MJD127T4 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJD127T4

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 6000

Noise Figure, dB: -

Package of MJD127T4 transistor: TO252

MJD127T4 Equivalent Transistors - Cross-Reference Search

MJD127T4 PDF document for downloads:

4.1. mjd122re_mjd127.pdf Size:284K _motorola

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS • Straight Lead Version in Plastic Sleeves (“–1” Suffix) 8 AMPERES • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) 100 VOLTS • Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122 20 WATTS Series, and TIP125–TIP127 Series • Monolithic Construction With Built–in Base–Emitter Shunt Resistors • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc IIIIIIIIIIIIIIIIIIIIIII • Complementary Pairs Simplifies Designs IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII III MAXIMUM

4.2. mjd122_mjd127.pdf Size:93K _st

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix ”T4”) DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM R Typ. = 10 K? R Typ. = 150 ? 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD122 PNP MJD127 V Collector-Base Voltage (I = 0) 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 100 V V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 5 A C ICM Collector Peak Current 8 A I Base Current 100 mA B Pto t Total Dissipation at Tcase ? 25 oC20 W o Tstg Storage Temperature

4.3. mjd127.pdf Size:201K _lge

MJD127(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ? Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -10 ВµA Collector-emitter cut-off current

See also transistors datasheet: MJD117 , MJD117-1 , MJD117T4 , MJD122 , MJD122-1 , MJD122T4 , MJD127 , MJD127-1 , 2N5133 , MJD13003 , MJD148 , MJD200 , MJD200-1 , MJD210 , MJD210-1 , MJD210T4 , MJD243 .

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