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MJE12007 Transistor. Datasheet pdf. Equivalent

Type Designator: MJE12007

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 750 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO220

MJE12007 Transistor Equivalent Substitute - Cross-Reference Search

MJE12007 Datasheet PDF:

1.1. mje12007.pdf Size:118K _inchange_semiconductor

MJE12007
MJE12007

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High voltage Ў¤ Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: Ў¤ Fluorescent lamp ballasts Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Motor controls Ў¤ Deflection circuits PINNING PIN 1 2 3 Base Collector DESCRIP

Datasheet: MJE1090 , MJE1091 , MJE1092 , MJE1093 , MJE1100 , MJE1101 , MJE1102 , MJE1103 , MD1803DFX , MJE1290 , MJE1291 , MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 .

 


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