MJ2500 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ2500

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 1000

Noise Figure, dB: -

Package of MJ2500 transistor: TO3

MJ2500 Equivalent Transistors - Cross-Reference Search

MJ2500 PDF document for downloads:

1.1. mj2500re.pdf Size:132K _motorola

Order this document MOTOROLA by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary PNP Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applica- * MJ2501 tions. NPN • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors MJ3000 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII MJ3001* IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII MAXIMUM RATINGS *Motorola Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII MJ2500 MJ2501 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII IIIII IIII 10 AMPERE MJ3000 MJ3001 Rating Symbol Unit DARLINGTON IIIIIIIIIII IIII III IIIII IIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIIIIIIIII IIIIIII IIIII III IIIII IIII

1.2. mj2500-mj2501-mj3000-mj3001.pdf Size:168K _comset

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ2500 60 MJ3000 VCBO Collector-Base Voltage IE=0 Vdc MJ2501 80 MJ3001 MJ2500 60 MJ3000 VCEO Collector-EmitterVoltage IB=0 Vdc MJ2501 80 MJ3001 MJ2500 MJ3000 VEBO Emitter-Base Voltage IC=0 5.0 Vdc MJ2501 MJ3001 MJ2500 MJ3000 IC Collector Current 10 Adc MJ2501 MJ3001 MJ2500 MJ3000 IB Base Current 0.2 Adc MJ2501 MJ3001 MJ2500 MJ3000 @ TC < 25° PT Power Dissipation 150 Watts MJ2501 MJ3001 MJ2500 MJ3000 Junction 200 TJ Ts °C Storage Temperature MJ2501 -65 to +200 MJ3001 Page 1 of 3 THERMAL CHARACTERISTICS Symbol Ratings Valu

1.3. mj2500.pdf Size:95K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ2500 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) ·Complement to type MJ3000 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -10 A IBB Base Current -0.2 A PC Collector Power Dissipation@TC=25? 150 W Junction Temperature 200 ? TJ Storage Temperature -55~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 1.17 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Pow

See also transistors datasheet: MJ2249 , MJ2250 , MJ2251 , MJ2252 , MJ2253 , MJ2254 , MJ2267 , MJ2268 , 2N3773 , MJ2501 , MJ2801 , MJ2802 , MJ2814 , MJ2816 , MJ2832 , MJ2840 , MJ2841 .

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