Tested) - 5.0 A @ 40 V 0.5 A @ 100 V COMPLEMENTARY SILICON • For Low Distortion Complementary Designs 140 VOLTS, 250 WATTS • High DC Current Gain - hFE = 25 (Min) @ IC = 4 Adc • Pb-Free Packages are Available* MAXIMUM RATINGS IIIIIIIIIIIIIIIIIII TO-204AA (TO-3) Rating Symbol ValueIII Unit IIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III CASE 1-07 STYLE 1 Collector-Emitter Voltage VCEOIIII Vdc 140 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III Collector-Base Voltage VCBOIIII Vdc 140 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III Emitter-Base Voltage VEBOIIII Vdc 5 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III Collector Current - Continuous IC 15 Adc MARKING

4.4. mj15003-04.pdf Size:156K _mospec

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4.5. mj15003.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ15003 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type MJ15004 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25Ўж Open emitter OND IC CONDITIONS TOR UC VALUE 140 140 5 20 5 -25 250 200 -65~200 UNIT V V V A A A W Ўж Ўж Open collector Base current Emitter current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.7 UNIT Ўж /W

4.6. mj15002.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15002 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type MJ15001 Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25Ўж Open emitter OND IC CONDITIONS TOR UC VALUE -140 -140 -5 -15 -5 20 250 200 -65~200 UNIT V V V A A A W Ўж Ўж Open collector Base current Emitter current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT Ўж /W

4.7. mj15001.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ15001 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type MJ15002 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25Ўж Open emitter OND IC CONDITIONS TOR UC VALUE 140 140 5 15 5 -20 200 200 -65~200 UNIT V V V A A A W Ўж Ўж Open collector Base current Emitter current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT Ўж /W

See also transistors datasheet: MJ13335 , MJ14000 , MJ14001 , MJ14002 , MJ14003 , MJ15001 , MJ15002 , MJ15003 , 2SC114 , MJ15011 , MJ15012 , MJ15015 , MJ15016 , MJ15018 , MJ15019 , MJ15020 , MJ15021 .

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