MJD41C-1 Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJD41C-1

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of MJD41C-1 transistor: TO252

MJD41C-1 Equivalent Transistors - Cross-Reference Search

MJD41C-1 PDF document for downloads:

4.1. mjd41c_mjd42c.pdf Size:195K _motorola

Order this document MOTOROLA by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* Complementary Power PNP MJD42C* Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS • Straight Lead Version in Plastic Sleeves (“–1” Suffix) 6 AMPERES • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) 100 VOLTS • Electrically Similar to Popular TIP41 and TIP42 Series 20 WATTS • Monolithic Construction With Built–in Base–Emitter Resistors IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIII III MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIII III IIIII III MJD41C IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIII III IIIII

4.2. mjd41ctf.pdf Size:47K _fairchild_semi

MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V ICEO Collector Cut-off Current VCE = 6

4.3. mjd41c.pdf Size:47K _fairchild_semi

MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V ICEO Collector Cut-off Current VCE = 6

4.4. mjd41c_mjd42c.pdf Size:117K _onsemi

MJD41C (NPN) MJD42C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON Features POWER TRANSISTORS • Lead Formed for Surface Mount Applications in Plastic Sleeves 6 AMPERES (No Suffix) 100 VOLTS, 20 WATTS • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Electrically Similar to Popular TIP41 and TIP42 Series MARKING • Epoxy Meets UL 94 V-0 @ 0.125 in DIAGRAMS • ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 4 AYWW • These are Pb-Free Packages J4xCG 2 1 3 DPAK MAXIMUM RATINGS CASE 369C STYLE 1 Rating Symbol Max Unit Collector-Emitter Voltage VCEO 100 Vdc 4 Collector-Base Voltage VCB 100 Vdc AYWW Emitter-Base Voltage VEB 5 Vdc J4xCG IC 6 Adc Collector Current - Continuous 1 10 - Peak 2 DPAK-3 3 CASE 369D Base Current IB 2 Adc STYLE 1 PD 20 W Total Power Dissipation @ TC = 25°C 0.16 W

4.5. mjd41c.pdf Size:230K _lge

MJD41C(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic TO-252-2L Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Monolithic Construction With Built–in Base–Emitter Resistors MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ? Tstg Storage Temperature -65-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specifi

4.6. mjd41c.pdf Size:565K _wietron

MJD41C NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features: * Designed for general purpose amplifier and low speed D-PAK(TO-252) switching applications. * Monolithic Construction With Built–in Base–Emitter Resistors. ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Value Unit VCBO Collector-Base Voltage 100 V VCEO 100 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5.0 V 6.0 A IC Collector Current Collector Power Dissipation PD 1.25 W Tj Junction Temperature +150 ?C Tstg Storage Temperature Range -65 to +150 ?C WEITRON 1/5 19-Nov-09 http://www.weitron.com.tw MJD41C ELECTRICAL CHARACTERISTICS(TA=25?C unless otherwise noted) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO 100 - - V IC=0.1mA Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA Emitter-Base Breakdown Voltage BVEBO 5.0 - - V IE=0.1mA ICEO - - 50 µA VCB=60V IEBO - - 0.5 mA VEB=5.0V ON

See also transistors datasheet: MJD32T4 , MJD340 , MJD340-1 , MJD340T4 , MJD350 , MJD350-1 , MJD350T4 , MJD41C , BC147 , MJD41CT4 , MJD42C , MJD42C-1 , MJD42CT4 , MJD44H11 , MJD44H11-1 , MJD44H11T4 , MJD45H11 .

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