All Transistors. MJ802 Datasheet

 

MJ802 Transistor. Datasheet pdf. Equivalent

Type Designator: MJ802

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

MJ802 Transistor Equivalent Substitute - Cross-Reference Search

MJ802 Datasheet PDF:

1.1. mj802rev.pdf Size:136K _motorola

MJ802
MJ802

Order this document MOTOROLA by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon 30 AMPERE Transistor POWER TRANSISTOR NPN SILICON . . . for use as an output device in complementary audio amplifiers to 100–Watts 100 VOLTS music power per channel. 200 WATTS • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4

1.2. mj802.pdf Size:41K _st

MJ802
MJ802

MJ802 ® SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-emitter Voltage (IB =

1.3. mj802-d.pdf Size:70K _onsemi

MJ802
MJ802

MJ802 High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. Features http://onsemi.com • High DC Current Gain - hFE = 25-100 @ IC = 7.5 A 30 AMPERE • Excellent Safe Operating Area POWER TRANSISTOR • Complement to the PNP MJ4502 NPN SILICON • Pb-Free Package is Available* 100 VOLTS - 200

1.4. mj802.pdf Size:111K _mospec

MJ802
MJ802

A A A

1.5. mj802.pdf Size:145K _inchange_semiconductor

MJ802
MJ802

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Complement to Type MJ4502 APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMET

Datasheet: MJ6701 , MJ7000 , MJ7160 , MJ7161 , MJ7200 , MJ7201 , MJ7260 , MJ7261 , MD1803DFX , MJ8100 , MJ8101 , MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , MJ8504 .

 


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