All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
MJ802
  MJ802
  MJ802
  MJ802
 
MJ802
  MJ802
  MJ802
  MJ802
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
MJ802 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

MJ802 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJ802

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 90

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 30

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of MJ802 transistor: TO3

MJ802 Equivalent Transistors - Cross-Reference Search

MJ802 PDF doc:

1.1. mj802rev.pdf Size:136K _motorola

MJ802
MJ802
Order this document MOTOROLA by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon 30 AMPERE Transistor POWER TRANSISTOR NPN SILICON . . . for use as an output device in complementary audio amplifiers to 100–Watts 100 VOLTS music power per channel. 200 WATTS • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502 CASE 1–07 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO–204AA (TO–3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII MAXIMUM RATINGS IIIIIII IIII Rating IIIIIII Value IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII Symbol IIIIIIII Unit IIIIIII IIII IIIIIII IIII Collector–Emitter Voltage IIIIIII 100 IIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII II

1.2. mj802.pdf Size:41K _st

MJ802
MJ802
MJ802 ® SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-emitter Voltage (IB = 0) 90 V VCBO Collector-base Voltage (IE = 0) 100 V V Emitter-Base Voltage (I = 0) 4 V EBO C IC Collector Current 30 A IB Base Current 7.5 A P 200 W tot Total Dissipation at Tc ? 25 oC o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 October 2003 MJ802 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 0.875 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 100 V 1 mA CBO CB Current (IE = 0) VCB = 100 V Tcase = 150 oC

1.3. mj802-d.pdf Size:70K _onsemi

MJ802
MJ802
MJ802 High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. Features http://onsemi.com • High DC Current Gain - hFE = 25-100 @ IC = 7.5 A 30 AMPERE • Excellent Safe Operating Area POWER TRANSISTOR • Complement to the PNP MJ4502 NPN SILICON • Pb-Free Package is Available* 100 VOLTS - 200 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 100 Vdc Collector-Base Voltage VCB 100 Vdc Collector-Emitter Voltage VCEO 90 Vdc Emitter-Base Voltage VEB 4.0 Vdc Collector Current IC 30 Adc Base Current IB 7.5 Adc TO-204AA (TO-3) CASE 1-07 Total Device Dissipation @ TC = 25_C PD 200 W STYLE 1 Derate above 25_C 1.14 W/_C Operating and Storage Junction TJ, Tstg -65 to +200 _C Temperature Range MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 0.875 _C/W Maximum ratings are those value

1.4. mj802.pdf Size:111K _mospec

MJ802
MJ802
A A A

1.5. mj802.pdf Size:145K _inchange_semiconductor

MJ802
MJ802
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Complement to Type MJ4502 APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 30 A IBB Base Current-Continuous 7.5 A PC Collector Power Dissipation@TC=25? 200 W TJ Junction Temperature 150 ? Storage Temperature Range -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 0.875 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 ELECTRICAL CHARACTERISTICS TC=25? unless otherwis

See also transistors datasheet: MJ6701 , MJ7000 , MJ7160 , MJ7161 , MJ7200 , MJ7201 , MJ7260 , MJ7261 , MD1803DFX , MJ8100 , MJ8101 , MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , MJ8504 .

Keywords

 MJ802 Datasheet  MJ802 Datenblatt  MJ802 RoHS  MJ802 Distributor
 MJ802 Application Notes  MJ802 Component  MJ802 Circuit  MJ802 Schematic
 MJ802 Equivalent  MJ802 Cross Reference  MJ802 Data Sheet  MJ802 Fiche Technique

 

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com