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MJE12007 Transistor (IC) Datasheet. Cross Reference Search. MJE12007 Equivalent

Type Designator: MJE12007

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 65

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 750

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2.5

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 50

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of MJE12007 transistor: TO220

MJE12007 Transistor Equivalent Substitute - Cross-Reference Search

MJE12007 PDF:

1.1. mje12007.pdf Size:118K _inchange_semiconductor

MJE12007
MJE12007

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High voltage Ў¤ Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: Ў¤ Fluorescent lamp ballasts Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Motor controls Ў¤ Deflection circuits PINNING PIN 1 2 3 Base Collector DESCRIP

See also transistors datasheet: MJE1090 , MJE1091 , MJE1092 , MJE1093 , MJE1100 , MJE1101 , MJE1102 , MJE1103 , MD1803DFX , MJE1290 , MJE1291 , MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 .

Search Terms:

 MJE12007 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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